• Title/Summary/Keyword: Energy trapping effect

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Dispersion Behaviors of Y2O3 Particles Into Aisi 316L Stainless Steel by Using Laser Cladding Technology (레이저 클래딩법을 이용한 AISI 316L 스테인리스강 내 Y2O3입자의 분산거동)

  • Park, Eun-Kwang;Hong, Sung-Mo;Park, Jin-Ju;Lee, Min-Ku;Rhee, Chang-Kyu;Seol, Kyeong-Won;Lee, Yang-Kyu
    • Journal of Powder Materials
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    • v.20 no.4
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    • pp.269-274
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    • 2013
  • The present work investigated the dispersion behavior of $Y_2O_3$ particles into AISI 316L SS manufactured using laser cladding technology. The starting particles were produced by high energy ball milling in 10 min for prealloying, which has a trapping effect and homogeneous dispersion of $Y_2O_3$ particles, followed by laser cladding using $CO_2$ laser source. The phase and crystal structures of the cladded alloys were examined by XRD, and the cross section was characterized using SEM. The detailed microstructure was also studied through FE-TEM. The results clearly indicated that as the amount of $Y_2O_3$ increased, micro-sized defects consisted of coarse $Y_2O_3$ were increased. It was also revealed that homogeneously distributed spherical precipitates were amorphous silicon oxides containing yttrium. This study represents much to a new technology for the manufacture and maintenance of ODS alloys.

Fabrication of Ordered One-Dimensional Silicon Structures and Radial p-n Junction Solar Cell

  • Kim, Jae-Hyun;Baek, Seong-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.86-86
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    • 2012
  • The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.

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Modified Graphene Oxide-Based Adsorbents Toward Hybrid Membranes for Organic Dye Removal Application

  • Thi Sinh, Vo;Khin Moe, Lwin;Sun, Choi;Kyunghoon, Kim
    • Composites Research
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    • v.35 no.6
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    • pp.402-411
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    • 2022
  • In this study, the channels-contained hybrid membranes have been fabricated through the incorporation of glass fibers and GO sheets (GO/glass fibers, GG), or a mixture of chitosan/GO (CS/GO/glass fibers, CGG), as hybrid membranes using in organic dye removal. The material properties are well investigated the terms in the morphological, chemical, crystal, and thermal characterizations for verifying interactions in their formed structure. These hybrid membranes have been fitted well in pseudo-second order and Langmuir models that are associated with chemical adsorption and a monolayer approach, respectively. The highest adsorption ability of methylene blue and methyl orange reached 59.40 mg/g and 229.07 mg/g (GG); and 287.47 mg/g and 252.91 mg/g (CGG), which is more enhanced than that of previous GO-based other adsorbents. Moreover, the dye separation on these membranes could be favorable to superb sealing and trapping dye molecules from water instead of only the dye connection occurring on their surface, regarding the physically sieving effect. The membranes can also be reused within two and three adsorbing-desorbing cycles on the GG and CGG ones, respectively. These membranes can become future adsorbents to be applied for wastewater treatment due to their structural features.

Promoting Effect of MgO in the Photodegradation of Methylene Blue Over MgO/MWCNT/TiO2 Photocatalyst

  • Chen, Ming-Liang;Zhang, Feng-Jun;Oh, Won-Chun
    • Korean Journal of Materials Research
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    • v.20 no.7
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    • pp.345-350
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    • 2010
  • For the present paper, we prepared MgO/MWCNT/$TiO_2$ photocatalyst by using multi-walled carbon nanotubes (MWCNTs) pre-oxidized by m-chlorperbenzoic acid (MCPBA) with magnesium acetate tetrahydrate $(Mg(CH_2COO)_2\cdot4H_2O)$ and titanium n-butoxide $(Ti\{OC(CH_3)_3\}_4)$ as magnesium and titanium precursors. The prepared photocatalyst was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analysis. The decomposition of methylene blue (MB) solution was determined under irradiation of ultraviolet (UV) light. The XRD results show that the MgO/MWCNT/$TiO_2$ photocatalyst have cubic MgO structure and anatase $TiO_2$ structure. The porous structure and the $TiO_2$ agglomerate coated on the MgO/MWCNT composite can be observed in SEM images. The Mg, O, Ti and C elements can be also observed in MgO/MWCNT/$TiO_2$ photocatalyst from EDX results. The results of photodegradation of MB solution under UV light show that the concentration of MB solution decreased with an increase of UV irradiation time for all of the samples. Also, the MgO/MWCNT/$TiO_2$ photocatalyst has the best photocatalytic activity among these samples. It can be considered that the MgO/MWCNT/$TiO_2$ photocatalyst had a combined effect, the effect of MWCNT, which could absorb UV light to create photoinduced electrons $(e^-)$, and the electron trapping effect of MgO, which resulted in an increase of the photocatalytic activity of $TiO_2$.

