• Bulletin of the Korean Chemical Society
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• 제28권10호
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• pp.1661-1664
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• 2007

Direct reaction of elemental silicon with a gaseous mixture of isopropyl chloride (1) and hydrogen chloride in the presence of copper catalyst using a stirred bed reactor equipped with a spiral band agitator gave isopropyldichlorosilane having a Si-H bond (2a) as a major product and isopropyltrichlorosilane (2b) along with chlorosilanes, trichlorosilane and tetrachlorosilane. A process for production of 2a was maximized using the 1:0.5 mole ratio of 1 to HCl and smaller size of elemental silicon at a reaction temperature of 220 °C. When a reaction was carried out by feeding a gaseous mixture of 1 [12.9 g/h (0.164 mol/h)] and HCl [2.98 g/h (0.082 mol/h)] to a contact mixture of elemental silicon (360 g) and copper (40 g) under the optimum condition for 45 h, 2a among volatile products kept up about 82 mol % until 35 h and then slowly decreased down 68 mol % in 45 h reaction. Finally 2a was obtained in 38% isolated yield (based on 1 used) with an 85% consumption of elemental silicon in a 45 h reaction. In addition to 2a, 2b was obtained as minor product along with chlorosilanes, trichlorosilane, and tetrachlorosilane. The decomposition of 1 was suppressed and the production of 2a improved by adding HCl to 1.

• Bulletin of the Korean Chemical Society
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• 제30권3호
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• pp.683-686
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• 2009

Slurry phase reaction of elemental silicon with methanol has been studied in the presence of copper using a small amount of cuprous chloride as an activator in DBT (dibenzyltoluene) at various temperatures from 200 ${^{\circ}C}$ to 320 ${^{\circ}C}$. Trimethoxysilane (1a) with a Si-H unit was obtained as the major product and tetramethoxysilane (1b) as the minor product. The reaction worked well using a 0.5 wt % CuCl as an activator. The optimum temperature for this direct synthesis of 1a was 240 ${^{\circ}C}$. Methoxysilanes were obtained in 95% yield with 81% selectivity to 1a from 85% conversion of elemental silicon.

• 자원리싸이클링
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• 제21권5호
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• pp.31-37
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• 2012

실리콘 웨이퍼공정에서 발생하는 실리콘 슬러지로부터 실리콘 및 탄화규소를 분리한 다음, 전해법으로 원소형태의 실리콘을 회수하는 연구를 수행하였다. 실리콘 슬러지의 주요 불순물은 절삭유, 금속불순물, 실리콘 및 실리콘 카바이드를 들 수 있다. 기계적 선별법으로 분리한 실리콘, 탄화실리콘 복합물을 $1000^{\circ}C$에 1시간동안 염화 배소하여 응축하고 회수한 사염화실리콘을 이온성액체인 $[Bmpy]Tf_2N$에 용해하여 전해액으로 사용하였다. 순환전위법으로부터 $[Bmpy]Tf_2N$의 안정한 전압구간과 사염화실리콘을 용해한 $[Bmpy]Tf_2N$ 전해액에서 실리콘의 환원으로 추정되는 환원피크를 얻을 수 있었다. 정전위법(-1.9 V vs. Pt-QRE)에서 1시간동안 금 전극 상에 전해한 다음, 전극표면을 XRD, SEM-EDS 및 XPS 분석을 통하여 실리콘이 원소형태로 전착되었음을 확인하였으며, 미량의 산소가 검출되는 것은 분석과정에서 시편이 공기 중에 노출되었기 때문으로 판단된다.

• Bulletin of the Korean Chemical Society
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• 제31권5호
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• pp.1257-1261
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• 2010

The electrochemical performances of anode composites comprising elemental silicon (Si), silicon monoxide (SiO), and graphite (C) were investigated. The composite devoid of elemental silicon (SiO:C = 1:1) and its carbon coated composite showed reduced capacity degradation with measured values of 606 and 584 mAh/g at the fiftieth cycle. The capacity retention nature when the composites were cycled followed the order of Si:SiO:C = 3:1:4 < Si:SiO:C = 2:2:4 < SiO:C = 1:1 < SiO:C = 1:1 (carbon coated). A comparison of the capacity retention properties for the composites in terms of the silicon content showed that a reduced silicon content increased the stability of the composite electrodes. Even though the carbon-coated composite delivered low capacity during cycling compared to the other composites, its low capacity degradation made the anode a better choice for lithium ion batteries.

• Bulletin of the Korean Chemical Society
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• 제21권10호
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• pp.959-968
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• 2000

Direct reaction of elemental silicon with a mixture of (dichloromethyl)silanes 1 $[Cl_3-nMenSiCHCl_2:$ n = 0 (a), n = 1(b), n = 2(c), n = 3(d)] and hydrogen chloride has been studied in the presence of copper catalyst using a stirred bed reactor equ ipped with a spiral band agitator at various temperatures from $240^{\circ}C$ to $340^{\circ}C.$ Tris(si-lyl) methanes with Si-H bonds, 3a-d $[Cl_3-nMenSiCH(SiHCl_2)_2]$, and 4a-d $[Cl_3-nMenSiCH(SiHCl_2)(SiCl_3)]$, were obtained as the major products and tris(silyl)methanes having no Si-H bond, 5a-d $[Cl_3-nMenSiCH(SiCl_3)_2]$, as the minor product along with byproducts of bis(chlorosilyl)methanes, derived from the reaction of silicon with chloromethylsilane formed by the decomposition of 1. In addition to those products, trichlorosilane and tetra-chlorosilane were produced by the reaction of elemental silicon with hydrogen chloride. The decomposition of 1 was suppressed and the production of polymeric carbosilanes reduced by adding hydrogen chloride to 1. Cad-mium was a good promoter for and the optimum temperature for this direct synthesis was $280^{\circ}C$.

