• KIPS Transactions on Computer and Communication Systems
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• v.5 no.1
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• pp.1-6
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• 2016

This paper focuses on algorithm innovation of NAND Flash Memory for enhancing cell lifetime. During flash memory read/write/erase, the voltage of a specific cell should be a valid voltage level. If not, we cannot read the data correctly. This type of interference/disturbance tends to be serious when program and erase operation will go on. This is because FN tunneling results in tunnel oxide damage due to increased trap site on repetitive high biased state. In order to resolve this problem, we make the cell degradation by reducing the amount of stress in terms of erase cell, resulting in minimizing the cell disturbance on erase verify.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1874-1877
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• 2002

The ramp waveform has recently been introduced to erase wall charges for AC PDP. However, it is difficult to erase completely the wall charges in all cases In this paper, new erase waveform having adaptive erasing characteristics are investigated. The erase margin of suggested waveform is wider than that of the conventional waveform. Moreover, suggested waveform can reduce the erase time significantly.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.585-588
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• 2007

We studied the effect of self-erase discharge on the luminous efficacy of ac PDPs. We observed through discharge current analysis to confirm that the selferase discharge occurred mainly between sustain cathode and address electrode, which have an influence on the luminous efficacy. The amount and timing of the self-erase discharge was varied to observe its effect on the luminous efficacy. It has been found that the luminous efficacy could be improved by the self-erase discharge when it is adjusted to occur right before the main discharge in the small gap structure. In the long gap structure, on the contrary, the luminous efficacy could be increased when the self-erase discharge is suppressed. Also, various waveforms to control self-erase discharge are suggested and tested in the panel experiments.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.40-43
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• 2000

The electrons and holes trapped in the tunneling oxide and interface-states generated in the Si/SiO$_2$ interface during program/erase (P/E) operations are known to cause reliability problems which can deteriorate the cell performance and cause the V$_{th}$ window close. This deterioration is caused by the accumulation of electrons and holes trapped in the oxide near the drain and source side after each P/E cycle. we propose three new erase schemes to improve the cell's endurance characteristics: (1)adding a Reverse soft program cycle after the source erase operation, (2)adding a detrapping cycle after the source erase operation, (3)adding a convergence cycle after the source erase operation. (3) is the most effective performance among the three erase schemes have been implemented and shown to significantly reduce the V$_{th}$ window close problem. And we are able to design the reliable periperal circuit of flash memory by using the (3).(3).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.11
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• pp.541-545
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• 2002

This paper proposes the new narrow erase method to erase wall charges formed in an AC plasma display panel (PDP) cell. In the proposed method, pulse timing of switch at the sustain period is adjusted for inducing, a weak discharge. Then, after the narrow erase, the voltage of the X electrode is set to differ from that of the Y electrode. For the proposed method, the measured maximum address voltage margin was 38.3V at Y_Rest voltage of 100V and sustain voltage of 180${\sim}$185V. However, for the conventional method, in which the X and Y electrodes are set to be of equal voltage after the narrow erase, the measured maximum address voltage margin was 31.3V at Y_Rest voltage of 150V and sustain voltage of 180V. This result shows that the measured maximum voltage margin for the proposed method is about 7V(22%) higher than that for the conventional method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.54-57
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• 2002

In this study, a new programming method, to minimize the generation of Si-SiO$_2$ interface traps of scaled SONOS flash memory as a function of number of program/erase cycles has been proposed. In the proposed programming method, power supply voltage is applied to the gate, forward biased program voltage is applied to the source and the drain, while the substrate is left open, so that the program is achieved by Modified Fowler-Nordheim (MFN) tunneling of electron through the tunnel oxide over source and drain region. For the channel erase, erase voltage is applied to the gate, power supply voltage is applied to the substrate, and the source and drain are open. A single power supply operation of 3 V and a high endurance of 1${\times}$10$\^$6/ prograss/erase cycles can be realized by the proposed programming method. The asymmetric mode in which the program voltage is higher than the erase voltage, is more efficient than symmetric mode in order to minimize the degradation characteristics of scaled SONOS devices because electrical stress applied to the Si-SiO$_2$ interface is reduced by short programming time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.300-304
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• 2008

