• Journal of Advanced Navigation Technology
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• v.21 no.1
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• pp.99-106
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• 2017

In this paper, an energy harvesting and profiling system is designed for smart video devices in internet of things environments without dedicated power source. The energy harvesting module provides the harvested energy from solar panel to the smart video device. The energy profiling module measures the battery outflow current and the battery voltage of the smart video device and the consumed energy of processes, and calculate the harvested energy from the energy harvesting module to the smart video device and the total energy consumption of the smart video device. The accuracy of the harvested energy measured by the device energy profiling module is validated by comparing with the calculated energy using the regional solar radiation provided by Korea Meteorological Administration. Energy harvesting data from the designed energy harvesting and profiling system can be used to design the perpetual operation of smart video devices or Internet of Things sensors.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.274-274
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• 2012

In-depth analysis by secondary ion mass spectrometry (SIMS) is very important for the development of electronic devices using multilayered structures, because the quantity and depth distribution of some elements are critical for the electronic properties. Correct determination of the interface locations is critical for the calibration of the depth scale in SIMS depth profiling analysis of multilayer films. However, the interface locations are distorted from real ones by the several effects due to sputtering with energetic ions. In this study, the determination of interface locations in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multilayer systems. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors (RSF) derived from the atomic compositions of Si-Ge and Si-Ti alloy reference films determined by Rutherford backscattering spectroscopy. The thicknesses of the Si/Ge and Ti/Si multilayer films measured by SIMS depth profiling with various impact energy ion beam were compared with those measured by TEM. There are two methods to determine the interface locations. The one is the feasibility of 50 atomic % definition in SIMS composition depth profiling. And another one is using a distribution of SiGe and SiTi dimer ions. This study showed that the layer thicknesses measured with low energy oxygen and Cs ion beam and, by extension, with method of 50 atomic % definition were well correlated with the real thicknesses determined by TEM.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.89-89
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• 1995

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.17-17
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• 2000

The issue of reflow profiling continues to be a complex topic. The pains often associated with profiling can be reduced greatly if certain guidelines are followed and if there is a strong understanding of the variables that can be encountered during the reflow process. This paper shall discuss the appropriate guidelines and trouble shooting methods for reflow profiling, and in particular shall focus upon the benefits of implementing the linear ramp-to-spike profile. Delta T(T) is defined as the variation of temperature found on an assembly during the reflow process. Too large of a T can result in soldering defects, so to combat T a Ramp-Soak-Spike(RSS) reflow profile often is utilized. However, when using a newer-style reflow oven, the T often is minimized or eliminated, thus, the soak zone of the reflow profile becomes an unnecessary step. Because of this, the implementation of a linear Ramp-To-Spike(RTS) reflow profile should be considered. Benefits such as reduced energy costs, reduced solder defects, increased efficiency, improved wetting, and a simplification of the reflow profile process may be experienced when using the RTS profile. Included in this paper are the suggested process parameters for setting up the RSS and RTS profiles and the chemical and metallurgical reactions that occur at each set point of these profiles. The paper concludes with a discussion and pictures of several profile-related defects. Each of these defects is described, analyzed, and instructions are given for troublshooting these defects.

• Proceedings of the Korean Society for Applied Microbiology Conference
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• 2001.06a
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• pp.125-128
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• 2001

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.749-752
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• 2012

Recent social issues is energy issues, green computing has attracted attention. Active research on the power consumption of computer profiling is one of the various approaches for green computing. As a representative tool PowerAPI, PowerTop, JouleMeter, pTop, and EnergyChecker. These studies can be used to measure the power consumption of each computer device because it is based on a pure software. Based on this profiling process at the level of power consumption by performing the power consumption of each program can be analyzed. Therefore to identify the processes that consume a lot of power and control the total power consumption by reducing, also when designing the program, based on data profiling power enables the design of low-power programs, and ultimately can be oriented green computing. In this paper, by comparing and analyzing the associated representative studies, the ideal process level will draw on the characteristics of the power consumption profiler.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.97.2-97.2
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• 2010

유리기판을 이용하여 제조되는 미세 결정질 실리콘 박막 태양전지에서 진성 반도체층(i ${\mu}c$-Si:H layer, i층)은 태양전지의 광 흡수층으로 사용되기 때문에 그 특성은 매우 중요하다. 특히, i층의 결정분율 변화는 태양광의 흡수파장 및 효율을 결정하여 준다. 본 연구에서는 i층 증착시 $SiH_4$ 가스의 농도 변화 및 $SiH_4$ 가스 profiling을 통하여 i층의 결정분율을 변화하였으며, 이에 따른 i층 단위박막과 미세결정질 태양전지 특성변화를 분석 하였다. i층의 $SiH_4$ 가스 농도가 증가함에 따라 i층 단위박막의 결정분율은 증가하였으며, 전기 전도도는 감소하였다. 또한, i층의 $SiH_4$ 가스 농도를 점차 증가하며 profiling 하여 증착한 박막은 동일 가스 농도로 증착한 박막보다 전기 전도도가 감소하였고, 증착속도는 증가하였다. 이와 같은 다양한 i층들은 'Raman spectroscopy'를 통하여 결정분율 변화를 측정하였다. 또한, 이 박막들을 광 흡수층으로 사용하는 미세결정질 태양전지를 제조하고, 태양전지의 효율, 양자효율, 암전류 특성들을 단위박막 특성과 연계하여 분석하였다.

• Journal of the Korean Magnetic Resonance Society
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• v.15 no.1
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• pp.54-68
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• 2011

$^1H$ nuclear magnetic resonance (NMR) spectroscopy of biological samples has been proven to be an effective and nondestructive approach to probe drug toxicity within an organism. In this study, ketoprofen toxicity was investigated using $^1H$-NMR spectroscopy coupled with multivariate statistical analysis. Histopathologic test of ketoprofen-induced acute gastrointestinal damage in rats demonstrated a significant dose-dependent effect. Furthermore, principal component analysis (PCA) derived from $^1H$-NMR spectra of urinary samples showed clear separation between the vehicle-treated control and ketoprofen-treated groups. Moreover, PCA derived from endogenous metabolite concentrations through targeted profiling revealed a dose-dependent metabolic shift between the vehicle-treated control, low-dose ketoprofen-treated (10 mg/kg body weight), and high-dose ketoprofen-treated (50 mg/kg) groups coinciding with their gastric damage scores after ketoprofen administration. The resultant metabolic profiles demonstrated that the ketoprofen-induced gastric damage exhibited energy metabolism perturbations that increased urinary levels of citrate, cis-aconitate, succinate, and phosphocreatine. In addition, ketoprofen administration induced an enhancement of xenobiotic activity in fatty oxidation, which caused increase levels of N-isovalerylglycine, adipate, phenylacetylglycine, dimethylamine, betaine, hippurate, 3-indoxylsulfate, N,N-dimethylglycine, trimethyl-N-oxide, and glycine. These findings demonstrate that $^1H$-NMR-based urinary metabolic profiling can be used for noninvasive and rapid way to diagnose adverse drug effects and is suitable for explaining the possible biological pathways perturbed by nonsteroidal anti-inflammatory drug toxicity.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.320-320
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• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.1
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• pp.19-23
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• 2003

Polished surface of $CsB_{3}O_{5}$ (CBO) has been observed by reflection high energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). For comparison, electronic properties of CBO powder have been studied by XPS. It has been found that the crystal surface is covered by thick amorphous layer with chemical composition closely related to that of CBO. Great enrichment of top surface by cesium, ~30 % in reference to the bulk of the modified layer, has been displayed by depth profiling.