• 전기화학회지
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• 제21권1호
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• pp.12-20
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• 2018

To solve low cycle efficiency of the zinc anode in Zn-air batteries by corrosion, this study examined the effects of Al as a cathodic protection additive to Zn. The Al-mixed Zn anodes were produced by mixing Zn and Al powder (1, 2, and 3 wt. %). To compare the effects of the Al additive, Si was selected under the same conditions. The morphology and elemental composition of the additives in the Zn were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, and inductively coupled plasma - mass spectrometry. The anti-corrosion effects of the Al and Si-mixed Zn anodes were examined by linear polarization. Cyclic voltammetry and charge-discharge tests were conducted to evaluate the electrochemical performance of the Al and Si-mixed Zn anodes. As a result, the Al-mixed Zn anodes showed highest corrosion resistance and cycling performance. Among these, the 2 wt.% Al-mixed Zn anodes exhibited best electrochemical performance.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.154-157
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• 2011

Hydrogenated silicon nitride deposited by LF-PECVD is commonly used for anti-reflection coating and passivation in silicon solar cell fabrication. The deposition of the optimized silicon nitride on the surface is elemental in crystalline silicon solar cell. In this work, the carrier lifetimes were measured while the thicknesses of $SiN_x$ were changed from 700 ${\AA}$ to 1150 ${\AA}$ with the gas flow of $SiH_4$ as 40 sccm and $NH_3$ as 120 sccm,. The carrier lifetime enhanced as the thickness of $SiN_x$ increased due to improved passivation effect. To study the characteristics of $SiN_x$ with various gas ratios, the gas flow of $NH_3$ was changed from 40 sccm to 200 sccm with intervals of 40 sccm. The thickness of $SiN_x$ was fixed as 1000 ${\AA}$ and the gas flow of $SiH_4$ as 40 sccm. The refractive index of SiNx and the carrier lifetime were measured before and after heat treating at $650^{\circ}C$ to investigate their change by the firing process in solar cell fabrication. The index of refraction of SiNx decreased as the gas ratios increased and the longest carrier lifetime was measured with the gas ratio $NH_3/SiH_4$ of 3.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.114-114
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• 2012

Even though graphene was introduced with a great hope to replace silicon in future, small (or zero) band gap and poor stability have become major challenges in graphene electronics. Especially, rectification and amplification function which are the elemental functions of silicon device, is very difficult to implement without a bandgap. However, the graphene can still be used in many other device applications if the merits of graphene are creatively utilized. For example, graphene can be applied to almost any kind of substrate. Its conductivity can be varied in some degree using electric field, charge dipole, attached molecules, and many other ways. Recently, graphene stacked with ferroelectric materials or piezoelectric materials has been actively studied for various device applications. In this talk, various device applications of graphene using hybrid stack or novel device structure will be introduced and their prospect will be discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.366.1-366.1
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• 2014

The rare-earth oxides M2O3 (M=La, Pr, Gd) are good insulators due to their large band gap (3.9eV for Pr2O3, 5.6eV for Gd2O3), they have high dielectric constants (Gd2O3 K=16, La2O3 K=27, Pr2O3 K=26-30) and, compared to ZrO2 and HfO2, they have higher thermodynamic stability on silicon making them very attractive materials for high-K dielectric applications. Another attractive feature of some rare-earth oxides is their relatively close lattice match to that of silicon, offering the possibility of epitaxial growth and eliminating problems related to grain boundaries in polycrystalline films. Metal-organic chemical vapor deposition (MOCVD) has been preferred to PVD methods because of the possibility of large area deposition, good composition control and excellent conformal step coverage. Herein we report on the synthesis of rare-earth oxide complexes with designed alkoxide and aminoalkoxide ligand. These novel complexes have been characterized by means of FT-IR, elemental analysis, and thermogravimetric analysis (TGA).

• 한국분말재료학회지
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• 제8권2호
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• pp.104-109
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• 2001

The semiconducting ${\beta}-FeSi_2$ compound has been recognized as a thermoelectric material with excel-lent oxidation resistance and stable characteristics at elevated temperature. In the present work, we applied mechanical alloying(MA) technique to produce ${\beta}-FeSi_2$ compound using a mixture of elemental iron and silicon powders. The mechanical alloying was carried out using a Fritsch P-5 planetary mill under Ar gas atmosphere. The MA powders were characterized by the X-ray diffraction with Cu-K $\alpha$ radiation, thermal analysis and scanning electron microscopy. The single ${\beta}-FeSi_2$ phase has been obtained by mechanical alloying of $Fe_{33}Si_{67}$ mixture powders for 120 hrs or for 70 hrs coupled with the subsequent heat treatment up to $700^{\circ}C$. The grain size of ${\beta}-FeSi_2$ powders analyzed by Hall plot method was 44nm.