• 한국전기전자재료학회논문지
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• 제14권4호
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• pp.263-268
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• 2001

This paper describes the effects of applied bias conditions on electrochemical etch-stop characteristics. THere are a number of key issues such as diode leakage and ohmic losses which arise when applying the conventional 3-electrochemical etch-stop to fabricated some of he MEMS(microelectro mechanical system) and SOI(Si-on-insulator) structures which employ SDB(Si-wafer direct bonding). This work allows to perform anin situ diagnostic to predict whether or not an electrochemical etch-stop would fail due to diode-leakage-induced premature passivation. In addition, it presents technology which takes into account the effects of ohmic losses and allows to calculate the appropriate bias necessary to obtain a successful electrochemical etch-stop.

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.28-31
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• 2013

A volcano shaped gated Si-FEA (silicon field emitter array) was simply fabricated using sputtering as a gate electrode deposition and lift-off for the removal of the oxide mask, respectively. Due to the limited step coverage of well-controlled sputtering and the high aspect ratio in Si dry etch caused by high RF power, it was possible to obtain Si FEAs with a stable volcano shaped gate structure and to realize the restriction of gate leakage current in field emission characteristics. For 100 tip arrays and 625 tip arrays, gate leakage currents were restricted to less than 1% of the anode current in spite of the volcano-shaped gate structure. It was also possible to keep the emitters stable without any failure between the Si cathode and gate electrode in field emission for a long time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.7-12
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• 2000

This paper presents the electrochemical etch-stop characteristics of single-crystal silicon in a tetramethyl ammonium hydroxide(TMAH):isopropyl alcohol(IPA):pyrazine solution. Addition of pyrazine to a TMAH:IPA etchant increases the etch-rate of (100) silicon, thus the elapsed time for etch-stop was shortened. The current-voltage (I-V) characteristics of n- and p-type silicon in a TMAH:IPA:pyrazine solution were obtained, respectively. Open circuit potential(OCP) and passivation potential(PP) of n- and p-type silicon, respectively, were obtained and applied potential was selected between n- and p-type silicon PP. The electrochemical etch-stop is applied to the fabrication of 801 microdiaphragms having $20{\mu}m$ thickness on a 5-inch silicon wafer. The averge thicknesses of 801 microdiaphragms fabricated on the one wafer were $20.03{\mu}m$ and standard deviation was ${\pm}0.26{\mu}m$. The silicon surface of the etch-stopped microdiaphragm was extremely flat without noticeable taper or other nonuniformities. The benefits of the electrochemical etch-stop in a TMAH:IPA:pyrazine solution become apparent when reproducibility in the microdiaphragm thickness for mass production is considered. These results indicate that the electrochemical etch-stop in a TMAH:IPA:pyrazine solution provides a powerful and versatile alternative process for fabricating high-yield silicon microdiaphragms.

• 동굴
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• 제82호
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• pp.1-4
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• 2007

In this paper, the etching of Au films using photoresist masks on Si substrates was investigated using a capacitively coupled plasma etch reactor. The advantages of plasma etch techniques over current methods for Au metalization include the ability to simplify the metalization process flow with respect to resist lift-off schemes, and the ability to cleanly remove etched material without sidewall redeposition, as is seen in ion milling. The etch properties were measured for different gas mixing ratios of CF4/Ar, and chamber pressures while the other conditions were fixed. According to statistical design of experiment (DOE), etching process of Au films was characterized and also 20 samples were fabricated followed by measuring etch rate, selectivity and etch profile. There is a chemical reaction between CF4 and Au. Au- F is hard to remove from the surface because of its high melting point. The etching products can be sputtered by Ar ion bombardment.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.90-94
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• 1995

Reactive Ion Etching(RIE) of Si$_{3}$N$_{4}$ in a CF$_{4}$/O$_{2}$ gas plasma exhibits such good anisotropic etching properties that it is widely employed in current VLSI technology. However, the RIE process can cause serious damage to the silicon surface under the Si$_{3}$N$_{4}$ layer. When an atmospheric pressure chemical vapor deposited(APCVD) SiO$_{2}$ layer is used as a etch-stop material for Si$_{3}$N$_{4}$, it seems inevitable to get a good etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$. Therefore, we have undertaken thorough study of the dependence of the etch rate of Si$_{3}$N$_{4}$ plasmas on $O_{2}$ dilution, RF power, and chamber pressure. The etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$ has been obtained its value of 2.13 at the RF power of 150 W and the pressure of 110 mTorr in CF$_{4}$ gas plasma diluted with 25% $O_{2}$ by flow rate.

