• Journal of Magnetics
• /
• v.15 no.3
• /
• pp.116-122
• /
• 2010

An accurate analytical equation for the total energy in the framework of the single domain model is used to study the thermal stability of nanostructured synthetic ferrimagnets. Elliptical cells are considered that have lateral dimensions of 160 nm (long axis)$\times$80 nm (short axis) and varying values of thickness asymmetry for the two magnetic layers. The direction of the applied magnetic field, which points to the $45^{\circ}$ direction, is in the opposite direction to the thicker layer magnetization. A significant difference is observed in the applied magnetic field dependencies of the equilibrium magnetic configuration and the magnetic energy barrier when using the simplifying assumption that the self-demagnetizing field is identical in magnitude to the dipole field. At a small thickness asymmetry of 0.2 nm, for example, the magnetic energy barrier is reduced from 68 kT (T=300 K) to 6 kT at the remanent state and a progressive switching behavior changes into a critical behavior, as the simplifying assumption is used. The present results clearly demonstrate the need for an accurate analytical equation for the total energy in predicting the thermal stability of nanostructured synthetic ferrimagnets.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.3 no.1
• /
• pp.1-12
• /
• 2003

This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.10 no.3
• /
• pp.203-212
• /
• 2010

In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
• /
• v.17 no.10
• /
• pp.947-955
• /
• 2005

For the purpose of evaluating the thermal performance for air-barrier air conditioning system in perimeter zone, two air-conditioning systems, conventional perimeter air-conditioning system and air-barrier system, are evaluated and compared by scale model experiment and simulation during cooling season. As a result, measurement shows that supply air velocity of 1 m/s in the upstream direction at perimeter is more effective. Air-barrier system could reduce the cooling energy by $10\sim20\%$ compared with conventional system. Numerical simulation was carried out considering solar effect for reliable result. This method has improved the accuracy of numerical simulation for the space affected by the solar radiation. Both measurement and simulation results show that supply air velocity of 1 m/s at perimeter is the most effective.

• Transactions of the Korean Society of Automotive Engineers
• /
• v.9 no.5
• /
• pp.195-205
• /
• 2001

The mechanical properties of aluminum honeycomb on the direction of axial crushing under quasistatic loading test was investigated. The crushing process was simulated numerically by full-scale finite element models. Simulations reproduce the experimental results both qualitatively as well as quantitatively. From the investigation, we suggested the constitutive model of energy absorbing honeycomb structure for large scale impact analysis. Real impact test of the WB(Moving Deformable Barrier) was carried and compared with finite element simulation. Constitutive model used in the numerical simulation had a good correlation with experiment. By suggesting the optimizing method fur honeycomb cell configuration design, relationship between cell configuration and crush strength is studied.

• ETRI Journal
• /
• v.44 no.3
• /
• pp.504-511
• /
• 2022

Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change leads to a reduced barrier height due to quantum coupling among the three-dimensional motions of channel electrons. Thus, an analysis and physical model of the gate leakage current that includes drift velocity is proposed. Numerical calculations show that the negative and positive temperature dependence of gate leakage currents decreases across the barrier as the field increases. They also demonstrate that source-drain voltage can have an effect of 1 to 2 orders of magnitude on the gate leakage current. The proposed model agrees well with the experimental results.

• Journal of the Korean Chemical Society
• /
• v.26 no.3
• /
• pp.117-127
• /
• 1982

In order to analyze the role of axial carbon atoms in rotational barrier of ethane, we take the carbonless ethane, as a model, which is made of six hydrogens in coordinates of ethane. The energy of the system is calculated by McWeeny's open-shell restricted Hartree-Foch selfconsistent-field (RHF-SCF) method, and the transition density on the staggered-to-eclipsed rotation is examined. As being expected, the eclipsed form of the model is more stable than the staggered one. Through the transition density comparison of this model and real ethane, it is found that the existence of the axial carbon atoms induces the electronic density to be diluted in the vicinity of protonic sites and to be attracted to the region of carbon atoms or further to C-C bond region as the barrier is traversed. This migration of electronic charge tell us that the barrier to the internal rotation of ethane originates from the fact that the magnitude of electronic energy depression is not large enough to offset the increased nuclear-nuclear repulsion on the staggered-to-eclipsed rotation.

• Nuclear Engineering and Technology
• /
• v.55 no.11
• /
• pp.4173-4180
• /
• 2023

The stability of engineered barriers in high-level radioactive waste disposal systems can be influenced by the decay heat generated by the waste. This study focuses on the thermal analysis of various canister designs to effectively lower the maximum temperature of the engineered barrier. A numerical model was developed and employed to investigate the heat dissipation potential of copper rings placed across the buffer. Various canister designs incorporating copper rings were presented, and numerical analysis was performed to identify the design with the most significant temperature reduction effect. The results confirmed that the temperature of the buffer material was effectively lowered with an increase in the number of copper rings penetrating the buffer. Parametric studies were also conducted to analyze the impact of technical gaps, copper thickness, and collar height on the temperature reduction. The numerical model revealed that the presence of gaps between the components of the engineered barrier significantly increased the buffer temperature. Furthermore, the reduction in buffer temperature varied depending on the location of the gap and collar. The methods proposed in this study for reducing the buffer temperature hold promise for contributing to cost reduction in radioactive waste disposal.

• Journal of the Korean Solar Energy Society
• /
• v.25 no.2
• /
• pp.35-43
• /
• 2005

This study aims to evaluate the natural lighting performance in the sound barrier tunnel. Therefore, to evaluate the daylighting performance, the combinations of 3 tunnel roof types which are flat-roof-type(type A), slope-roof-type(type B), arch-roof-type(type C) and 3 window types which are side-window-type(type 1), one-window-roof type(type 2), two-window-roof type(type 3) are evaluated by experimenting small scaled models. In this 9 cases of experiment, illuminance levels of each case are analyzed and evaluated. The conclusion of this study is that slope-roof-type(B) and arch-roof-type(C) is preferable to flat-roof-type(A) and one-window-roof-type(B) and two-window-roof-type(C) is preferable to side-window-type(A) for daylighting in the sound barrier tunnel.

• Nuclear Engineering and Technology
• /
• v.36 no.3
• /
• pp.229-236
• /
• 2004

Radiation hardening is a multiscale phenomenon involving various processes over a wide range of time and length. We present a multiscale model for estimating the amount of radiation hardening in pressure vessel steel in the environment of a light water reactor. The model comprises two main parts: molecular dynamics (MD) simulation and a point defect cluster (PDC) model. The MD simulation was used to investigate the primary damage caused by displacement cascades. The PDC model mathematically formulates interactions between point defects and their clusters, which explains the evolution of microstructures. We then used a dislocation barrier model to calculate the hardening due to the PDCs. The key input for this multiscale model is a neutron spectrum at the inner surface of reactor pressure vessel steel of the Younggwang Nuclear Power Plant No.5. A combined calculation from the MD simulation and the PDC model provides a convenient tool for estimating the amount of radiation hardening.