• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.76-77
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• 2009

In this paper, We have studied Electron Transport Layer(ETL) in the New Organics applied to Red phosphorescent organic light-emitting devices. The structure of ITO/2-TNATA(15nm)/CBP;$Ir(piq)_3$/DPVBi(30nm)/New ETL(60nm)/LiF(0.5nm)/Al(100nm) has been used, measured changing doping concentration of EML. The results of OLED turn-on voltage at 2.2V, and Maximum Luminance at 2.8V was $1000cd/m^2$. This high luminance at low voltage results from a high electron. conduction of the new electron transport layer.

• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.268-273
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• 1997

In this paper the transient electron transport in GaAs bulk is simulated by using ensemble Monte Carlo method. To analyze the transient electron transport the 10000 electrons in the .GAMMA. valley are simulated simultaneously for 10 picoseconds. The electric field-velocity relation is obtained. The high impurity density reduces the negative differential resistance effect. The result of transient average velocity shows the electron velocity in the transient state is faster than that in the steady state. This transient velocity overshoot is caused by the intervalley scattering mechanism. And we confirmed the fact that the energy relaxation time is longer than the momentum relaxation time.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1341-1346
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• 2004

The OLED research is gone for two directions. One is material development research, and another one is structural improvement part. All two are thing to heighten luminescence efficiency of OLED. n other to improve luminescence efficiency of OLED Electron - hole pairs must consist much more in the device Their profiles are sensitive to mobility velocity of electrons and holes. In this paper, we demonstrate the difference of velocity between hole and electron by experiments, and compare with a data of simulation and experiment changing hole carrier transport layer thickness, so we get the optimal we improve luminescence efficiency. We suggest improving the efficiency of OLEDS would be to balance the injection of electrons and holes into light emission layer of the device. And, we improve understanding of the various luminescence efficiency through experiments and numerical analysis of luminescence efficiency in variable hole carrier transport layer's thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.43-43
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• 2010

HTS(High Temperature Superconductor) cable has a high possibility of practical use due to the possibility of low voltage and high capacity transmission caused by its lower power loss than copper cable. On the other hand, when fault current occurred, resistance increase caused by superconductivity loss, the amount of power supplies has diminished, furthermore, it's necessary to take the possible danger of damage to HITS cable into account. Therefore, an effective plan for dealing with the above problem is to link HITS cable to SFCL. In this study, we researched the possibilities of normal transport current as well as the safety of HITS cable by analyzing the properties of transport current in HITS cable connected with SFCL.

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.389-393
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• 2007

We fabricated field-effect transistor based carbon nanotubes(CNTs) directly grown by thermal chemical vapor deposition(CVD) and analyzed their performance. The Ethylene ($C_2H_4$), hydrogen($H_2$) and Argon(Ar) gases were used for the growth of CNTs at $700\;^{\circ}C$. The growth properties of CNTs on the device were analyzed by SEM and AFM. The electrical transport characteristics of CNT FET were investigated by I-V measurement. Transport through the nanotubes is dominated by holes at room temperature. By varying the gate voltage, we successfully modulated the conductance of FET device by more than 7 orders of magnitude.

• The Korean Journal of Ceramics
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• 제4권2호
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• pp.103-113
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• 1998

By using a gas-tight electrochemical cell, we can perform high-temperature coulometric titration and measure electronic transport properties to determine the elecronic defect structure of metal oxides. This technique reduces the time and expense required for conventional thermogravimetric measurements. The components of the gas-tight coulometric titration cell are an oxygen sensor, Pt/yttria stabilitized zirconia(YSZ)/Pt, and an encapsulated metal oxide sample. Based on cell design, both transport and thermodynamic measurements can be performed over a wide range of oxygen partial pressure ($pO_2=10^{-35}$ to 1 atm). This paper describes the high-temperature gas-tight electrochemical cells used to determine electronic defect structures and transport properties for pure and doped-oxide systems, such as YSZ, doped and pure ceria $(Ca-CeO_2 \;and\; CeO_2)$, copper oxides and copper-oxide-based ceramic superconductors, transition metal oxides, $SrFeCo_{0.5}O_x,\; and \;BaTiO_2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.174-177
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure Xe were calculated over the wide E/N range from 0.01 to 500 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of Xe molecular gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.182-185
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• 2001

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ and $D_L/{\mu}$, in pure Ne were calculated over the wide E/N range from 0.01 to 300 Td at 1 Torr by two-term approximation of the Boltzmann equation for determination of electron collision cross sections set and for quantitative characteristic analysis of Ne molecular gas.

• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.107-111
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• 2015

Our work is based on the development of a numerical model to develop a methodology for predicting the aging and breakdown in insulation due to the dynamics of space charge packets. The model of bipolar charge transports is proposed to simulate space charge dynamic for high DC voltage in law-density polyethylene (LDPE), taking into account the trapping and detrapping of recombination phenomena, this model has been developed and experimentally validation. Theoretical formulation of the physical problem is based on the Poisson, the continuity and the transport equations as well as on the appropriate models for injection. Numerical results provide temporal and local distributions of the electric field, the space charge density for the different kinds of charges, conduction and displacement current densities, and the external current.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.116-119
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• 1997

In this paper A double-layer organic electroluminescent(EL) device was fabricated using a TPD(N,N'-dipheny] -N,N'-bis(3-methylphenyl)-[1,1'-biphenyl]-4.4'-diamine: aromatic diamine), as a hole-transport material and tris (8-hydroxy quinolinate) aluminum(Alq$_3$) as a an emiting material and its performance characteristics were investigated. structure of devices is ITO/TPD/Alq$_3$/Al. we have fabricated hole transport layer of two types. Doping material of Hole Transport material is Poly(methyl methacrylate)(PMMA) and PEI(Poly-Ether-Imide). Carrier injection from the electrodes to the doped PMMA and PEI layer through the dopants and concomitant electroluminescence from Alq$_3$were observed. Green emission with luminance of 40cd/m$^2$was achieved at a drive voltage of 30V