• Title/Summary/Keyword: Electronics structure

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Single Isolation Structure of High Aperture Ratio for a PMOLED

  • Youn, Suk-Won;Byun, Byung-Hyun;Choi, Kyung-Hee;Yi, Seung-Jun;Choi, Do-Hyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1028-1029
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    • 2006
  • We have developed a self-aligned single isolation structure (SIS) and an asymmetric single isolation structure with an image reversal photoresist to increase the aperture ratio in a passive matrix organic light emitting display (PMOLED). Compared to the conventional structure, the fabrication process is reduced by about 17% and the aperture ratio is enlarged over 4%.

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High-transmittance Multi-domain Vertical Alignment Liquid Crystal Device with Protrusion Structure

  • Kim, Ki-Han;Jeon, Eun-Young;Park, Byung Wok;Choi, Sun-Wook;Song, Dong Han;Kim, Hoon;Shin, Ki-Chul;Kim, Hee Seop;Yoon, Tae-Hoon
    • Journal of the Optical Society of Korea
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    • v.16 no.2
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    • pp.166-169
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    • 2012
  • We propose a high-transmittance multi-domain vertical alignment liquid crystal device with a protrusion structure. Disclination lines, which inevitably appear at the boundaries of domains in a multi-domain structure, can be reduced by adding a protrusion structure on the top substrate. The transmittance was improved by 11% using the proposed structure with no change of either the dark state or the operating voltage.

Development of High Aperture Ratio 2.1” QVGA LTPS (Low Temperature Poly Si) LCD Using SLS (Sequential Lateral Solidification) Technology

  • Kang, Myung-Koo;Lee, Joong-Sun;Park, Jong-Hwa;Zhang, Lintao;Joo, Seung-Yong;Kim, Chul-Ho;Kim, Il-Kon;Kim, Sung-Ho;Park, Kyung-Soon;Yoo, Chun-Ki;Kim, Chi-Woo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1033-1034
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    • 2005
  • High resolution 2.1” QVGA LTPS LCD (190ppi) having high aperture ratio of 65% could be successfully developed using state-of-the-art SLS technology and active/gate storage structure. Cost effective P-MOS 6-Mask structure was used. Full gate and transmission gate circuits are integrated in the panel. The high aperture ratio was obtained by using active/gate capacitance structure, which can reduce storage capacitance area. The aperture ratio was increased to 65% from 49% of conventional gate/data capacitance structure. The brightness was increased from 180cd to 270cd without any degradation of optical properties such as contrast ratio, flicker or crosstalk.

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Advanced Pixel Structure for Higher Aperture Ratio in TFT-LCD

  • Kim, Jong-Hoon;Noh, Sang-Yong;Kang, Shin-Tack;Lee, Jong-Hwan;Choi, Kwang-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.17-19
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    • 2008
  • An advanced TFT-LCD structure was proposed to increase aperture ratio (AR). In this structure, metal layers formed below the data lines are used as light-blocking layers, achieving higher AR ratio than that of a conventional structure. Since average misalignment between the metal light-blocking layers and pixel electrodes is smaller than that of black matrixes on color filter glass, substantially less light-blocking areas are needed to achieve misalignment margin. The AR of the LCD panel fabricated by using proposed structure was enhanced by 18.7 % over that of the conventionally structured panel.

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An improved electrode structure of the Patterned Vertical Alignment Liquid Crystal Cell for high optical property

  • Choi, Yong-Hyun;Son, Jung-Hee;Yang, Jin-Seok;Ji, Seung-Hoon;Lee, Gi-Dong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.502-505
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    • 2007
  • In this paper we propose a novel electrode structure for high transmittance in the Patterned Vertical Alignment (PVA) LC cell. Normally, the transmittance of PVA LC cell is depended on the shape of the electrode and cell gap. We studied the area decreasing the transmittance through the electrode structure for wide viewing angle and proposed new electrode design to change LC director configuration in the area. We use the 'TechWiz LCD' for calculation of the director configuration and optical characteristics. We show the comparison of the calculated optical transmittance between the conventional PVA mode and the proposed PVA mode. From the results, we confirm that the optical transmittance of the proposed structure of the PVA cell becomes higher.

