• Title/Summary/Keyword: Embedded memory

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Implementation of Efficient and Reliable Flash File System (효율적이고 신뢰성 있는 플래시 파일시스템의 구현)

  • Jin, Jong-Won;Lee, Tae-Hoon;Lee, Seung-Hwan;Chung, Ki-Dong
    • Journal of Korea Multimedia Society
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    • v.11 no.5
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    • pp.651-660
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    • 2008
  • Flash memory is widely used in embedded systems because of its benefits such as non-volatile, shock resistant, and low power consumption. However, NAND flash memory suffers from out-place-update, limited erase cycles, and page based read/write operations. To solve these problems, YAFFS and RFFS, the flash memory file systems, are proposed. However YAFFS takes long time to mount the file system, because all the files are scattered all around flash memory. Thus YAFFS needs to fully scan the flash memory. To provide fast mounting, RFFS has been proposed. It stores all the block information, the addresses of block information and meta data to use them at mounting time. However additional operations for the meta data management are decreasing the performance of the system. This paper presents a new NAND flash file system called ERFFS (Efficient and Reliable Flash File System) which provides fast mounting and recovery with minimum mata data management. Based on the experimental results, ERFFS reduces the flash mount/recovery time and the file system overhead.

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Effects of $SiO_2$ or SiON tunneling gate oxide on Au nano-particles floating gate memory (Au 나노 입자를 이용한 floating gate memory에서 $SiO_2$ or SiON 터널링 게이트 산화막의 영향)

  • Koo, Hyun-Mo;Lee, Woo-Hyun;Cho, Won-Ju;Koo, Sang-Mo;Chung, Hong-Bay;Lee, Dong-Uk;Kim, Jae-Hoon;Lee, Min-Seung;Kim, Eun-Kyu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.67-68
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    • 2006
  • Floating gate non-volatile memory devices with Au nano-particles embedded in SiON or $SiO_2$ dielectrics were fabricated by digital sputtering method. The size and the density of Au are 4nm and $2{\times}10^{-12}cm^{-2}$, respectively. The floating gate memory of MOSFET with 5nm tunnel oxide and 45nm control oxide have been fabricated. This devices revealed a memory effect which due to proGrainming and erasing works perform by a gate bias stress repeatedly.

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Delay Operation Techniques for Efficient MR-Tree on Nand Flash Memory (낸드 플래시 메모리 상에서 효율적인 MR-트리 동작을 위한 지연 연산 기법)

  • Lee, Hyun-Seung;Song, Ha-Yoon;Kim, Kyung-Chang
    • Journal of KIISE:Computing Practices and Letters
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    • v.14 no.8
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    • pp.758-762
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    • 2008
  • Embedded systems usually utilize Flash Memories with very nice characteristics of non-volatility, low access time, low power and so on. For the multimedia database systems, R-tree is an indexing tree with nice characteristics for multimedia access. MR-tree, which is an upgraded version of R-tree, has shown better performance in searching, inserting and deleting operations than R-tree. Flash memory has sectors and blocks as a unit of read, write and delete operations. Especially, the delete is done on a unit of 512 byte blocks with very large operation time and it is also known that read and write operations on a unit of block matches caching nature of MT-tree. Our research optimizes MR-tree operations in a unit of Flash memory blocks. Such an adjusting leads in better indexing performance in database accesses. With MR-tree on a 512B block units we achieved fast search time of database indexing with low height of MR-tree as well as faster update time of database indexing with the best fit of flash memory blocks. Thus MR-tree with optimized operations shows good characteristics to be a database index schemes on any systems with flash memory.

Design of an Efficient FTL Algorithm for Flash Memory Accesses Using Sector-level Mapping (섹터 매핑 기법을 적용한 효율적인 FTL 알고리듬 설계)

  • Yoon, Tae-Hyun;Kim, Kwang-Soo;Hwang, Sun-Young
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.34 no.12B
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    • pp.1418-1425
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    • 2009
  • This paper proposes a novel FTL (Flash Translation Layer) algorithm based on sector-level mapping to reduce the number of total erase operations in flash memory accesses. The proposed algorithm can reduce the number of erase operations by utilizing the sector-level mapping table when writing data at flash memory. Sector-level mapping technique reduces flash memory access time and extendsthe life time of the flash memory. In the algorithm, wear-leveling is implemented by selecting victim blocks having the minimal number of erase operations, when empty spaces for write are not available. To evaluate the performance of the proposed FTL algorithm, experiments were performed on several applications, such as MP3 players, MPEG players, web browsers and document editors. The proposed algorithm reduces the number of erase operations by 72.4% and 61.9%, when compared with well-known BAST and FAST algorithms, respectively.

Nano-Floating Gate Memory Devices with Metal-Oxide Nanoparticles in Polyimide Dielectrics

  • Kim, Eun-Kyu;Lee, Dong-Uk;Kim, Seon-Pil;Lee, Tae-Hee;Koo, Hyun-Mo;Shin, Jin-Wook;Cho, Won-Ju;Kim, Young-Ho
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.1
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    • pp.21-26
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    • 2008
  • We fabricated nano-particles of ZnO, $In_2O_3$ and $SnO_2$ by using the chemical reaction between metal thin films and polyamic acid. The average size and density of these ZnO, $In_2O_3$ and $SnO_2$ nano-particles was approximately 10, 7, and 15 nm, and $2{\times}10^{11},\;6{\times}10^{11},\;2.4{\times}10^{11}cm^{-2}$, respectively. Then, we fabricated nano-floating gate memory (NFGM) devices with ZnO and $In_2O_3$ nano-particles embedded in the devices' polyimide dielectrics and silicon dioxide layers as control and tunnel oxides, respectively. We measured the current-voltage characteristics, endurance properties and retention times of the memory devices using a semiconductor parameter analyzer. In the $In_2O_3$ NFGM, the threshold voltage shift (${\Delta}V_T$) was approximately 5 V at the initial state of programming and erasing operations. However, the memory window rapidly decreased after 1000 s from 5 to 1.5 V. The ${\Delta}V_T$ of the NFGM containing ZnO was approximately 2 V at the initial state, but the memory window decreased after 1000 s from 2 to 0.4 V. These results mean that metal-oxide nano-particles have feasibility to apply NFGM devices.

