JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Characterization of Density-of-States in Polymer-based Organic Thin Film Transistors and Implementation into TCAD Simulator

  • Kim, Jaehyeong (School of Electrical Engineering, Kookmin University) ;
  • Jang, Jaeman (School of Electrical Engineering, Kookmin University) ;
  • Bae, Minkyung (School of Electrical Engineering, Kookmin University) ;
  • Lee, Jaewook (School of Electrical Engineering, Kookmin University) ;
  • Kim, Woojoon (School of Electrical Engineering, Kookmin University) ;
  • Hur, Inseok (School of Electrical Engineering, Kookmin University) ;
  • Jeong, Hyun Kwang (School of Electrical Engineering, Kookmin University) ;
  • Kim, Dong Myong (School of Electrical Engineering, Kookmin University) ;
  • Kim, Dae Hwan (School of Electrical Engineering, Kookmin University)
  • Received : 2012.04.30
  • Published : 2013.02.28
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Abstract

In this work, we report extraction of the density-of-states (DOS) in polymer-based organic thin film transistors through the multi-frequency C-V spectroscopy. Extracted DOS is implemented into a TCAD simulator and obtained a consistent output curves with non-linear characteristics considering the contact resistance effect. We employed a Schottky contact model for the source and drain to fully reproduce a strong nonlinearity with proper physical mechanisms in the output characteristics even under a very small drain biases. For experimental verification of the model and extracted DOS, 2 different OTFTs (P3HT and PQT-12) are employed. By controlling the Schottky contact model parameters in the TCAD simulator, we accurately reproduced the nonlinearity in the output characteristics of OTFT.

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References

  1. J. Jang, et al., "Extraction of the sub-bandgap density-of-states in polymer thin-film transistors with the multi-frequency capacitance-voltage spectroscopy," Appl. Phys. Lett. Vol.100, No.13 (2012), p.133506-133506-5 https://doi.org/10.1063/1.3698455
  2. G. B. Blanchet, et al., "Contact resistance in organic thin film transistors," Appl. Phys. Lett. Vol. 84, No.2 (2004), p.296-298 https://doi.org/10.1063/1.1639937
  3. C. R. Crowell, et al., "CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS," Solid-State Electronics, Vol.9, (1966), p.1035-1048. https://doi.org/10.1016/0038-1101(66)90127-4
  4. ATLAS Device simulation software User's Manual, SILVACO International.

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  1. Physical Origins and Analysis of Negative-Bias Stress Instability Mechanism in Polymer-Based Thin-Film Transistors vol.35, pp.3, 2014, https://doi.org/10.1109/LED.2014.2298861