• 한국전기전자재료학회논문지
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• 제27권11호
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• pp.730-735
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• 2014

In this study, the temperature characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film which is degradated at the $120^{\circ}C{\sim}200^{\circ}C$ temperature range in the oven for 10 hours has been measured in through the applied frequency range of 0.1 kHz~4,800 kHz at temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Also, in the same conditions, the frequency characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film has been measured in through the applied temperature range of $30^{\circ}C{\sim}70^{\circ}C$ on setting frequency of 0.1 kHz, 1 kHz, 10 kHz, 100 kHz. The results of this study are as follows. When the frequency range of 0.1 kHz~4,800 kHz applied to the sample of Teflon film, the electrostatic capacity has been measured at the temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Through this measurement, it found that the electrostatic capacity decreased with increasing temperature. Regarding this result, may be it is because the electromagnetic coupling is degraded by thermal degradation. When the sample of Teflon film heated at $280^{\circ}C$ for 10 hours in oven, the dielectric loss has changed from unstable status to stabilizing status with increasing the degradation temperature in the $120^{\circ}C$, $160^{\circ}C$, $200^{\circ}C$ range. In this measurement, the two spectrums of dielectric loss appeared. It considers that this spectrum of dielectric loss appeared in 300 Hz is caused by the molecular motion of the C-F or OH group. Through this study, It found that the electrostatic capacity decreased with increasing frequency and temperature, and there is no change in dielectric loss, although the frequency increases.

• Journal of Biosystems Engineering
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• 제21권4호
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• pp.456-466
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• 1996

Electrostatic spraying is needed for today's sustainable farming. An electrostatic spraying nozzle was developed and its spraying performance was evaluated. High voltages of 15㎸, 20㎸, and 25㎸ were supplied for the electrostatic electrode. Artificial and real apple targets were used for the spraying experiments. Insulated material was used around the electrode to protect the loss of electrostatic effect. Three angles (0, 45, 90 degree) of spraying direction were used for the spraying test. The performance of electrostatic spraying was improved from 204.5% upto 429.2% on the apple targets.

• 한국전기전자재료학회논문지
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• 제28권7호
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• pp.456-461
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• 2015

In this study, the frequency properties of electrostatic capacity and dielectric loss for the samples with different types of filler has been measured in through the applied frequency range of 7 kHz ~3,000 kHz at temperature of $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$, $170^{\circ}C$. The results of this study are as follows. When the sample is degradated at the temperature of $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$, $170^{\circ}C$ and the frequency range of 7 kHz ~3,000 kHz is applied, It found that the electrostatic capacity of the sample with Polyimide film is larger than the sample with Grass fiber. It found that the dielectric loss for the sample with Polyimide film is larger than the sample with Grass fiber with increasing frequency and temperature in the $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$, $170^{\circ}C$ range. Also, the dielectric loss decreased with increasing frequency. In case of the sample with Polyimide film, It found that the electrostatic capacity decreased with increasing temperature, and the dielectric loss gradually decreased with increasing frequency.

• 한국환경보건학회지
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• 제24권2호
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• pp.145-150
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• 1998

This study was carried out to investigate the loss amount of collection at the different of precipitatation time, high voltage and gas speed. This work has focused on the dependence of the collection efficiency in the collector zone with gas speed and high voltage. This advanced Model is developed by research of the different parameter as the conventionnal modem of study. In order to investigate collection efficiency of electrostatic precipitator, the loss amount of knocking was measured with Monitek-Treubung and the particle size was analyzed by He-Ne laser diffraction spectroscopy.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.835-840
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• 2016

In this study, the electrostatic capacity and dielectric loss tangent for $20{\mu}m$ thick thermal conductivity silicone rubber which is heated at 80 degrees for 8 hours has been measured at temperature of $30^{\circ}C{\sim}170^{\circ}C$, frequency of 0.1~1 MHz. The results of degradation evaluation by this study are as follows. In low frequency, it found that the electrostatic capacity decreased with increasing temperature. On the other hand, it confirmed that the range of the electrostatic capacity narrowed with increasing frequency. It confirmed that there are the carboxylic acid structure and C-O bonding at range of wave number 1,000cm-1 to 1,300cm-1.

