• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.105-111
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• 2003

In order to find out whether a reflectron can be used as a mass selector in the gas cluster experiment, computer simulation are performed using the SIMION’ program. flight paths of energetic particles in the reflectron does not depend on their mass but energy. In the case of $(CO_2)n $ gas cluster, however, the position of clusters just after passing through the reflectron are spacially distributed with respect to the mass. The reason that the masses spacially distributes is the E/m ratio of clusters is constant, and it is the key reason that a reflectron can be used as a mass selector. Mass resolution does not depend on the cluster size and incident angle of clusters, and it is proportional to the incident position of clusters. This means that mass resolution can be enhanced by resizing the dimension of a reflectron. Therefore, it is concluded that a reflectron can be used as a mass selector with excellent mass resolution in the gas cluster experiment.

• Journal of the Korean Physical Society
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• v.80
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• pp.1076-1080
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• 2022

For preventing a sneak current in the 3D cross-point array, the selection device is essentially necessary and an n-MOSFET has been used for the selection device. However, the three-terminal electrodes of n-MOSFET make to achieve a high density of a cross-point array difficult. As a solution, using a selector having two terminal electrodes has been intensively researched. We presented that the CuGeS₂/GeS₂-based super-linear-threshold-switching (SLTS) selector device with the insertion of optimal TiN liner thickness exhibited outstanding electrical characteristics and reliability. The dependency of electrical characteristics and reliability on various TiN liner thicknesses were investigated. In addition, the principles of reliability and electrical characteristics improvement were understood through the energy dispersive spectroscopy elemental mapping and line profile of Cu. The adequate amount of Cu distributed in GeS₂ resistive switching layer is a key factor to achieve excellent electrical characteristics and reliability for an ultra-high-density 3D cross-point array cell.

• KIPS Transactions on Computer and Communication Systems
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• v.1 no.1
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• pp.1-10
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• 2012

The way-lookup cache and the way-tracking cache are considered to be the most energy-efficient when used for level 1 and level 2 caches, respectively. This paper proposes an energy-efficient set-associative cache using the bi-mode way-selector that combines the way selecting techniques of the way-tracking cache and the way-lookup cache. The simulation results using an Alpha 21264-based system show that the bi-mode way-selecting L1 instruction cache consumes 27.57% of the energy consumed by the conventional set-associative cache and that it is as energy-efficient as the way-lookup cache when used for L1 instruction cache. The bi-mode way-selecting L1 data cache consumes 28.42% of the energy consumed by the conventional set-associative cache, which means that it is more energy-efficient than the way-lookup cache by 15.54% when used for L1 data cache. The bi-mode way-selecting L2 cache consumes 15.41% of the energy consumed by the conventional set-associative cache, which means that it is more energy-efficient than the way-tracking cache by 16.16% when used for unified L2 cache. These results show that the proposed cache can provide the best level of energy-efficiency regardless of the cache level.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.2
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• pp.44-50
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• 2002

Conventional acoustic echo cancelers using ES(Exponentially weighted Stepsize) algorithm have simple operational configuration and fast convergence speed batter then NLMS algorithm, but they are very weak in external noise because ES algorithm updates filter taps using an average energy reduction rate of room impulse response in specific acoustical condition. So, a new configuration of acoustic echo canceler with stepsize generator and selector is proposed in this thesis. The proposed stepsize generator and selector improve conventional acoustic echo canceler's weakness in external noise and improve the system robustness. The stepsize generator generates additional stepsize value using moving averager, which is the residual noise energy of error signal multiplied by constant ${\gamma}$. The stepsize selector selects the stepsize value that has better performance in an acoustic echo canceler using a coefficient decision factor ${\Delta}_{differ}$ The simulation results show that the proposed algorithm reduces residual error by 5[dB] to 10[dB], improves misadjustment regardless of external noise's SNR. 

• Journal of the Korean Solar Energy Society
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• v.32 no.2
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• pp.113-119
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• 2012

This study aims to examine the effect of the combined application of green roof and PV system on the PV efficiency by measuring the temperature and performance of PV module in order to reduce the temperature on the roof using roof planting system and determine the potential of efficient increase in solar-light power generation. In the experimental methodology, either monocrystalline or polycrystalline PV module was installed in green roof or non-green roof, and then the surface temperature of PV was measured by TR-71U thermometer and again the performance, module body temperature, and conversion efficiency were measured by MP-160, TC selector MI-540, and PV selector MI-520, respectively. As a result, the average body temperature of monocrystalline module was lower by $6.5^{\circ}C$ in green roof than in non-green roof; that of polycrystalline module was lower by $8.8^{\circ}C$ in green roof than in non-green roof. In the difference of generation, the electricity generation of monocrystalline module in green roof was 46.13W, but that of polycrystalline module was 68.82 W, which indicated that the latter produced 22.69W more than the former.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.311-316
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• 2008

