• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.251-252
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• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.189-189
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• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• 한국결정성장학회지
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• 제21권5호
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• pp.199-204
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• 2011

존멜팅법을 이용해서 $(YSmNd)_{1.8}Ba_{2.4}Cu_{3.4}O_{7-x}$계 고온초전도체를 대기 중에서 용융성장실험을 하였다. 존멜팅법의 최적용융온도는 $1100^{\circ}C$였으며 성장속도는 3.5 mm/h 였다. 한 방향으로 용융성장 된 (YSN)1.8 초전도체는 XRD, 광학현미경, TEM을 이용하여 미세구조를 관찰하였으며 SQUID magnetometer와 직접전류수송법을 이용해 초전도특성을 평가하였다. 특히 용융성장 된 (YSN)1.8 초전도체의 광학현미경에 의한 미세구조 관측 결과 초전도상인 (YSN)123 matrix내에 비초전도상인 (YSN)211 inclusions이 균질하게 분포되어 있는 것이 관측되었다. 또한 용융성장 된 (YSN)1.8 초전도체는 90 K 이상의 임계온도 특성을 보였으며 액체질소 안에서 직접전류수송법으로 측정한 결과 수송전류 830 A에서 $3.93{\times}10^4$(A/$cm^2$)를 갖는 높은 임계전류밀도 특성을 보였다.

• 한국세라믹학회지
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• 제41권8호
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• pp.618-622
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• 2004

플로라이드, 설파이드 및 셀레나이드 유리에 각각 첨가된 홀뮴 이온의 $^{5}$ I$_{5}$ \$\longrightarrow$$^{5}$ I$_{7}$ 전자천이에 기인하는 1.6$\mu$m 형광의 여기 스펙트럼을 $^{5}$ I$_{5}$ 준위가 위치하는 ∼900nm 대역에서 측정하였다. $^{5}$ $F_{1}$ 준위로의 상향전이가 발생하는 특정 파장대역에서 1.6$\mu$m발광의 여기효율이 감소하는 현상이 플로라이드 및 설파이드 유리에서 관찰되었으나 셀레나이드 유리에서는 $^{5}$ I$_{8}$ \$\longrightarrow$$^{5}$ I$_{5}$ 흡수 스펙트럼과 여기 스펙트럼의 모양이 유사하였으며, 이러한 현상은 각 비정질 유전체 재료의 광학적 비선형성과 단파장쪽 투과단의 차이에 기인한다. 한편, Tb$^{3+}$ , Dy$^{3+}$ , Eu$^{3+}$ 또는 N$d^{3+}$ 이온을 공동 첨가함으로써 $^{5}$ I$_{7}$ 준위의 형광수명을 효과적으로 감소시킬 수 있으나 Eu$^{3+}$ 이온을 제외한 나머지 공동 첨가제는 기저상태 흡수를 통하여 1.6 $\mu$m 대역에서의 흡수 손실을 크게 한다. 따라서 형광수명 감소 효과가 Tb$^{3+}$ 이온보다 크지는 않지만 추가적인 흡수 손실이 없는 Eu$^{3+}$ 이온이 공동 첨가제로 더 적합하다.

• 한국전자파학회논문지
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• 제17권10호
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• pp.967-975
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• 2006

본 논문에서는 40 GHz 대역에서 동작하는 IEEE 802.16 고정 무선 통신을 위한 천이, 소형 TDD 송수신 모듈의 front-end 모듈을 설계하고 구현하는 방법을 제안한다. 제안된 모듈은 저손실과 소형화를 동시에 달성하기 위하여 캐비티 공정을 가지는 다층 LTCC 기술을 이용하여 제작되었다. 스위치의 입출력단에 와이어본드 정합회로의 설계 및 안테나와의 연결을 위한 도파관 천이 구조를 통해 저손실의 천이를 얻었으며, 기존 금속 도파관 필터를 대체한 유전체 도파관 필터를 사용함으로써 소형화를 달성하였다. 이를 구현하기 위해 유전율 7.1, 두께 100 um인 총 6층의 LTCC 기판을 사용하였으며 제작된 소형 front-end 모듈의 크기는 $30{\times}7{\times}0.8mm^3$이다. 그리고 송수신 삽입 손실 < 5.3 dB, 이미지 신호 제거 > 49 dB의 우수한 천이를 얻을 수 있었다.

