• Title/Summary/Keyword: Electronics Engineering

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ATM 망 구조

  • Jo, Dong-Ho;Choe, Yun-Seok;Kim, Tae-Gyu
    • The Magazine of the IEIE
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    • v.19 no.8
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    • pp.1-10
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    • 1992
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On-chip Inductor Modeling in Digital CMOS technology and Dual Band RF Receiver Design using Modeled Inductor

  • Han Dong Ok;Choi Seung Chul;Lim Ji Hoon;Choo Sung Joong;Shin Sang Chul;Lee Jun Jae;Shim SunIl;Park Jung Ho
    • Proceedings of the IEEK Conference
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    • 2004.08c
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    • pp.796-800
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    • 2004
  • The main research on this paper is to model on-chip inductor in digital CMOS technology by using the foundry parameters and the physical structure. The s-parameters of a spiral inductor are extracted from the modeled equivalent circuit and then compared to the results obtained from HFSS. The structure and material of the inductor used for modeling in this work is identical with those of the inductor fabricated by CMOS process. To show why the modeled inductor instead of ideal inductor should be used to design a RF system, we designed dual band RF front-end receiver and then compared the results between when using the ideal inductor and using the modeled inductor.

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Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor

  • Jang, Young In;Seo, Jae Hwa;Yoon, Young Jun;Eun, Hye Rim;Kwon, Ra Hee;Lee, Jung-Hee;Kwon, Hyuck-In;Kang, In Man
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.5
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    • pp.554-562
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    • 2015
  • This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width ($W_{fin}$) and the height of GaN layer ($H_{GaN}$) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/GaN FinFET.

Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors

  • Kim, Sung Yoon;Seo, Jae Hwa;Yoon, Young Jun;Yoo, Gwan Min;Kim, Young Jae;Eun, Hye Rim;Kang, Hye Su;Kim, Jungjoon;Cho, Seongjae;Lee, Jung-Hee;Kang, In Man
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.508-517
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    • 2014
  • We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulk-type fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width ($W_{fin}$) and height ($H_{fin}$) of the fin as well as the channel doping concentration ($N_{ch}$). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.

LC Aligning Capabilities of a Nematic Liquid Crystal on Homeotropic Polyimide Surface by New Ion-beam Irradiation

  • Ok, Chul-Ho;Kang, Dong-Hun;Lee, Kang-Min;Han, Jin-Woo;Kim, Byoung-Yong;Oh, Byeong-Yun;Kim, Young-Hwan;Hwang, Jeong-Yeon;Lee, Sang-Keuk;Han, Jeong-Min;Seo, Dae-Shik
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.6
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    • pp.265-267
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    • 2007
  • The liquid crystal(LC) aligning capabilities of a nematic liquid crystal(NLC) on a homeotropic polyimide(PI) surface using a new ion-beam method were studied. Exposure ion-beam of $45^{\circ}$ incidence angle shows a good LC alignment of the NLC on the homeotropic PI surface. Also, on the homeotropic PI surface, the tilt angle of the NLC by exposure ion-beam of $45^{\circ}$ incidence angle had a tendency to decrease as increased ion-beam energy density. And, on the homeotropic PI surface, the alignment character of the NLC with respect to ion-beam energy was good at 1500 eV. And we achieved satisfactory result for EO character.

A study on the performance improvement of the electronic ballasts for neon (네온용 전자식 안정기의 성능개선에 관한 연구)

  • Kim, Seung-Kee;Kim, Jang-Sung;Kim, Suk-Hyun;Lee, Sang-Yun;Yun, Dal-Hwan;Kim, Ki-Hwan;Song, Hyeon-Seon
    • Proceedings of the KIEE Conference
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    • 1997.07f
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    • pp.2066-2068
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    • 1997
  • 네온용 전자식 안정기(EBN)의 출력선간 전자파방해(EMI)로 인한 네온관간의 신호상쇠 현상을 방지하는 회로를 설계하였다. 특히 네온관이 가까이 위치할 때 전자파유도로 인하여 네온발광이 상쇄되는 원인을 방지함으로써 EBN의 성능이 개선되는 결과를 얻었다. 또한 유도전자파를 방지함으로써 인체에 유해한 전자파를 차단하는 효과도 얻었다.

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Novel Design Techniques for Transflective Liquid Crystal Displays

  • Kim, Jae-Chang;Jhun, Chul-Gyu;Park, Kyoung-Ho;Gwag, Jin-Seog;Lee, Seo-Hern;Lee, Gi-Dong;Yoon, Tae-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.283-287
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    • 2003
  • Novel design techniques of half switching method, double layer structure, and multidomain structure for transflective liquid crystal display modes are introduced. Design examples of these techniques which perform excellent display characteristics are described.

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A Novel Method for the Formation of Polymer Walls in Reflective LCD

  • Jeong, Dong-Chirl;Kim, Hae-Sung;Park, Won-Sang;Park, Kyoung-Ho;Han, Kwan-Young;Kim, Jae-Chang;Yoon, Tae-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.405-408
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    • 2002
  • In this paper, we propose a novel method to form polymer walls without accurate alignment of photomask. The method can be used to form polymer walls in reflective LCDs.

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Study of storyboard making system (드론 기반의 스토리보드 제작 시스템 연구)

  • Lee, Dong-Woo;Moon, Seong-Yeop;Kim, Jin-Sil;Kim, Ip-Su;Erdene, Zorigbold Munkh;Han, Se-Jin;Na, Jong-Hwa
    • Proceedings of the Korea Information Processing Society Conference
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    • 2016.10a
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    • pp.728-730
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    • 2016
  • 드론 기반의 항공촬영 기법을 영화제작에 적용토록 하기 위해 드론 기반의 스토리보드 제작 시스템을 제안한다. 제작 시스템은 항공촬영 수행 전, 비행 시뮬레이션을 수행하여, 다양한 스토리보드 세트를 수집한다. 감독은 스토리보드 세트 중 가장 적합한 스토리보드를 선택한다. 선택된 스토리보드에는 촬영 영상정보와 함께, 드론 제어정보들이 포함된다. 드론의 제어정보를 실제 촬영에서 사용하여, 정밀한 항공촬영을 지원할 수 있다.