Effects of Low Dose γ-Radiation on Photosynthesis of Red Pepper (Capsicum annuum L.) and the Reduction of Photoinhibition (저선량 γ선 조사가 고추의 광합성과 광 스트레스 경감에 미치는 효과)

  • Lee, Hae-Youn;Baek, Myung-Hwa;Park, Soon-Chul;Park, Youn-Il;Kim, Jae-Sung
    • Korean Journal of Environmental Agriculture
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    • v.21 no.2
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    • pp.83-89
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    • 2002
  • The effect of low dose $\gamma$ radiation on photosynthesis and the reduction of photoinhibition in red pepper plant was investigated. The seedling height leaf width and leaf length of pepper were stimulated in plants grown from seeds irradiated with the low dose of 4 Gy. The $O_2$ evolution in the 4 Gy irradiation group was 1.5 times greater than in the control. To investigate the effect of low dose $\gamma$ radiation on response to high light stress, photoinhibition was induced in leaves of pepper by illumination of high light (900 $\mu mol/m^2/s$). Pmax was decreased with increasing illumination time by 20% in the control, while hardly decreased in the 4 Gy irradiation group. The photochemical yield of PSII, estimated as Fv/Fm, was decreased with increasing illumination time by 50% after 4 hours while Fo did not change. However, Fv/Fm in the 4 Gy irradiation group was decreased by 37% of inhibition, indicating that the photoinhibition was decreased by the low dose $\gamma$ radiation. Changes in the effective quantum yield of PSII, $\Phi_{PSII}$, and 1/Fo-1/Fm, a measure of the rate constant of excitation trapping by the PSII reaction center, showed similar pattern to Fv/Fm. And NPQ was decreased after photoinhibitory treatment showing no difference between the control and the 4 Gy irradiation group. These results showed the positive effect of low dose $\gamma$ radiation on the seedling growth and the reduction of photoinhibition.

Light Scattering Properties of Highly Textured Ag/Al:Si Bilayer Back Reflectors (표면텍스처링된 이중구조 Ag/Al:Si 후면반사막의 광산란 특성)

  • Jang, Eun-Seok;Baek, Sang-Hun;Jang, Byung-Yeol;Park, Sang-Hyun;Yoon, Kyung-Hoon;Rhee, Young-Woo;Cho, Jun-Sik
    • Korean Journal of Materials Research
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    • v.21 no.10
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    • pp.573-579
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    • 2011
  • Highly textured Ag, Al and Al:Si back reflectors for flexible n-i-p silicon thin-film solar cells were prepared on 100-${\mu}m$-thick stainless steel substrates by DC magnetron sputtering and the influence of their surface textures on the light-scattering properties were investigated. The surface texture of the metal back reflectors was influenced by the increased grain size and by the bimodal distribution that arose due to the abnormal grain growth at elevated deposition temperatures. This can be explained by the structure zone model (SZM). With an increase in the deposition temperatures from room temperature to $500^{\circ}C$, the surface roughness of the Al:Si films increased from 11 nm to 95 nm, whereas that of the pure Ag films increased from 6 nm to 47 nm at the same deposition temperature. Although Al:Si back reflectors with larger surface feature dimensions than pure Ag can be fabricated at lower deposition temperatures due to the lower melting point and the Si impurity drag effect, they show poor total and diffuse reflectance, resulting from the low reflectivity and reflection loss on the textured surface. For a further improvement of the light-trapping efficiency in solar cells, a new type of back reflector consisting of Ag/Al:Si bilayer is suggested. The surface morphology and reflectance of this reflector are closely dependent on the Al:Si bottom layer and the Ag top layer. The relationship between the surface topography and the light-scattering properties of the bilayer back reflectors is also reported in this paper.

Improvement of Operating Stabilities in Organic Field-Effect Transistors by Surface Modification on Polymeric Parylene Dielectrics (Parylene 고분자 유전체 표면제어를 통한 OFET의 소자 안정성 향상 연구)

  • Seo, Jungyoon;Oh, Seungteak;Choi, Giheon;Lee, Hwasung
    • Journal of Adhesion and Interface
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    • v.22 no.3
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    • pp.91-97
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    • 2021
  • By introducing an organic interlayer on the Parylene C dielectric surface, the electrical device performances and the operating stabilities of organic field-effect transistors (OFETs) were improved. To achieve this goal, hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (ODTS), as the organic interlayer materials, were used to control the surface energy of the Parylene C dielectrics. For the bare case used with the pristine Parylene C dielectrics, the field-effect mobility (μFET) and threshold voltage (Vth) of dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]- thiophene (DNTT) FET devices were measured at 0.12 cm2V-1s-1 and - 5.23 V, respectively. On the other hand, the OFET devices with HMDS- and ODTS-modified cases showed the improved μFET values of 0.32 and 0.34 cm2V-1s-1, respectively. More important point is that the μFET and Vth of the DNTT FET device with the ODTS-modified Parylene C dielectric presented the smallest changes during a repeated measurement of 1000 times, implying that it has the most stable operating stability. The results could be meaned that the organic interlayer, especially ODTS, effectively covers the Parylene C dielectric surface with alkyl chains and reduces the charge trapping at the interface region between active layer and dielectric, thereby improving the electrical operating stability.