• Rapid Communication in Photoscience
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• 제1권1호
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• pp.1-9
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• 2012

Luminescent lanthanide complexes have been overviewed for advanced photonics applications. Lanthanide(III) ions ($Ln^{3+}$) were encapsulated by the luminescent ligands such as metalloporphyrins, naphthalenes, anthracene, push-pull diketone derivatives and boron dipyrromethene(bodipy). The energy levels of the luminescent ligands were tailored to maintain the effective energy transfer process from luminescent ligands to $Ln^{3+}$ ions for getting a higher optical amplification gain. Also, key parameters for emission enhancement and efficient energy transfer pathways for the sensitization of $Ln^{3+}$ ions by luminescent ligands were investigated. Furthermore, to enhance the optophysical properties of novel luminescent $Ln^{3+}$ complexes, aryl ether-functionalized dendrons as photon antennas have been incorporated into luminescent $Ln^{3+}$ complexes, yielding novel $Ln^{3+}$-cored dendrimer complex such as metalloporphyrins, naphthalenes, and anthracenes bearing the Fr$\acute{e}$chet aryl-ether dendrons, namely, ($Er^{3+}-[Gn-Pt-Por]_3$ (terpy), $Er^{3+}-[Gn-Naph]_3$(terpy) and $Er^{3+}-[Gn-An]_3$(terpy)). These complexs showed much stronger near-IR emission bands at 1530 nm, originated from the 4f-4f electronic transition of the first excited state ($^4I_{13/2}$) to the ground state ($^4I_{15/2}$) of the partially filled 4f shell. A significant decrease in the fluorescence of metalloporphyrins, naphthalenes and anthracene ligand were accompanied by a strong increase in the near IR emission of the $Ln^{3+}$ ions. The near IR emission intensities of $Ln^{3+}$ ions in the lanthanide(III)-encapsulated dendrimer complexes were dramatically enhanced with increasing the generation number (n) of dendrons, due to the site-isolation and the light-harvesting(LH) effects. Furthermore, it was first attempted to distinguish between the site-isolation and the light-harvesting effects in the present complexes. In this review, synthesis and photophysical studies of inert and stable luminescent $Ln^{3+}$ complexes will be dealt for the advanced photonics applications. Also, the review will include the exploratory investigation of the key parameters for emission enhancement and the effective energy transfer pathways from luminescent ligands to $Ln^{3+}$ ions with $Ln^{3+}$-chelated prototype complexes.

• 한국재료학회지
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• 제21권4호
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• pp.216-219
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• 2011