• ETRI Journal
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• 제30권6호
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• pp.833-843
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• 2008

The effect of forward and reverse electrostatic discharge (ESD) on the electro-optical characteristics of oxide vertical-cavity surface-emitting lasers is investigated using a human body model for the purpose of understanding degradation behavior. Forward ESD-induced degradation is complicated, showing three degradation phases depending on ESD voltage, while reverse ESD-induced degradation is relatively simple, exhibiting two phases of degradation divided by a sudden distinctive change in electro-optical characteristics. We demonstrate that the increase in the threshold current is mainly due to the increase in leakage current, nonradiative recombination current, and optical loss. The decrease in the slope efficiency is mainly due to the increase in optical loss.

• 한국전기전자재료학회논문지
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• 제26권9호
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• pp.656-661
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• 2013

In this study, the moisture content, charge discharge current, electrostatic capacity and dielectric loss tangent are measured for the specimen of bisphenol type epoxy resin which is mixed with squared amorphous silica filler and dipped in hot water of $50^{\circ}C$ for 169 days. The results of this study are listed below. The longer of deposition day, the charge and discharge current was increased. It is considered that the reason is because there was water attack through the squared silica surface. The longer of deposition day, the absorption rate of all specimens was increased. It found that the absorption rate reached saturated state after 100 days. The higher frequency and the longer of deposition day, the $tan{\delta}$ was decreased. Also, It found that the $tan{\delta}$ and electrostatic capacity of the specimen which is mixed with squared filler are greater.

• 한국안전학회지
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• 제15권4호
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• pp.62-68
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• 2000

Static electricity in electronics manufacturing plants causes the economic loss, yet it is one of the least understood and least recognized effects haunting the industry today. Today's challenge in semiconductor devices is to achieve greater functional density pattern and to miniaturize electronic systems of being more fragile by electrostatic discharges(ESD) phenomena. As the use of automatic handling equipment for static-sensitive semiconductor components is rapidly increased, most manufacturers need to be more alert to the problem of ESD. One of the most common causes of electrostatic damage is the direct transfer of electrostatic charge from the human body or a charged material to the static-sensitive devices. To evaluate the ESD hazards by charged human body and devices, in this paper, characteristics of electrostatic attenuation in domestic semiconductor devices is investigated and the voltage to cause electronic component failures is investigated by field-induced charged device model(FCDM) tester. The FCDM simulator provides a fast and inexpensive test that faithfully represents ESD hazards in plants. Also the results obtained in this paper can be used for the prevention of semiconductor failure from ESD hazards.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권12호
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• pp.639-647
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• 2001

We present an integrated optical microswitch, composed of silicon waveguides, gold-coaled silicon micromirrors, and electrostatic contact actuators, for applications to the optical signal transceivers. For a low switching voltage, we modify the conventional curled electrode microactuator into a electrostatic microactuator with touch-down beams. We fabricate the silicon waveguides and the electrostatically actuated micromirrors using the ICP etching process of SOI wafers. We observe the single mode wave propagation through the silicon waveguide with the measured micromirror loss of $4.18\pm0.25dB$. We analyze major source of the micromirror loss, thereby presenting guidelines for low-loss micromirror designs. From the fabricated microswitch, we measure the switching voltage of 31.74V at the resonant frequency of 6.89kHz. Compared to the conventional microactuator, the present contact microactuator achieves 77.4% reduction of the switching voltage. We also discuss a feasible method to reduce the switching voltage to 10V level by using the electrode insulation layers having the residual stress less than 30MPa.

• 한국전기전자재료학회논문지
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• 제28권11호
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• pp.721-726
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• 2015

In this study, the properties of C-V degradation for thermal conductivity silicone rubber sample which is attached by copper-copper, copper-aluminum, aluminum-aluminum on upper-side and under-side has been measured at temperature of $80^{\circ}C{\sim}140^{\circ}C$. The results of this study are as follows. In case the frequency is increased, it found that the electrostatic capacity increased with increasing temperature to $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$ regardless of kind of electrode. It found that the electrostatic capacity increased with becoming high temperature range of frequency regardless of kind of electrode. This result is considered to be caused by thermal absorption on the thermal conductivity silicone rubber sample. It found that the electrostatic capacity decreased with increasing temperature and frequency. This result is considered to be caused by molecular motion of C-F radical or OH radical.