• Title/Summary/Keyword: Energy trap

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Current-Voltage Characteristics of Organic Light-Emitting Diodes with a Variation of Temperature (온도 변화에 따른 유기 전기 발광 소자의 전압-전류 특성)

  • Kim, Sang-Geol;Hong, Jin-Ung;Kim, Tae-Wan
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.7
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    • pp.322-327
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    • 2002
  • Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/Alq$_3$/Al to understand conduction mechanism. The current-voltage characteristics were measured in the temperature range of 8K ~ 300K. We analyzed an electrical conduction mechanism of the OLEDS using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling. In the temperature range above 150k, the conduction mechanism could be explained by space charge limited current from the inversely proportional temperature dependence of exponent m. The characteristic trap energy is found to be about 0.15ev. At low temperatures below 150k, the Fowler-Nordheim tunneling conduction mechanism is dominant. We have obtained a zero field barrier height to be about 0.6~0.8eV.

Experimental Study for Gate Trap and Generation Current using DCIV Method

  • Kim, Young Kwon;Lee, Dong Bin;Choi, Won Hyeok;Park, Taesik;Lee, Myoung Jin
    • KEPCO Journal on Electric Power and Energy
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    • v.2 no.2
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    • pp.223-225
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    • 2016
  • The newly proposed analysis method using a direct-current current-voltage (DCIV) simulation is introduced for investigating leakage current composing MOS transistor. From comparing the density and location of traps using DCIV method and investigating the leakage current of gate channel transistor, we proposed the graphical analysis method to correlate the DCIV current and leakage mechanism by the traps. And, our graphical method intuitively explains that leakage current in MOS transistor is well correlated with the DCIV current of the MOS transistor arrays due to two kinds of traps created by Fowler-Nordheim (F-N) stress and Hot carrier stress, respectively.

Influence of the Deposition Temperature on the Structural and Electrical Properties of LPCVD Silicon Films (증착온도가 LPCVD 실리콘 박막의 물성과 전기적 특성에 미치는 영향)

  • 홍찬희;박창엽
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.7
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    • pp.760-765
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    • 1992
  • The material properties and the TFT characteristics fabricated on SiOS12T substrate by LPCVD using SiHS14T gas were investigated. The deposition rate showed Arrhenius behavior with an activation energy of 31Kcal/mol. And the transition temperature form amorphous to crystalline deposition was observed at 570$^{\circ}C$-580$^{\circ}C$. The strong(220) texture was observed as the deposition temperature increases. XRD analysis showed that the film texture of the as-deposited polycrystalline silicon does not change after annealing at 850$^{\circ}C$. The fabricated TFT's based on the as-deposited amorphous film showed superior electrical characteristics to those of the as-deposited polycrystalline films. It is considered that the different electrical characteristics result from the difference of flat band voltage(VS1FBT) due to the interface trap density between the gate oxide and the active channel.

A Study on the Modeling of Leakage Current in Polysilicon TFT (다결정 실리콘 TFT의 누설전류 모델링에 관한 연구)

  • Park, Jung-Hoon;Lee, Joo-Chang;Kim, Young-Cig;Rhie, Dong-Hee;Sung, Man-Young
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.1250-1252
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    • 1993
  • Enhancement mode n-channel TFT leakage current(off current : $V_G<0$) that is little agreement on the conduction mechanism is major disadvantage of poly-silicon TFT in practical use, characteristic analysis and model ing. In this paper, new modeling of leakage current is proposed. The activation energy of leakage current, which is dependent on gate voltage, and leakage current dependent on poly silicon thickness are plausibly explained with this model. This model indicate that the reduction of leakage current is attributable to a decrease of maximum laterial electric field strength in the drain depletion region and to the density of trap.

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Current Understanding on the Metabolism of Neutrophils

  • Jae-Han Jeon;Chang-Won, Hong;Eun Young Kim;Jae Man Lee
    • IMMUNE NETWORK
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    • v.20 no.6
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    • pp.46.1-46.13
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    • 2020
  • Neutrophils are innate immune cells that constitute the first line of defense against invading pathogens. Due to this characteristic, they are exposed to diverse immunological environments wherein sources for nutrients are often limited. Recent advances in the field of immunometabolism revealed that neutrophils utilize diverse metabolic pathways in response to immunological challenges. In particular, neutrophils adopt specific metabolic pathways for modulating their effector functions in contrast to other immune cells, which undergo metabolic reprogramming to ensure differentiation into distinct cell subtypes. Therefore, neutrophils utilize different metabolic pathways not only to fulfill their energy requirements, but also to support specialized effector functions, such as neutrophil extracellular trap formation, ROS generation, chemotaxis, and degranulation. In this review, we discuss the basic metabolic pathways used by neutrophils and how these metabolic alterations play a critical role in their effector functions.

