• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.6
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• pp.454-464
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• 2023

This paper proposes a low-power 8-bit asynchronous SAR ADC with a sampling rate of 1 MS/s for sensor node applications. The ADC uses bootstrapped switches to improve linearity and applies a VCM-based CDAC switching technique to reduce the power consumption and area of the DAC. Conventional synchronous SAR ADCs that operate in synchronization with an external clock suffer from high power consumption due to the use of a clock faster than the sampling rate, which can be overcome by using an asynchronous SAR ADC structure that handles internal comparisons in an asynchronous manner. In addition, the SAR logic is designed using dynamic logic circuits to reduce the large digital power consumption that occurs in low resolution ADC designs. The proposed ADC was simulated in a 180-nm CMOS process, and at a 1.8 V supply voltage and a sampling rate of 1 MS/s, it consumed 46.06 𝜇W of power, achieved an SNDR of 49.76 dB and an ENOB of 7.9738 bits, and obtained a FoM of 183.2 fJ/conv-step. The simulated DNL and INL are +0.186/-0.157 LSB and +0.111/-0.169 LSB.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.17 no.1
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• pp.31-37
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• 2024

In this study, we propose a machine vision-based pedestrian signal detection algorithm that operates efficiently even in computing resource-constrained environments. This algorithm demonstrates high efficiency within limited resources and is designed to minimize the impact of ambient lighting by sequentially applying HSV color space-based image processing, binarization, morphological operations, labeling, and other steps to address issues such as light glare. Particularly, this algorithm is structured in a relatively simple form to ensure smooth operation within embedded system environments, considering the limitations of computing resources. Consequently, it possesses a structure that operates reliably even in environments with low computing resources. Moreover, the proposed pedestrian signal system not only includes pedestrian signal detection capabilities but also incorporates IoT functionality, allowing wireless integration with a web server. This integration enables users to conveniently monitor and control the status of the signal system through the web server. Additionally, successful implementation has been achieved for effectively controlling 50W LED pedestrian signals. This proposed system aims to provide a rapid and efficient pedestrian signal detection and control system within resource-constrained environments, contemplating its potential applicability in real-world road scenarios. Anticipated contributions include fostering the establishment of safer and more intelligent traffic systems.

• Journal of IKEEE
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• v.28 no.1
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• pp.97-103
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• 2024

Some drugs can offer far better medical effectiveness as it is injected through the intradermal layer of the skin, known as a needle-free injection. However, conventional needle-free devices might deliver a relatively large amount of drug in a just single spot of skin, splitting open the tissue layer structure, which might cause bruising and bleeding. By injecting the small volume with a fast repetition rate in a large surface area of skin, the patient may get much fewer injuries and pain. To achieve that specification, the driving force must be instantaneous and short-pulsed. Such a form of an injection device has been developed but the efficacy of those devices has been rarely examined. Therefore, this study developed the laser-induced microjet device that ejects microjet whose speed is ~310 m/s, during the 400~800 ㎲ of pulse time. The device can eject ~1 µL of the drug at the rate at which each shot repeated 10 shots per second. Using this specification, we evaluated the efficacy of drug injection onto mouse models. After injecting the insulin solution into the mouse model, the blood insulin level is detected, resulting in 20 % of blood insulin level with the ordinary needle syringe injection method.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.17 no.4
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• pp.205-212
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• 2024

This study developed a deep learning model that distinguishes the front (with garnish) and the back (without garnish) surface of the dried semi-finished product (dried bukak) for screening operation before transfter the dried bukak to oil heater using robot's vacuum gripper. For deep learning model training and verification, RGB images for the front and back surfaces of 400 dry bukak that treated by data preproccessing were obtained. YOLO-v5 was used as a base structure of deep learning model. The area, surface information labeling, and data augmentation techniques were applied from the acquired image. Parameters including mAP, mIoU, accumulation, recall, decision, and F1-score were selected to evaluate the performance of the developed YOLO-v5 deep learning model-based surface detection model. The mAP and mIoU on the front surface were 0.98 and 0.96, respectively, and on the back surface, they were 1.00 and 0.95, respectively. The results of binary classification for the two front and back classes were average 98.5%, recall 98.3%, decision 98.6%, and F1-score 98.4%. As a result, the developed model can classify the surface information of the dried bukak using RGB images, and it can be used to develop a robot-automated system for the surface detection process of the dried bukak before deep frying.

