• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.478-483
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• 2014

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

• 전자공학회논문지S
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• 제36S권2호
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• pp.9-18
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• 1999

본 논문에서는 시분할-파장분할 방식이 혼합된 라우팅 구조를 가지는 대용량 광ATM 스위치 구조를 제안하였다. 제안된 구조는 셀의 경로배정 과정에서 겪게되는 광 파워의 손실 및 시스템 구성시 요구되는 하드웨어를 줄일 수 있을 뿐만 아니라 수동소자를 사용함으로써 전기적 제어부분의 복합성을 피할 수 있다. 또한 제안된 스위치는 확장이 용이하도록 설계되어졌기 때문에 처리용량에 있어서 미래의 대욜양 광 교환 시스템에 적합한 구조라고 할 수 있다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.895-898
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• 2004

We propose configurations for a transflective in-plane switching (IPS) cell using muti-domain structures. Usually, the cell configurations for a transflective liquid crystal(LC) cell have a complicated structure, because retardation change of transmissive part and reflective part are not same. The transflective LC cell should have two configurations for each part, such as a multi-cell gap structure. With the ion-beam alignment and the horizontal switching LC cell, a simple structure for a transflective LC cell is proposed. The configuration only adopts one cell gap structure, which may help the enhancement of a yield. Their original optical properties in conventional transmissive and reflective type IPS liquid crystal dispaly(LCD) are kept, it shows the wide-viewing angle and the good wavelength dispersion characteristics.

• ETRI Journal
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• 제44권1호
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• pp.147-154
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• 2022

We demonstrate a new double-layer structure for stretchable interconnects, where the top surface of a serpentine polyimide support is coated with a thin eutectic gallium-indium liquid metal layer. Because the liquid metal layer is constantly fixed on the solid serpentine body in this liquid-on-solid structure, the overall stretching is accomplished by widening the solid frame itself, with little variation in the total length and cross-sectional area of the current path. Therefore, we can achieve both invariant resistance and infinite fatigue life by combining the stretchable configuration of the underlying body with the freely deformable nature of the top liquid conductor. Further, we fabricated various types of double-layer interconnects as narrow as 10 ㎛ using the roll-painting and lift-off patterning technique based on conventional photolithography and quantitatively validated their beneficial properties. The new interconnecting structure is expected to be widely used in applications requiring high-performance and high-density stretchable circuits owing to its superior reliability and capability to be monolithically integrated with thin-film devices.

• Journal of Power Electronics
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• 제15권4호
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• pp.951-963
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• 2015

In this paper, a new symmetric multilevel inverter is proposed. A simple structure for the cascaded multilevel inverter topology is also proposed, which produces a high number of levels with the application of few power electronic devices. The symmetric multilevel inverter can generate 2n+1 levels with a reduced number of power switches. The basic unit is composed of a single and double source unit (SDS-unit). The application of this SDS-unit is for reducing the number of power electronic components like insulated gate bipolar transistors, freewheeling diodes, gate driver circuits, dc voltage sources, and blocked voltages by switches. Various new algorithms are recommended to determine the magnitude of dc sources in a cascaded structure. Furthermore, the proposed topology is optimized for different goals. The proposed cascaded structure is compared with other similar topologies. For verifying the performance of the proposed basic symmetric and cascaded structure, results from a computer-based MATLAB/Simulink simulation and from experimental hardware are also discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.551-554
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• 2003

A novel geometric solution for uniform bend transition in a pi cell has proposed. In order to obtain the uniform bend transition, we applied hybrid domain structure to the edge of a LC cell by using ion-beam alignment method. As a result, we confirmed that the uniform bend transition has arisen from the edge to the center. From the proposed structure, we expect that the reliable and uniform bend transition can be achieved in the pi cell.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.123-126
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• 2007

In this study, a high luminous efficacy AC-PDP panel with long discharge gap and grooved dielectric layer has been studied. By applying this high efficacy concept and optimized driving waveform featuring negative biased sustain, ${\sim}2.6lm/W$ of luminous efficacy was achieved in 42- inch HD panel. Modified fabricating process and new discharge cell structure were investigated to obtain improved uniformity and operating characteristics.

• 센서학회지
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• 제22권4호
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• pp.256-261
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• 2013

This paper presents an extension of the dynamic range in a complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) using a stacked photodiode and feedback structure. The proposed APS is composed of two additional MOSFETs and stacked P+/N-well/P-sub photodiodes as compared with a conventional APS. Using the proposed technique, the sensor can improve the spectral response and dynamic range. The spectral response is improved using an additional stacked P+/N-well photodiode, and the dynamic range is increased using the feedback structure. Although the size of the pixel is slightly larger than that of a conventional three-transistor APS, control of the dynamic range is much easier than that of the conventional methods using the feedback structure. The simulation and measurement results for the proposed APS demonstrate a wide dynamic range feature. The maximum dynamic range of the proposed sensor is greater than 103 dB. The designed circuit is fabricated by the $0.35-{\mu}m$ 2-poly 4-metal standard CMOS process, and its characteristics are evaluated.

• ETRI Journal
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• 제45권6호
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• pp.1056-1064
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• 2023

The optical properties of the materials composing organic light-emitting diodes (OLEDs) are considered when designing the optical structure of OLEDs. Optical design is related to the optical properties, such as the efficiency, emission spectra, and color coordinates of OLED devices because of the microcavity effect in top-emitting OLEDs. In this study, the properties of top-emitting blue OLEDs were optimized by adjusting the thicknesses of the thin metal layer and capping layer (CPL). Deep blue emission was achieved in an OLED structure with a second cavity length, even when the transmittance of the thin metal layer was high. The thin metal film thickness ranges applicable to OLEDs with a second microcavity structure are wide. Instead, the thickness of the thin metal layer determines the optimized thickness of the CPL for high efficiency. A thinner metal layer means that higher efficiency can be obtained in OLED devices with a second microcavity structure. In addition, OLEDs with a thinner metal layer showed less color change as a function of the viewing angle.

• 전자공학회논문지B
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• 제31B권5호
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• pp.81-87
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• 1994

This paper proposes a divider structure that combines a carry-propagation-free division algorithm using RSD number system and a self-timed ring structure. The self-timed ring structure enables the divider to compute at a speed comparable to that of combinational array dividers with less silicon area. By exploiting the carry-propagation-free division algorithm, we can achieve further reduction of silicon area and computation time. The algorithm and structure of the proposed divider have been successfully verified through VHDL modeling and simulation. Preliminary experimental results show the effectiveness of the algorithm and structure.