Design and Evaluation of a Fast Boot-up Technique for Flash Memory based Computer Systems (플래시메모리 기반 컴퓨터시스템을 위한 고속 부팅 기법의 설계 및 성능평가)

  • Yim, Keun-Soo;Kim, Ji-Hong;Koh, Kern
    • Journal of KIISE:Computer Systems and Theory
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    • v.32 no.11_12
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    • pp.587-597
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    • 2005
  • Flash memory based embedded computing systems are becoming increasingly prevalent.These systems typically have to provide an instant start-up time. However, we observe that mounting a file system toy flash memory takes 1 to 25 seconds mainly depending on the flash capacity. Since the flash chip capacity is doubled in every year, this mounting time will soon become the most dominant reason of the delay of system start-up time Therefore, in this paper, we present instant mounting techniques for flash file systems by storing the In-memory file system metadata to flash memory when unmounting the file system and reloading the stored metadata quickly when mounting the file system. These metadata snapshot techniques are specifically developed for NOR- and NAND-type flash memories, while at the same time, overcoming their physical constraints. The proposed techniques check the validity of the stored snapshot and use the proposed fast trash recovery techniques when the snapshot is Invalid. Based on the experimental results, the proposed techniques can reduce the flash mounting time by about two orders of magnitude over the existing de facto standard flash file system, JFFS2.

Face detect hardware implementation for embedded system (임베디드 시스템 적용을 위한 얼굴검출 하드웨어 설계)

  • Kim, Yoon-Gu;Jeong, Yong-Jin
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.9
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    • pp.40-47
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    • 2007
  • For image processing hardware, including a face detecting engine, efficient constitution of external and internal memories is a consequential point because huge memory is required to store various signal processing filters and incoming images. In this paper, we modified a face detect algerian of a general filter method for efficient hardware design. In the hardware, several memory design techniques are presented for efficient handling of image data : re-accessing avoidance with minimized internal memory usage, residing frequently accessed memory and sequence memory accessing. The hardware which can process 25 frame image data per one second with 40KB internal memory was verified by using ARM(S3C2440A) and Virtex4 FPGA and it is being fabricated as a ASIC chip using Samsung CMOS 0.18um technology.

Implementation of Improved safety and reliability Embedded system using Backup and Restore of TMR Architecture (TMR 구조에서의 백업과 복원을 활용한 안정성 및 신뢰성 향상 임베디드 시스템 구현)

  • Park, Joo-Yul;Lee, Jun-Hwan;Kim, Hyo-Sang;Kim, Bong-Taek;Chung, Ki-Seok
    • Proceedings of the KSR Conference
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    • 2011.10a
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    • pp.188-194
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    • 2011
  • The purpose of this paper is to explain the implementation method in order to enhance stability and reliability of embedded system. In this research, Texas Instrument (TI)'s TMS570 MCU(Micro Controller Unit) is used to satisfy the standard of stability that is IEC 61508. IEC 61508 suggest SIL(Safety Integrity Level) from 1 to 4 and TMS570 is satisfied SIL3. Also, TMS570 can provide several stability functions can be used in realtime system. To use such functions, this paper suggest the solution about the defect that can be used in realtime system. In basic way TMR(Triple Modular Redundancy) suggested in addition to explain about the way to improve safety and reliability. Also this paper will suggest the method that reinforce the stability of calculation by using multiplex voter and memory.

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Power Management for Mobile Terminal (모바일 단말에서의 전원관리 기술)

  • Lee, Junghee;Park, Hojun;Kim, Jaemyoung
    • IEMEK Journal of Embedded Systems and Applications
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    • v.2 no.3
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    • pp.194-201
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    • 2007
  • As the performance of the mobile terminal becomes higher, the power consumption gradually increases. As a result, power management is one of the most important issues in mobile system with battery. In this paper, we describe an DPM(Dynamic Power Management) using DVS(Dynamic Power Management) as a power management mechanism in Qplus operating system. DVS generally considers a specific device such as CPU, whereas we consider the relations with other hardware components as well as each component. We specially focus on the relation between CPU, memory and LCD devices. We also designs a kernel monitor to collect information to decide the policy for power management. According to the experimental results, the proposed method enables to save much power.

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Self-adaptive IoT Software Platform for Interoperable Standard-based IoT Systems (협업가능 표준기반 IoT 시스템을 위한 자가적응 IoT 소프트웨어 플랫폼 개발)

  • Sung, Nak-Myoung;Yun, Jaeseok
    • IEMEK Journal of Embedded Systems and Applications
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    • v.12 no.6
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    • pp.369-375
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    • 2017
  • In this paper, we present a self-adaptive software platform that enables an IoT gateway to perform autonomous operation considering IoT devices connected each other in resource-constrained environments. Based on the oneM2M device software platform publicly available, we have designed an additional part, called SAS (self-adaptive software) consisting of MAM (memory-aware module), NAM (network-aware module), BAM (battery-aware module), DAM (data-aware module), and DH (decision handler). A prototype system is implemented to show the feasibility of the proposed self-adaptive software architecture. Our proposed system demonstrates that it can adaptively adjust the operation of gateway and connected devices to their resource conditions under the desired service scenarios.