• Journal of Sensor Science and Technology
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• v.33 no.5
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• pp.310-317
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• 2024

Formaldehyde (HCHO) is a major primary indoor air pollutant with various adverse effects on the human body, includingsuch as sick building syndrome, lung cancer, and nasal cancer. Therefore, gas sensors for effective HCHO detection detecting HCHO are crucial for maintaining a healthy indoor environments, and research is being conducted to develop high-performance sensors for this purpose. AnOne of the effective methods for enhancing the to enhance sensing properties is involves modifying the p-n heterojunction structure, which improves sensing through via electronic sensitization based on the expanded depletion region and chemical sensitization that dissociates specific gases. In this studyHerein, weWe fabricated NiO-decorated In₂O₃ NRs using an e-beam evaporator based on the glancing angle deposition technique by optimizing the NiO thickness (0, 1, 2, and 3 nm). When exposed to 50 ppm HCHO, NiO-decorated In₂O₃ NRs showed a 3.91%-fold enhancement in the gas response (Ra/Rg-1= 23.9) and a 41.47% faster response time (40.7 s) than-compared to bare In₂O₃ NRs with an extremely low theoretical detection limit of ≈approximately 9.3 ppb.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.79-84
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• 2017

The solar cells should be protected from the moisture and oxygen in order to sustain the properties and reliability of the devices. In this research, we prepared the protection films on the flexible plastic substrates by spray coating method using organic-inorganic hybrid solutions. The protection characteristics were studied depending on the various process conditions (nozzle distance, thicknesses of the coatings, film structures). The organic-inorganic solutions for the protection film layer were synthesized by addition of $Al_2O_3$ ($P.S+Al_2O_3$) and $SiO_2$ ($P.S+SiO_2$) nano-powders into PVA (polyvinyl alcohol) and SA (sodium alginate) (P.S) organic solution. The optical transmittances of the protection film with the thicknesses of $5{\mu}m$ showed 91%. The optical transmittance decreased from 81.6% to 73.6% with the film thickness increased from $78{\mu}m$ to $178{\mu}m$. In addition, the protective films were prepared on the PEN (polyethylene naphthalate), PC (polycarbonate) single plastic substrates as well as the Acrylate film coated on PC substrate (Acrylate film/PC double layer), and $Al_2O_3$ film coated on PEN substrate ($Al_2O_3$ film/PEN double layer) using the $P.S+Al_2O_3$ organic-inorganic hybrid solutions. The optimum protection film structure was studied by means of the measurements of water vapor transmittance rate (WVTR) and surface morphology. The protective film on PEN/$Al_2O_3$ double layer substrate showed the best water protective property, indicating the WVTR value of $0.004gm/m^2-day$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• Korean Security Journal
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• no.41
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• pp.37-66
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• 2014

In recent years, with the development of computers and electronics, electronics and communication technology in a growing and each part is dependent on the cross-referencing makes all electronic equipment is obsolete due to direct or indirect damage EMP. Korea and the impending standoff North Korea has a considerable level of technologies related to the EMP, EMP weapons you already have or in a few years, the development of EMP weapons will complete. North Korea launched a long-range missile and conducted a nuclear test on several occasions immediately after, when I saw the high-altitude nuclear blackmail has been strengthening the outright offensive nuclear EMP attacks at any time and practical significance for the EMP will need offensive skills would improve. At this point you can predict the damage situation of Korea's security reality that satisfy the need, more than anything else to build a protective system of the EMP. The scale of the damage that unforeseen but significant military damage and socio-economic damage and fatalities when I looked into the situation which started out as a satellite communications systems and equipment to attack military and security systems and transportation, finance, national emergency system, such as the damage elsewhere. In General, there is no direct casualties reported, but EMP medical devices that rely on lethal damage to people who can show up. In addition, the State power system failure due to a power supply interruption would not have thought the damage would bring State highly dependent on domestic power generation of nuclear plants is a serious nuclear power plant accident in the event of a blackout phenomenon can lead to the plant's internal problems should see a forecast. First of all, a special expert Committee of the EMP, the demand for protective facilities and equipment and conduct an investigation, he takes fits into your budget is under strict criteria by configuring the contractors should be sifting through. He then created the Agency for verification of performance EMP protection after you have verified the performance of maintenance, maintenance, safety and security management, design and construction company organized and systematic process Guard facilities or secret communications equipment and perfect for the EMP, such as protective equipment maneuver system should take.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.6-13
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• 2009

