Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A study on the transient electron transport in GaAs bulk

GaAs 벌크에서 전자의 과도 전송 특성

  • 임행삼 (홍익대학교 전자공학과) ;
  • 황의성 (홍익대학교 전자공학과) ;
  • 심재훈 (홍익대학교 전자공학과) ;
  • 이정일 (홍익대학교 전자공학과) ;
  • 홍순석 (홍익대학교 전자전산공학과)
  • Published : 1997.03.01
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Abstract

In this paper the transient electron transport in GaAs bulk is simulated by using ensemble Monte Carlo method. To analyze the transient electron transport the 10000 electrons in the .GAMMA. valley are simulated simultaneously for 10 picoseconds. The electric field-velocity relation is obtained. The high impurity density reduces the negative differential resistance effect. The result of transient average velocity shows the electron velocity in the transient state is faster than that in the steady state. This transient velocity overshoot is caused by the intervalley scattering mechanism. And we confirmed the fact that the energy relaxation time is longer than the momentum relaxation time.

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