Since the presence of the chemical impurities and defect at surfaces and interfaces greatly influence the properties of various semiconductor devices, an unambiguous chemical characterization of the metal and semiconductor surfaces become more important in the view of the miniaturization of the devices toward nano scale. Among the various conventional surface characterization tools, Electron-induced Auger Electron Spectroscopy (EAES), X-ray Photoelectron Spectroscopy (XPS) and Secondary Electron Ion Mass Spectroscopy (SIMS) are being used for the identification of the surface chemical impurities. Recently, a novel surface characterizaion technique, Positron-annihilation induced Auger Electron Spectroscopy (PAES) is introduced to provide a unique method for the analysis of the elemental composition of the top-most atomic layer. In PAES, monoenergetic positron of a few eV are implanted to the surface under study and these positrons become thermalized near the surface. A fraction of the thermalized positron trapped at the surface state annihilate with the neighboring core-level electrons, creating core-hole excitations, which initiate the Auger process with the emission of Auger electrons almost simultaneously with the emission of annihilating gamma-rays. The energy of electrons is generally determined by employing ExB energy selector, which shows a poor resolution of $6{\sim}10eV$. In this paper, time-of-flight system is employed to measure the electrons energy with an enhanced energy resolution. The experimental result is compared with simulation results in the case of both linear (with retarding tube) and reflected TOF systems.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.10-15
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• 2021

Cache bypassing schemes have been studied to remove unnecessary updating the data in cache blocks. Among them, a statistics-based cache bypassing method for asymmetric-access caches is one of the most efficient approach for non-voliatile memories and shows the lowest cache access latency. However, it is proposed under the condition of the normal cache system, so further study is required for the hybrid cache architecture. This paper proposes a novel cache bypassing scheme, called hybrid bypassing block selector. In the proposal, the new model is established considering the SRAM region and the non-volatile memory region separately. Based on the model, hybrid bypassing decision block is implemented. Experiments show that the hybrid bypassing decision block saves overall energy consumption by 21.5%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.537-542
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• 2011

Recently, n-InZnO/p-CuO oxide diode has attracted great attention due to possible application for selector device of 3-dimensional cross-point resistive memory structures. To investigate the detailed properties of InZnO (IZO), we have deposited IZO films on the fused quartz substrate using PLD (pulsed laser deposition) method at oxygen pressure of 1~100 mTorr and substrate temperature of RT$\sim600^{\circ}C$. The influence of oxygen pressure and substrate temperature on structural, optical and electrical of IZO films is analyzed using XRD (x-ray diffraction), SEM (scanning electron microscopy), UV-Vis spectrophotometry, spectroscopic ellipsometry (SE) and hall measurements. The XRD results shows that the deposited thin films are polycrystalline over $300^{\circ}C$ of substrate temperature independent of oxygen pressure. The resistivity of films was increased as oxygen pressure and substrate temperature decrease. The thickness and optical constants of the deposited films measured with UV-Vis spectrophotometer were also compared with those of broken SEM and SE results.

• Journal of the Korean Society of Radiology
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• v.4 no.2
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• pp.21-25
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• 2010

Recently, various semiconductor compounds as radiation detection material have been researched for a diagnostic x-ray detector application. In this paper, we have fabricated the CdS detecton sensor that has good photosensitivity and high x-ray absorption efficiency among other semiconductor compounds, and evaluated the application feasibility by investigating the detection properties about energy range of diagnostic x-ray generator. We have fabricated the line voltage selector(LCV) for a signal acquisition and quantities of CdS sensor, and designed the voltage detection circuit and rectifying circuit. Also, we have used a relative relation algorithm according to x-ray exposure condition, and fabricated the interface board with DAC controller. Performance evaluation was investigated by data processing using ANOVA program from voltage profile characteristics according to resistive change obtained by a tube voltage, tube current, and exposure time that is a exposure condition of x-ray generator. From experimental results, an error rates were reduced according to increasing of a tube voltage and tube current, and a good properties of 6%(at 90 kVp) and 0.4%(at 320 mA) ere showed. and coefficient of determination was 0.98 with relative relation of 1:1. The error rate according to x-ray exposure time showed exponential reduction because of delayed response velocity of CdS material, and the error rate has 2.3% at 320 msec. Finally, the error rate according to x-ray dose is below 10%, and a high relative relation was showed with coefficient of determination of 0.9898.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.32-38
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• 2017

Insulating $TaN_x$ films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and $N_2+H_2$ mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a $Pt/TaN_x/Pt$ stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the PooleFrenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick $TaN_x$ films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution ($O_N$) and interstitial nitrogen ($N_i$) in the $TaN_x$ films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of $TaN_x$ film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.