For X-band phased array systems, a power amplifier, a 6-bit phase shifter, a 6-bit digital attenuator, and a SPDT transmit/receive (T/R) switch are fabricated and measured. All circuits are demonstrated by using CMOS 0.18 um technology. The power amplifier has 2-stage differential and cascade structures. It provides 1-dB gain-compressed output power ($P_{1dB}$) of 20 dBm and power-added-efficiency (PAE) of 19 % at 8-11 GHz frequencies. The 6-bit phase shifter utilizes embedded switched filter structure which consists of nMOS transistors as a switch and meandered microstrip lines for desired inductances. It has $360^{\circ}$ phase-control range and $5.6^{\circ}$ phase resolution. At 8-11 GHz frequencies, it has RMS phase and amplitude errors are below $5^{\circ}$ and 0.8 dB, and insertion loss of $-15.7\;{\pm}\;1,1\;dB$. The 6-bit digital attenuator is comprised of embedded switched Pi-and T-type attenuators resistive networks and nMOS switches and employes compensation circuits for low insertion phase variation. It has max. attenuation of 31.5 dB and 0.5 dB amplitude resolution. Its RMS amplitude and phase errors are below 0.4 dB and $2^{\circ}$ at 8-11 GHz frequencies, and insertion loss is $-10.5\;{\pm}\;0.8\;dB$. The SPDT T/R switch has series and shunt transistor pairs on transmit and receive path, and only one inductance to reduce chip area. It shows insertion loss of -1.5 dB, return loss below -15 dB, and isolation about -30 dB. The fabricated chip areas are $1.28\;mm^2$, $1.9mm^2$, $0.34\;mm^2$, $0.02mm^2$, respectively.

• Korea Trade Review
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• v.42 no.5
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• pp.137-159
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• 2017

This study divides manufacturing in 18 countries including Korea, China, Japan and OECD countries into 11 areas and estimates and compares the technological efficiency of each industry. The traditional view of productivity is to increase production capacity through technological innovation or process innovation, but it is also influenced by the technological efficiency of production process. A Stochastic Frontier Production Model (SFM) is a representative method for estimating the technical efficiency of such production. First, as a result of estimating the production function by setting the output variable as total output or value-added, in both cases, the output increased significantly in all manufacturing sectors as inputs of labor, capital, and intermediate increased. On the other hand, R&D investment has a large impact on output in chemical, electronics, and machinery industries. Next, as a result of estimating the technological efficiency through the production function, when the total output is set as the output variable, the overall average of each sector is 0.8 or more, showing mostly high efficiency. However, when value-added was set, Japan had the highest level in most manufacturing sectors, while other countries were lower than the efficiency of the total output. Comparing the three countries of Korea, China and Japan, Japan showed the highest efficiency in most manufacturing sectors, and Korea was about half or one third of Japan and China was lower than Korea. However, in the food and electronics sectors, China is higher than Korea, indicating that China's production efficiency has greatly improved. As such, Korea is not able to narrow its gap with Japan relatively faster than China's rapid growth. Therefore, various policy supports are needed to promote technology development. In addition, in order to improve manufacturing productivity, it is necessary to shift to an economic structure that can raise technological efficiency as well as technology development.