Development of low cost and high efficiency silicon thin-film and a-Si:H/c-Si hetero-junction solar cells using low temperature silicon thin-films (고품질 실리콘 박막을 이용한 저가 고효율 실리콘 박막 및 a-Si:H/c-Si 이종접합 태양전지 개발)

  • Lee, Jeong-Chul;Lim, Chung-Hyun;Ahn, Sae-Jin;Yun, Jae-Ho;Kim, Seok-Ki;Kim, Dong-Seop;Yang, Sumi;Kang, Hee-Bok;Lee, Bo-young;Yi, Junsij;Son, Jinsoo;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2005.06a
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    • pp.113-116
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    • 2005
  • In this paper, silicon thin-film solar cells(Si- TFSC) and a-Si/c-Si heterojunction solar cells(HJ-cell) are investigated. The Si-TFSC was prepared on glass substrate by depositing $1-3{\mu}m$ thin-film silicons by glow discharge method. The $a-Si:H/{\mu}c-Si:H$ tandem solar cells on textured ZnO:A1 TCO (transparent conducting oxide) showed improved Jsc in top and bottom cells than that on $SnO_2:F$ TCO. This enhancement of jsc resulted from improved light trapping effect by front textured ZnO:A1. The a-Si/c-Si HJ-cells with simple structure without high efficiency features are suffering from low Voc and Jsc. The improvement of front nip and back interface properties by adopting high quality silicon-films at low temperature should be done both for increasing device performances and production cost.

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Effects of Multi-layer and TiCl4 Treatment for TiO2 Electrode in Dye-sensitized Solar Cell (염료감응 태양전지의 TiO2 전극의 다중층 및 TiCl4 처리에 따른 효과)

  • Kim, Gyeong-Ok;Kim, Ki-Won;Cho, Kwon-Koo;Ryu, Kwang-Sun
    • Applied Chemistry for Engineering
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    • v.22 no.2
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    • pp.190-195
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    • 2011
  • To investigate the photon-trapping effect and scattering layer effect of $TiO_2$ multi-layer in dye-sensitized solar cell (DSSC) and the degree of recombination of electrons at the electrode treated $TiCl_4$, we formed electrodes of different conditions and obtained the most optimal electrode conditions. To estimate characteristics of the cell, IV curve, UV-Vis spectrophotometer, electrochemical impedance spectroscopy (EIS) and incident photon-to-current conversion efficiency (IPCE) were measured. As a result, we confirmed that the multi-layer's efficiency was higher than that of monolayer in the IV curve and the performance of $TiCl_4$ treated electrode was increased according to decreasing the impedance of EIS. Among several conditions, the efficiency of the cell with scattering layer is higher than that of a layer with the base electrode about 19%. Because the light scattering layer enhances the efficiency of the transmission wavelength and has long electron transfer path. Therefore, the value of the short circuit current increases approximately 10% and IPCE in the maximum peak also increases about 12%.

Microstructure evolution and effect on deuterium retention in oxide dispersion strengthened tungsten during He+ irradiation

  • Ding, Xiao-Yu;Xu, Qiu;Zhu, Xiao-yong;Luo, Lai-Ma;Huang, Jian-Jun;Yu, Bin;Gao, Xiang;Li, Jian-Gang;Wu, Yu-Cheng
    • Nuclear Engineering and Technology
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    • v.52 no.12
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    • pp.2860-2866
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    • 2020
  • Oxide dispersion-strengthened materials W-1wt%Pr2O3 and W-1wt%La2O3 were synthesized by wet chemical method and spark plasma sintering. The field emission scanning electron microscopy (FE-SEM) analysis, XRD and Vickers microhardness measurements were conducted to characterize the samples. The irradiations were carried out with a 5 keV helium ion beam to fluences up to 5.0 × 1021 ions/m2 under 600 ℃ using the low-energy ion irradiation system. Transmission electron microscopy (TEM) study was performed to investigate the microstructural evolution in W-1wt%Pr2O3 and W-1wt%La2O3. At 1.0 × 1020 He+/m2, the average loops size of the W-1wt%Pr2O3 was 4.3 nm, much lower than W-1wt% La2O3 of 8.5 nm. However, helium bubbles were not observed throughout in both doped W materials. The effects of pre-irradiation with 1.0 × 1021 He+/m2 on trapping of injected deuterium in doped W was studied by thermal desorption spectrometry (TDS) technique using quadrupole mass spectrometer. Compared with the samples without He+ pre-irradiation, deuterium (D) retention of doped W materials increased after He+ irradiation, whose retention was unsaturated at the damage level of 1.0 × 1022D2+/m2. The present results implied that irradiation effect of He+ ions must be taken into account to evaluate the deuterium retention in fusion material applications.