Perovskite manganites such as $RE_{1-x}A_xMnO_3$ (RE = rare earth, A = Ca, Sr, Ba) have been the subject of intense research in the last few years, ever since the discovery that these systems demonstrate colossal magnetoresistance (CMR). The CMR is usually explained with the double-exchange (DE) mechanism, and CMR materials have potential applications for magnetic switching, recording devices, and more. However, the intrinsic CMR effect is usually found under the conditions of a magnetic field of several Teslas and a narrow temperature range near the Curie temperature ($T_c$). This magnetic field and temperature range make practical applications impossible. Recently, another type of MR, called the low-field magnetoresistance(LFMR), has also been a research focus. This MR is typically found in polycrystalline half-metallic ferromagnets, and is associated with the spin-dependent charge transport across grain boundaries. Composites with compositions $La_{0.7}(Ca_{1-x}Sr_x)_{0.3}MnO_3)]_{0.99}/(BaTiO_3)_{0.01}$ $[(LCSMO)_{0.99}/(BTO)_{0.01}]$were prepared with different Sr doping levels x by a standard ceramic technique, and their electrical transport and magnetoresistance (MR) properties were investigated. The structure and morphology of the composites were studied by X-ray diffraction (XRD) and scanning electronic microscopy (SEM). BTO peaks could not be found in the XRD pattern because the amount of BTO in the composites was too small. As the content of x decreased, the crystal structure changed from orthorhombic to rhombohedral. This change can be explained by the fact that the crystal structure of pure LCMO is orthorhombic and the crystal structure of pure LSMO is rhombohedral. The SEM results indicate that LCSMO and BTO coexist in the composites and BTO mostly segregates at the grain boundaries of LCSMO, which are in accordance with the results of the magnetic measurements. The resistivity of all the composites was measured in the range of 90-400K at 0T, 0.5T magnetic field. The result indicates that the MR of the composites increases systematically as the Ca concentration increases, although the transition temperature $T_c$ shifts to a lower range.

• 마이크로전자및패키징학회지
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• 제18권4호
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• pp.19-25
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• 2011

현대 전자 산업에서Cu/Low-K공정의 도입을 통해 반도체 칩의 소형화 및 전기적 성능 향상이 가능해졌으나, Cu/Low-K는 기존의 반도체 제조 공정에 사용된 물질에 비해 물리적으로 매우 취약해진 단점을 가지고 있어 칩 제조 공정 과 패키지 공정에서 많은 문제를 유발하고 있다. 특히, 온도 사이클 후, Cu 층과 Low-K 유전층 사이의 박리현상은 주요 불량 현상의 하나이다. Cu/Low-K층은 플립 칩 패드의 상부에 위치하기 때문에 플립 칩이 받는 스트레스가 직접적으로 Cu/Low-K층에 영향을 주고 있다. 이런 문제를 해결하기 위한 언더필 공정이나 언더필 물질의 개선이 필요하게 되었고 특히, 플립 칩에 대한 스트레스를 줄이고 솔더 범프를 보호하기 위한 언더필의 선택이 중요하게 되었다. 90 nm Cu/Low-K 플립 칩 패키지의 온도 사이클 후 발생한 박리 문제를 적합한 언더필 선택을 통해 해결하였다.

• 한국재료학회지
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• 제10권1호
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• pp.34-40
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• 2000

디지털형 압전/전왜 액츄에이터 응용을 위하여 상경계(반강유전상/강유전상) 조성인 $Pb_{0.94}Y_{0.04}[(Zr_0.6Sn_0.4)_{0.915}Ti_0.085]O_3$ (PYZST) 계를 택하여 과잉 PbO의 첨가량 및 소결 조건 변화에 따른 상전이 특성, 유전 특성 및 전기장 유기변형 특성을 연구하였다. 사방정 구조를 갖는 PYZST 세라믹스에서 과잉 PbO 첨가에 따른 결정구조의 변화는 거의 확인되지 않았으나, 소결 후 입자가 약간 작아지며 둥근 형태로 변화하였고 첨가량 증가에 따라 적정 소결온도는 감소하였다. 과잉 PbO의 첨가량이 증가함에 따라, 분극측정시 반강유전상이 보다 안정되는 경향을 보였고, 전계유도변형 측정시 인가전기장 제거상태에서의 변형의 형상기억성이 감소하고 디지털형 변형곡선 특성이 강화되었다. 또한 최대 유전상수와 전계 유기변형량은 감소하였으나 반면 상전이(반강유전상$\leftrightarrow$강유전상) 전기장 및 비저항은 증가하는 경향을 나타냈다. 이러한 결과는 과잉으로 첨가된 PbO에 의한 격자 결함반응 및 분역벽 이동 거동 가능성과 연관시켜 설명하였다.