• Title/Summary/Keyword: Equivalent Impedance

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Analysis of aperture coupled stacked microstrip array antenna (슬롯결합 적층 마이크로스트립 배열 안테나 해석)

  • 장병준;이용국;문호원;윤영중;박한규
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.21 no.3
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    • pp.753-762
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    • 1996
  • In this paper, aperture coupled stacked microstrip array antennas are proposed and their operating characteristics are analyzed based on analytical. In order to evaluate mutual coupling between slot-coupled microstrip patches in finite array, analysis uses the reciprocity theorem and the spectral domain Green's functions for dielectric slab in a moment method solution for the unknown patches and solts current distrbution. By introducing an N-port equivalent network, the impedance matrix of an affay of N-element slot-coupled patches is evaluated directly from its network current matix of order N$^{2}$, and it can be programmed to be run on a PC. Numerical results show mutual coupling, radiation pattern, active reflection coefficient versus scan angle, radiation efficiency and active element gain pattern.

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A Study on Analysis and Design of HVC Embedded High Frequency Transformer for Microwave Oven (Inverter 구동 Microwave Oven용 HVC 내장형 고주파변압기의 해석 및 설계에 관한 연구)

  • Park, K.H.;Cho, J.S.;Mok, H.S.;Choe, G.H.
    • Proceedings of the KIEE Conference
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    • 2001.04a
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    • pp.293-296
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    • 2001
  • A conventional power supply to drive a microwave oven has ferro-resonant transformer and high voltage capacitor(HVC). Though it is simple, transformer is bulky, heavy and has low-efficiency. To improve this defect, a high frequency inverter type power supply has been investigated and developed in recent years. But, because of additional control circuit and switching device, inverter-type power supply is more expensive than conventional one. In this study, The design procedure of a novel HVC embedded high frequency transformer is proposed for down-sizing and cost reduction of Inverter-type power supply. Also, equivalent circuit mode] is derived by FEM analysis and impedance measurements. And the operation of proposed HVC embedded transformer is verified by simulations and experimental results.

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Performance Test of 200-MW Pulse Transformer for 80-MW Klystron Load (80-MW 클라이스트론 부하용 200-MW 펄스 트랜스포머의 성능시험)

  • Jang, S.D.;Oh, J.S.;Son, Y.G.;Cho, M.H.
    • Proceedings of the KIEE Conference
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    • 1999.07e
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    • pp.2167-2169
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    • 1999
  • A pulse transformer producing pulses with the peak power of 200-MW (400 kV 500 A at load side with $4.4{\mu}s$ flat-top) is required to drive the 80-MW pulsed klystron in the PLS linac. We have designed and manufactured the high power pulse transformer with 1 : 17 turn ratio. Its primary functions are to match the impedance of klystron tube to the modulators, and to provide step-up of the voltage. To obtain a fast rise time of the pulse voltage. Low leakage inductance and low distributed capacitance design is very important. In this paper, we discuss the equivalent circuit analysis of the pulse transformer, and present the full power performance test results of pulse transformer.

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Series-parallel resonant converter using a contactless power supply for the efficiency improvement (효율 개선을 위한 직${\cdot}$병렬 공진컨버터 적용 비접촉 전원)

  • Kong Y.S.;Lee H.K.;Kim E.S.;Cho J.G.;Kim J.M.
    • Proceedings of the KIPE Conference
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    • 2004.11a
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    • pp.45-48
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    • 2004
  • To improve the efficiency characteristics in the resonant converter using the contact-less power supply with the large air-gap and the long primary winding, this paper suggests the three-level series-parallel resonant converter(SPRC). The voltage gain characteristics of the proposed converter have the unit gain in a resonance frequency point of the series and parallel, and input voltage and current in the primary of SPRC are always In phase for the all equivalent load resistance because of the parallel resonant tank of the high impedance. The results are verified on the simulation based on the theoretical analysis and the 4kW experimental prototype.

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Electrochemical Characteristics of Activated Carbon Electrode for Supercapacitor (Supercapacitor용 활성탄 전극의 전기 화학적 특성)

  • 김경민;이용욱;강안수
    • Proceedings of the Safety Management and Science Conference
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    • 2002.11a
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    • pp.273-277
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    • 2002
  • In the electrode fabrication of unit cell, we found that optimal the electrochemical characteristics were obtained with at 90 wt.% of activated carbon(BP-20), 5 wt.% of conducting agent(Ppy, Super P) and 5 wt.% of P(VdF-co-HFP)/PVP mixed binder. The electrochemical characteristics of unit cell with Ppy improver were as follows : 37.6 F/g of specific capacitance, 0.98 $\Omega$ of AC-ESR, 2.92 Wh/kg and 6.05 Wh/L of energy density, and 754 W/kg and 1,562 W/L of power density. It was confirmed that internal resistance were reduced due to the increase of electrical conductivity and filling density by the introduction of conductivity agent, and content of conducting agent was suitable in the range of 4~6 wt.%. According to the impedance measurement of the electrode with conductivity agent, we found that it was possible to charge rapidly by the fast steady-state current convergence due to low equivalent series resistance(AC-ESR), fast charge transfer rate at interface between electrode and electrolyte, and low RC time constant.