A novel characterization method was investigated to estimate the trap generation during the program /erase cycles in nand flash memory cell. Utilizing Fowler-Nordheim tunneling current, floating gate potential and oxide electric field, we established a quantitative model which allows the knowledge of threshold voltage (Vth) as a function of either program or erase operation time. Based on our model, the derived results proved that interface trap density (Nit) term is only included in the program operation equation, while both Nit and oxide trap density (Not) term are included in the erase operation equation. The effectiveness of our model was tested using 50 nm nand flash memory cell with floating gate type. Nit and Not were extracted through the analysis of Program/Erase speed with respect to the endurance cycle. Trap generation and cycle numbers showed the power dependency. Finally, with the measurement of the experiment concerning the variation of cell Vth with respect to program/erase cycles, we obtained the novel quantitative model which shows similar results of relationship between experimental values and extracted ones.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.46 no.4
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• pp.21-30
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• 2009

Fusion flash memory such as OneNAND$^{TM}$ is popular as a ubiquitous storage device for embedded systems because it has advantages of NAND and NOR flash memory that it can support large capacity, fast read/write performance and XIP(eXecute-In-Place). Besides, OneNAND$^{TM}$ provides not only advantages of hybrid structure but also multi-block erase function that improves slow erase performance by erasing the multiple blocks simultaneously. But traditional NAND Flash Translation Layer may not fully support it because the garbage collection of traditional FTL only considers a few block as victim block and erases them. In this paper, we propose an Erase Group Flash Translation Layer for improving multi-block erase function. EGFTL uses a superblock scheme for enhancing garbage collection performance and invalid block management to erase multiple blocks simultaneously. Also, it uses clustered hash table to improve the address translation performance of the superblock scheme. The experimental results show that the garbage collection performance of EGFTL is 30% higher than those of traditional FTLs, and the address translation performance of EGFTL is 5% higher than that of Superblock scheme.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.12B
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• pp.1418-1425
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• 2009

This paper proposes a novel FTL (Flash Translation Layer) algorithm based on sector-level mapping to reduce the number of total erase operations in flash memory accesses. The proposed algorithm can reduce the number of erase operations by utilizing the sector-level mapping table when writing data at flash memory. Sector-level mapping technique reduces flash memory access time and extendsthe life time of the flash memory. In the algorithm, wear-leveling is implemented by selecting victim blocks having the minimal number of erase operations, when empty spaces for write are not available. To evaluate the performance of the proposed FTL algorithm, experiments were performed on several applications, such as MP3 players, MPEG players, web browsers and document editors. The proposed algorithm reduces the number of erase operations by 72.4% and 61.9%, when compared with well-known BAST and FAST algorithms, respectively.

• IEMEK Journal of Embedded Systems and Applications
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• v.12 no.3
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• pp.121-130
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• 2017

NAND flash memory has advantages of non-volatility, little power consumption and fast access time. However, it suffers from inability that does not provide to update-in-place and the erase cycle is limited. Moreover, the unit of read/write operation is a page and the unit of erase operation is a block. Therefore, erase operation is slower than other operations. The AGC, the proposed garbage collection policy focuses on not only garbage collection time reduction for real-time guarantee but also wear-leveling for a flash memory lifetime. In order to achieve above goals, we define three garbage collection operating modes: Fast Mode, Smart Mode, and Wear-leveling Mode. The proposed policy decides the garbage collection mode depending on system CPU usage rate. Fast Mode selects the dirtiest block as victim block to minimize the erase operation time. However, Smart Mode selects the victim block by reflecting the invalid page number and block erase count to minimizing the erase operation time and deviation of block erase count. Wear-leveling Mode operates similar to Smart Mode and it makes groups and relocates the pages which has the similar update time. We implemented the proposed policy and measured the performance compare with the existing policies. Simulation results show that the proposed policy performs better than Cost-benefit policy with the 55% reduction in the operation time. Also, it performs better than Greedy policy with the 87% reduction in the deviation of erase count. Most of all, the proposed policy works adaptively according to the CPU usage rate, and guarantees the real-time performance of the system.