Preparation and Characterization of Sulfonated Poly (Arylene Ether Sulfone) Random Copolymer-Polyolefin Pore-filling Separators with Metal Ion Trap Capability for Li-ion Secondary Battery (리튬이온 이차전지용 금속이온 선택성 술폰화 폴리아릴렌에테르술폰 공중합체-폴리올레핀 함침격리막 제조 및 특성)

  • Jeong, Yeon Tae;Ahn, Juhee;Lee, Chang Hyun
    • Membrane Journal
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    • v.26 no.4
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    • pp.310-317
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    • 2016
  • Lithium ion secondary battery (LISB) is an energy conversion system operated via charging-discharging cycle based on Lithium ion migration. LISB has a lot of advantages such as high energy density, low self-discharge rate, and a relatively high lifetime. Recently, increasing demands of electric vehicles have been encouraging the development of LISB with high capacity. Unfortunately, it causes some critical safety issues. It includes dendrite formation on negative electrode, resulting in electric shortage problems and battery explosion. Also, the elevated temperatures occurred during the LISB operation induces thermal shrinkage of polyolefin (e.g., polyethylene and polypropylene) separators. Consequently, the low thermal stability leads to decay of LISB performances and the reduction of lifetime. In this study, sulfonated poly (arylene ether sulfone) (SPAES) random copolymers were used as key materials to prepare polyolefin pore-filling separator. The resulting separators were evaluated in the term of metal ion chelation capability associated with dendrite formation, $Li^+$ ion conductivity and thermal durability.

Photoelectrochemical Water Oxidation Using ZnO Nanorods Coupled with Cobalt-Based Catalysts

  • Jeon, Tae-Hwa;Choi, Sung-Kyu;Jeong, Hye-Won;Kim, Seung-Do;Park, Hyun-Woong
    • Journal of Electrochemical Science and Technology
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    • v.2 no.4
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    • pp.187-192
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    • 2011
  • Photoelectrochemical performances of ZnO electrodes are enhanced by coupling with cobalt-based catalyst (CoPi) in phosphate electrolyte (pH 7). For this study, hexagonal pillar-shaped ZnO nanorods are grown on ZnO electrodes through a chemical bath deposition, onto which CoPi is deposited with different photodeposition times (10-30 min). A scanning electron microscopic study indicates that CoPi deposition does not induce any change of ZnO morphology and an energy-dispersive X-ray spectroscopic analysis shows that inorganic phosphate ions (Pi) exist on ZnO surface. Bare ZnO electrodes generate the current of ca. $0.36mA/cm^2$ at a bias potential of 0.5 V vs. SCE, whereas ZnO/CoPi (deposited for 10 min) has ca. 50%-enhanced current ($0.54mW/cm^2$) under irradiation of AM 1.5G-light ($400mW/cm^2$). The excess loading of CoPi on ZnO results in decrease of photocurrents as compared to bare ZnO likely due to limited electrolyte access to ZnO and/or CoPi-mediated recombination of photogenerated charge carriers. The primary role of CoPi is speculated to trap the photogenerated holes and thereby oxidize water into molecular oxygen via an intervalency cycle among Co(II), Co(III), and Co(IV).

Modification of ultrafiltration membranes with carbon nanotube buckypaper for fouling alleviation

  • Guo, Jin;Liu, Jian-Hong;Wang, Li-Ying;Liu, Hong
    • Membrane and Water Treatment
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    • v.6 no.1
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    • pp.1-13
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    • 2015
  • The modification of ultrafiltration membranes with carbon nanotube (CNT) buckypaper on fouling control was investigated. Two types of commercially available flat-sheet membranes were used: PS35 and PES900C/D (PES) (the PS35 membranes were hydrophilic with a molecular weight cutoff of 20 kDa, and the PES membranes were hydrophobic with a molecular weight cutoff of 20 kDa). The CNT buckypaper modified ultrafiltration membranes were prepared by filtering a CNT suspension through the flat-sheet membrane in a dead-end ultrafiltration unit. After modification, the pure water flux of PES was significantly increased, while the pure water flux of PS35 was decreased. The properties of the CNT modified membranes were also investigated. Considering the antifouling properties, pure water flux of the modified membrane, and the stability of CNT buckypaper layer on the membrane surface, ethanol solution with a concentration of 50 wt.%, multi-walled carbon nanotubes (MWCNTs) with a larger diameter (30-50 nm), and the CNT loading with $7.5g/m^2$ was selected. The CNT buckypaper on the surface of ultrafiltration membranes can trap the pollutants in sewage effluent and prevent them reaching the surface of virgin membranes. Water quality analysis showed that the effluent quality of the modified membrane was obviously improved. The removal efficiency of humic acid and protein-like matters by the modified membrane was significant. These results indicate the potential application of the CNT buckypaper layer modified membranes in the field of wastewater reclaim.

