Erasing Characteristics Improvement in $HfO_2$ Charge Trap Flash (CTF) through Tunnel Barrier Engineering (TBE)
(Tunnel Barrier Engineering (TBE)를 통한 $HfO_2$ Charge Trap Flash (CTF) Memory의 Erasing 특성 향상)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2008.11a
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- pp.7-8
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- 2008