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Integer Inverse Transform Structure Based on Matrix for VP9 Decoder (VP9 디코더에 대한 행렬 기반의 정수형 역변환 구조)

  • Lee, Tea-Hee;Hwang, Tae-Ho;Kim, Byung-Soo;Kim, Dong-Sun
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.4
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    • pp.106-114
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    • 2016
  • In this paper, we propose an efficient integer inverse transform structure for vp9 decoder. The proposed structure is a hardware structure which is easy to control and requires less hardware resources, and shares algorithms for realizing entire DCT(Discrete Cosine Transform), ADST(Asymmetric Discrete Sine Transform) and WHT(Walsh-Hadamard Transform) in vp9. The integer inverse transform for vp9 google model has a fast structure, named butterfly structure. The integer inverse transform for google C model, unlike universal fast structure, takes a constant rounding shift operator on each stage and includes an asymmetrical sine transform structure. Thus, the proposed structure approximates matrix coefficient values for all transform mode and is used to matrix operation method. With the proposed structure, shared operations for all inverse transform algorithm modes can be possible with reduced number of multipliers compared to the butterfly structure, which in turn manages the hardware resources more efficiently.

Design of ESD Protection Circuit with improved Snapback characteristics Using Stack Structure (스텍 구조를 이용한 향상된 스냅백 특성을 갖는 ESD 보호회로 설계)

  • Song, Bo-Bae;Lee, Jea-Hack;Kim, Byung-Soo;Kim, Dong-Sun;Hwang, Tae-Ho
    • Journal of IKEEE
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    • v.25 no.2
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    • pp.280-284
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    • 2021
  • In this paper, a new ESD protection circuit is proposed to improve the snapback characteristics. The proposed a new structure ESD protection circuit applying the conventional SCR structural change and stack structure. The electrical characteristics of the structure using penta-well and double trigger were analyzed, and the trigger voltage and holding voltage were improved by applying the stack structure. The electron current and total current flow were analyzed through the TCAD simulation. The characteristics of the latch-up immunity and excellent snapback characteristics were confirmed. The electrical characteristics of the proposed ESD protection circuit were analyzed through HBM modeling after forming a structure through TCAD simulator.

In-plane Switching Liquid Crystal Cell with a Mixed Bent Electrode Structure for Fast Response Time

  • Ko, Tae-Woon;Kim, Jae-Chang;Lee, Joun-Ho;Choi, Hyun-Chul;Ji, Seung-Hoon;Choi, Jung-Min;Lee, Chul-Hun;Lee, Gi-Dong
    • Journal of Information Display
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    • v.9 no.3
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    • pp.12-15
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    • 2008
  • A bent electrode structure is proposed in the super in-plane switching (S-IPS) liquid crystal (LC), as it can reduce the response time without loss of transmittance in the bright state. The electrode angle in each position of the bent electrode was optimized to simultaneously achieve high transmittance and fast response time. The electro-optical characteristics of the proposed LC cell structure were experimentally compared with those of the conventional cell. It was observed that the response time became over 8% shorter without loss of transmittance when the proposed bent structure was applied.

A BJT Structure with High-Matching Property Fabricated Using CMOS Technology (CMOS 기술을 기반으로 제작된 정합 특성이 우수한 BJT 구조)

  • Jung, Yi-Jung;Kwon, Hyuk-Min;Kwon, Sung-Kyu;Jang, Jae-Hyung;Kwak, Ho-Young;Lee, Hi-Deok
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.5
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    • pp.16-21
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    • 2012
  • For CMOS based bipolar junction transistor (BJT), a novel BJT structure which has higher matching property than conventional BJT structure was proposed and analyzed. The proposed structure shows a slight decrease of collector current density, $J_C$ about 0.361% and an increase of current gain, ${\beta}$ about 0.166% compared with the conventional structure. However, the proposed structure shows a decrease of area about 10% the improvement of matching characteristics of collector current ($A_{IC}$) and current gain ($A_{\beta}$) about 45.74% and 38.73% respectively. The improved matching characteristic of proposed structure is believed to be mainly due to the decreased distance between two emitters of pair BJTs, which results in the decreased effect of deep n-well of which resistance has the higher standard deviation than the other resistances.

Performance Analysis of GNSS Navigation Messages in the Structure Viewpoint

  • Noh, Jae Hee;Jo, Gwang Hee;Lee, Jang Yong;Lee, Sang Jeong
    • Journal of Positioning, Navigation, and Timing
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    • v.11 no.2
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    • pp.135-146
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    • 2022
  • In GNSS, the structure of the navigation message has been improved to increase the flexibility of data addition and transmission, and the robustness of message reception in a low SNR environment. GNSS signals currently being broadcast have a different message structure from each other, and the structure can be largely classified into the fixed structure, the packetized structure, and the packetized and fixed pattern structure. This paper analyzes the features of these three types of structures and compares the performance using the indicators. It can be seen that the performance after adopting the packetized structure is superior to those of other structures. In particular, there has been remarkable improvement in terms of the message management and transmission efficiency.