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Effect of Microstructure on Corrosion Behavior of TiN Hard Coatings Produced by Two Grid-Attached Magnetron Sputtering

  • Kim, Jung Gu;Hwang, Woon Suk
    • Corrosion Science and Technology
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    • v.5 no.1
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    • pp.15-22
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    • 2006
  • The introduction of two-grid inside a conventional process system produces a reactive coating deposition and increases metal ion ratio in the plasma, resulting in denser and smoother films. The corrosion behaviors of TiN coatings were investigated by electrochemical methods, such as potentiodynamic polarization test and electrochemical impedance spectroscopy (EIS) in deaerated 3.5% NaCl solution. Electrochemical tests were used to evaluate the effect of microstructure on the corrosion behavior of TiN coatings exposed to a corrosive environment. The crystal structure of the coatings was examined by X-ray diffractometry (XRD) and the microstructure of the coatings was investigated by scanning electron microscopy (SEM) and transmission electron spectroscopy (TEM). In the potentiodynamic polarization test and EIS measurement, the corrosion current density of TiN deposited by two grid-attached magnetron sputtering was lower than TiN deposited by conventional magnetron type and also presented higher Rct values during 240 h immersion time. It is attributed to the formation of a dense microstructure, which promotes the compactness of coatings and yields lower porosity.

A 90°-Bent Spur-Line Combined CRLH ZOR Bandpass Filter for the Channel of the UWB Communication System

  • Lee, Changhyeong;Kahng, Sungtek
    • Journal of Electrical Engineering and Technology
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    • v.13 no.2
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    • pp.928-935
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    • 2018
  • In this paper, a compact fully printable bandpass filter is suggested for a low-frequency channel 3.2 GHz ~ 3.7 GHz in the Ultra-Wideband (UWB) communication system. It is featured with a small geometry of $0.5{\lambda}_g/15$ and a low insertion loss despite using FR4 as a cheap substrate of a high dielectric loss. This is made possible by generating zeroth-order-resonance (ZOR) from one cell comprising two series resonances obviously separated from one shunt resonance as a third-order bandpass filter. Especially, the series resonance elements are combined with spur-lines bent by 90 degrees, which makes the port-impedance matched well and eliminates spurious hikes in the stopband, while the overall size remains almost unchanged. The design is carried out by setting up the equivalent circuit and the circuit simulation is checked by the full-wave EM analysis. The structure is manufactured and measured to show that the circuit modeling and EM simulation results agree with the measured data.

Accurate Formulas for Frequency-Dependent Resistance and Inductance Per Unit Length of On-Chip Interconnects on Lossy Silicon Substrate

  • Ymeri, H.;Nauwelaers, B.;Maex, K.;Roest, D.De;Vandenberghe, S.;Stucchi, M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.1
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    • pp.1-6
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    • 2002
  • A new closed-form expressions to calculate frequency-dependent distributed inductance and the associated distributed series resistance of single interconnect on a lossy silicon substrate (CMOS technology) are presented. The proposed analytic model for series impedance is based on a self-consistent field method and the vector magnetic potential equation. It is shown that the calculated frequency-dependent distributed inductance and the associated resistance are in good agreement with the results obtained from rigorous full wave solutions and CAD-oriented equivalent-circuit modeling approach.

Analysis of Magnetically Coupled Wireless Power Transmission for Maximum Efficiency

  • Kim, Chung-Ju;Lee, Bom-Son
    • Journal of electromagnetic engineering and science
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    • v.11 no.3
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    • pp.156-160
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    • 2011
  • We have proposed and analyzed an equivalent circuit for a magnetically coupled wireless power transmission (WPT) system between two loop resonators by considering its coupling coefficient and radiation-related parameters. A complete formulation is provided for all the necessary circuit parameters. The mechanism of radiation loss is sufficiently explained. The circuit and electromagnetic (EM) simulation results have been shown to be in good agreement. Based on the proposed circuit formulation, a specific load impedance for maximum WPT efficiency was found to exist. The proposed modeling of the WPT in terms of circuit characterizations provides sufficient insight into the problems associated with WPT.

A Novel Design of Voltage Controlled Dielectric Resonator Oscillator using 3-terminal MESFET Varactor (3-terminal MESFET 바랙터를 이용한 새로운 전압 제어 유전체 공진 발진기의 설계)

  • 이주열;이찬주;홍의석
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.12
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    • pp.28-35
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    • 1993
  • The MESFET can be used as a three-terminal varactor by employing gate depletion capacitance Cg. In this paper, a novel VCDRO(voltage controlled dielecric resonator oscillator) is designed to apply VCDRO with this concept. The VCDRO produced 6.33dBm output power at a frequency of 11.058GHz and tunning bandwidth of 45MHz. The advantage of using the MESFET as a three-terminal varactor is to let the MESFET play both roles at the same time, thus simplifying the circuit configuration and fabrication. This finding demonstrates the potential of using both real and imaginary parts of the equivalent impedance of the active device.

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