Effects of Fully Filling Deep Electron/Hole Traps in Optically Stimulated Luminescence Dosimeters in the Kilovoltage Energy Range

  • Chun, Minsoo;Jin, Hyeongmin;Lee, Sung Young;Kwon, Ohyun;Choi, Chang Heon;Park, Jong Min;Kim, Jung-in
    • Journal of Radiation Protection and Research
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    • v.47 no.3
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    • pp.134-142
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    • 2022
  • Background: This study investigated the characteristics of optically stimulated luminescence dosimeters (OSLDs) with fully filled deep electron/hole traps in the kV energy ranges. Materials and Methods: The experimental group consisted of InLight nanoDots, whose deep electron/hole traps were fully filled with 5 kGy pre-irradiation (OSLDexp), whereas the non-pre-irradiated OSLDs were arranged as a control group (OSLDcont). Absorbed doses for 75, 80, 85, 90, 95, 100, and 105 kVp with 200 mA and 40 ms were measured and defined as the unit doses for each energy value. A bleaching device equipped with a 520-nm long-pass filter was used, and the strong beam mode was used to read out signal counts. The characteristics were investigated in terms of fading, dose sensitivities according to the accumulated doses, and dose linearity. Results and Discussion: In OSLDexp, the average normalized counts (sensitivities) were 12.7%, 14.0%, 15.0%, 10.2%, 18.0%, 17.9%, and 17.3% higher compared with those in OSLDcont for 75, 80, 90, 95, 100, and 105 kVp, respectively. The dose accumulation and bleaching time did not significantly alter the sensitivity, regardless of the filling of deep traps for all radiation qualities. Both OSLDexp and OSLDcont exhibited good linearity, by showing coefficients determination (R2) > 0.99. The OSL sensitivities can be increased by filling of deep electron/hole traps in the energy ranges between 75 and 105 kVp, and they exhibited no significant variations according to the bleaching time.

Analysis of Sensor Measurement Errors for Precision Measurement of Shaft Vibration (정밀 축진동 측정을 위한 센서측정오차 분석)

  • 전오성;김동혁;최병천
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 1991.04a
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    • pp.75-79
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    • 1991
  • 고도로 산업화가 진행됨에 따라 회전기계는 더욱 중요시되고 있으며 이의 성능 향상에 부단한 노력이 경주되고 있다. 특히 우주 시대의 개막과 더불어 우주선 및 인공위성에 사용하기 위해 초소형이며 초고속의 고성능회전모타 를 개발하기에 이르렀다. 한 예로서 미국립항공우주국(NASA)의 스페이스셔 틀에 사용되는 주엔진 터보펌프를 들 수 있는데 이 터보펌프는 접시만한 크 기로써 71000마력을 생성해 낸다. 이러한 가공할 만한 에너지 밀도와 유량을 감당해 내려면 종래의 회전기계보다는 훨씬 더 높은 회전속도를 가져야 한 다. 이러한 회전체는 큰 관성부하와 진 동 및 동안정성의 문제등을 내포하고 있다. 고성능 회전기계의 또다른 예로서 초정밀 가공용 공작기계를 들 수 있 다. 선반 혹은 밀링머신으로 초정밀가공을 행하기 위해서는 회전축의 진동이 극히 작아야 한다. 이와 같이 오늘날 갈수록 초고성능 초정밀도를 추구함에 있어서 회전축의 진동을 현장에서 모니터링하고 이 진동데이터를 분석하여 회전축을 제어하는 것이 강력히 요구되어진다. 따라서 in-situ 측정이 중요성 을 띠게 되었는데 이는 제어기술의 바탕이 되는 자료를 현장에서 제공할 수 있기 때문이다. 회전축 진동측정의 대상이 되는 것들은 모타, 발전기, 엔진 및 터빈등을 대표적으로 들 수가 있다. 여기서 소형회전기계의 축표면과 같 이 비교적 곡면을 이루고 있는 부분의 진동변위 측정에 신중한 고려가 요구 되어 진다. 이는 축의 곡면도에 따라 감도가 변화하기 때문이다. 따라서 평 판에 대한 calibration 챠트를 회전기계축진동 변위환상에 이용하면 곡률에 따라서 오차가 생기게 된다. 본 연구에서는 비접촉 축진동측정시 발생되는 오차에 대하여 검토하고자 한다. from the studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.

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