• Transactions on Electrical and Electronic Materials
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• 제2권2호
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• pp.26-31
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• 2001

This paper presents the electrochemical etch-stop characteristics of single-crystal Si(001) wafers in tetramethyl ammonium hydroxide(TMAH):isopropyl alcohol(IPA):pyrazine solutions. The addition of pyrazine to TMAH:IPA solutions increased the etch rate of (100) Si, thus the etching time required by the etch-stop process shortened. The current-voltage(I-V) characteristics of n- and p-type Si in TMAH:IPA:pyrazine solutions were obtained, respectively. Open circuit potential(OCP) and passivation potential(PP) of n- and p-type Si, respectively, were obtained and applied potential was selected between n- and p-type Si PPs. The electrochemical etch-stop method was used to fabricate 801 microdiaphragms of 20 ${\mu}{\textrm}{m}$ thickness on a 5-inch Si wafer. The average thickness of fabricated 801 microdiaphragms on one Si wafer was 20.03 ${\mu}{\textrm}{m}$ and the standard deviation was $\pm$0.26 ${\mu}{\textrm}{m}$. The Si surface of the etch-stopped microdiaphragm was extremely flat with no noticeable taper or nonuniformity.

• 한국표면공학회지
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• 제29권6호
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• pp.816-823
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• 1996

Chlorine containing high density plasmas are widely used to etch various materials in the microelectronic device fabrication. In this study, the characteristics of inductively coupled $Cl_2(O_2/N_2$) plasmas and their effects on the formation of silicon etching have been investigated using a Langmuir probe, quadrupole mass spectrometry(QMS), X-ray photoelectron spectroscopy(XPS), and Scanning Electron Microscopy(SEM). The addition of oxygen for chlorine plasmas reduced ion current densities and chlorine radical densities compared to the nitrogen addition by the recombination of oxygen with chlorine. Also, when silicon is etched in $Cl_2/O_2$ plasmas, etch products recombined with oxygen such as $SiCl_xO_y$ emerged. However, when nitrogen is added to chlorine, etch products recombined with nitrogen or Si-N bondings on the etched silicon surface were not found. All the silicon etch characteristics were dependent on the plasma conditions such as ion density, radical density, etc. As a result sub micron vertical silicon trench etch profiles could be effectively formed using optimized etch conditions for $Cl_2/O_2\; and \;Cl_2/N_2$ gas combinations.

• Transactions on Electrical and Electronic Materials
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• 제11권4호
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• pp.166-169
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• 2010

In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the $HfAlO_3$ thin film etch rate and the selectivity with $SiO_2$. A maximum etch rate of 108.7 nm/min was obtained in $Cl_2$ (3 sccm)/$BCl_3$ (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of $HfAlO_3$ to $SiO_2$ reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the $HfAlO_3$ thin film increased. As the process pressure increased, the etch rate of the $HfAlO_3$ thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of $HfAlO_3$ thin film follows the ion-assisted chemical etching.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.171-174
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• 2002

The barium strontium titannate (BST) thin films were etched in $CF_{4}/Ar$ inductively coupled plasma (ICP). The high etch rate obtained at a $CF_{4}(20%)/Ar(80%)$ and the etch rate in pure argon was twice higher than that in pure $CF_{4}$. This indicated that BST etching is sputter dominant process. It is impossible to avoid plasma-induced damages by the energetic particles in the plasma and the nonvolatile etch products. The plasma damages were evaluated in terms of leakage current density, residues on the etched sample, and the changes of roughness. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. In addition, there are appeared a nonvolatile etch byproductsand from the result of X-ray photoelectron spectroscopy (XPS). After annealing at ${600^{\circ}C}$ for 10 min in $O_{2}$ ambient, the increased leakage current density, roughness and nonvolatile etch byproducts reduced. From the this results, the plasma induced damage recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

• 통합자연과학논문집
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• 제3권4호
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• pp.210-214
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• 2010

Relationship between etch current and morphology and porosity of porous silicon (PS) has been investigated. The gravimetric method is applied to measured the porosity of PS. As the current density increase, the silicon dissolution rate increases, resulting in a higher porosity and etching rate. The result shows that linear dependence of PS porosity and etching rate as a function of current density. The morphology of porous silicon was investigated by using cold field emission scanning electron micrograph (FE-SEM). The size of pores formed during anodization is predominantly controlled by the current density, with an increase in the pore size corresponding to an increase in the current density.