• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.148-148
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• 2011

Recently, there have been many research activities to develop the large-area plasma source, which is able to generate the high-density plasma with relatively good uniformity, for the plasma processing in the thin-film solar cell and display panel industries. The large-area CCP sources have been applied to the PECVD process as well as the etching. Especially, the PECVD processes for the depositions of various films such as a-Si:H, ${\mu}c$-Si:H, Si3N4, and SiO2 take a significant portion of processes. In order to achieve higher deposition rate (DR), good uniformity in large-area reactor, and good film quality (low defect density, high film strength, etc.), the application of VHF (>40 MHz) CCP is indispensible. However, the electromagnetic wave effect in the VHF CCP becomes an issue to resolve for the achievement of good uniformity of plasma and film. Here, we propose a new electrode as part of a method to resolve the standing wave effect in the large-area VHF CCP. The electrode is split up a series of strip-type electrodes and the strip-type electrodes and the ground ones are arranged by turns. The standing wave effect in the longitudinal direction of the strip-type electrode is reduced by using the multi-feeding method of VHF power and the uniformity in the transverse direction of the electrodes is achieved by controlling the gas flow and the gap length between the powered electrodes and the substrate. Also, we provide the process results for the growths of the a-Si:H and the ${\mu}c$-Si:H films. The high DR (2.4 nm/s for a-Si:H film and 1.5 nm/s for the ${\mu}c$-Si:H film), the controllable crystallinity (~70%) for the ${\mu}c$-Si:H film, and the relatively good uniformity (1% for a-Si:H film and 7% for the ${\mu}c$-Si:H film) can be obtained at the high frequency of 40 MHz in the large-area discharge (280 mm${\times}$540 mm). Finally, we will discuss the issues in expanding the multi-electrode to the 8G class large-area plasma processing (2.2 m${\times}$2.4 m) and in improving the process efficiency.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.403-409
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• 1998

In this study, the effects of multi-dipole type of magnets on the characteristics of the inductively coupled plasmas and $SiO_2$ etch properties were investigated. As the magnets, 4 pairs of permanent magnets were used and, to etch $SiO_2, C_2F_6, CHF_3, C_4F_8, H_2$, and their combinations were used. The characteristics of the magnetized inductively coupled plasmas were investigated using a Langmuir probe and an optical emission spectrometer, and $SiO_2$ etch rates and the etch selectivity over photoresist were measured using a stylus profilometer. The use of multi-dipole magnets increased the uniformity of the ion density over the substrate location even though no significant increase of ion density was observed with the magnets. The use of the magnets also increased the electron temperature and radical densities while reducing the plasma potential. When $SiO_2$ was etched using the fluorocarbon gases, the significant increase of $SiO_2$ etch rates and also the increase of etch uniformity over the substrate were obtained using the magnets. In case of gas combinations with hydrogen, $C_4F_8/H_2$ showed the highest etch rates and etch selectivities over photoresist among the gas combinations with hydrogen used in the experiment. By optimizing process parameters at 1000 Watts of inductive power with the magnets, the highest $SiO_2$ etch rate of 8000 $\AA$/min could be obtained for 50% $C_4F_8/50% H_2$.

• Analytical Science and Technology
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• v.13 no.4
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• pp.403-411
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• 2000

This study described a method of thermoluminescence dating of pottery shards using subtraction method. TL measurement was achieved using two different types of samples prepared by quartz inclusion method and fine-grain technique. Fine grains (size range: $5-10{\mu}m$) were separated by suspending grounded pottery samples into acetone solution and sedimentation quantitatively. In quartz inclusion method quartz grains in the size range of 90 to $125{\mu}m$ diameter were obtained by extracting the quartz crystals embed in the pottery shards and etching them with 1.0 M HF solutions. The archaeological dose of both the quartz and fine grains was determined from the dose calibration curves obtained from sequential irradiation of $^{137}Cs$ gamma and $^{241}Am$ alpha source to the samples and TL measurement of natural samples, in which the alpha dose of 4.60 Gy for the Packjae pottery was obtained using subtraction method. Annual alpha dose rates ($3.05{\pm}0.11$ mGy/yr.) were determined by the analysis of U, Th contents in the pottery shards and evaluation of the values with Bell's equation. Dividing the alpha dose accumulated in the pottery shards by the annual alpha dose rate, we found age of approximately $1508{\pm}80$ years B.P. (AD. ca. 492 yr.) for the Packjae pottery. It matches well with the archeological age estimate (middle of 5th century) within 10 percent uncertainty and thereby conforms the age of the pottery sample.

• Journal of dental hygiene science
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• v.4 no.1
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• pp.21-25
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• 2004

In modern times, children's trauma is increasing every year because of car accidents and life environment changes. There is a limit to prevent traumatic damage for oral cavity organization. The fundamental data of trauma treatment and prevention will be presented through the survey and analysis of traumatic teeth damage. I examined 113 patients from Oct. 4th, 2000 to Feb. 27th, 2004 at Dept. of Children's Dental Clinic, Kangnung National University. The results are as follows. (1) The trauma frequency of male subjects is higher than that of female at a rate of 2.05:1. The average age is 5.27 for men and 5.27 for women. The highest percentage of trauma patients is among 2 year old children. It is 21.2%. (2) A patient survey was taken at a trauma treatment hospital. On the first day 34.4% of the patients had come to receive treatment of their first set of teeth. However, after a week, 38.8% of the patients had received treatment on their permanent teeth. (3) As a result of falling, 59% of patients needing treatment on their first set of teeth. 55.1% of patients is permanent teeth. As a result of bump against physical solid, 26.6% of patients is the first set of teeth and 26.5% of patients is permanent teeth. (4) Teeth damage happened at home. 42.1% were male. 35.1% were female. According to trauma, 59.4% of teeth damage happened at home. 28.6% of permanent teeth damage happened at school or kindergarten. (5) According to trauma, the number of teeth damaged was in the first set of teeth are as follows: 56.3%, one-31.3%, three or four-6.3% each. For permanent teeth: two-46.9%, one-28.6%, four over-16.3% and three-8.2%. Over four teeth is larger number for permanent teeth. (6) 56% of first set of teeth patients and 43.4% of permanent teeth patients were male. 56.8% of first set of teeth patients and 43.2% of permanent teeth were female. Trauma happened to both male and female frequently in the first set of teeth. (7) Most of the tooth damage which was in the first set of teeth and permanent teeth was done to the upper jaw. 75% of patients are the first set of teeth. 63.8% of patients are permanent teeth. Trauma is very high in the two mid teeth of the upper jaw. (8) According to trauma survey, 30.2% is from impulse. 28.0% is from crown fracture, 14.7% is from depression. 8.9% is from concussion. 7.1% is from full dislocation of a joint. 2.2% of patients are extrusion. 1.8% is from displacement. According to teeth damage trauma, 35.8% is pulse in the first set of teeth. The breaking of the crown of a tooth happened a lot in permanent teeth. (9) According to data, 43.2% of teeth damage in the first set of teeth goes without treatment. In permanent teeth, it is 38.9%. After treatment, 22.0% of first set of teeth treatment requires a dental pulp treatment. In permanent teeth, which is used for temporary acid etching resin restoration.