• Journal of the Korean Chemical Society
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• v.43 no.6
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• pp.636-643
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• 1999

Green-emission intensity of a $Zn_{2-x}Mn_xSiO_4$ phosphor, which is a potential candidate as a green component in PDP device, significantly increases provided that the compound is additionally heat treated at 900$^{\circ}C$ after solid state reaction at 1300$^{\circ}C$. In order to verify origin of such an intensity enhancement after the additional heat treatment in association with the electronic and local structural change at around Mn ions, the Mn K-edge X-ray absorption spectra were recorded. From the analyses of the preedge peak corresponding to $1s{\rightarrow}3d$ bound state transition and XANES spectrum, it is known that most Mn ions are in +2 oxidation state and substitute Zn ion site regardless of the thermal treatment. In addition, EXAFS analyses revealed that Mn ions formed $MnO_4$ tetrahedra with the Mn-O bond length shortened by 0.01${\AA}$ and with reduced Debye-Waller factor in the thermally treated sample.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

• Journal of the Korean Chemical Society
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• v.19 no.2
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• pp.92-97
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• 1975

The molecular and electronic structures of $TiCl(OC_6H_5)_3{\cdot}C_6H_5OH\;and\;Ti(OC_6H_5)_4{\cdot}C_6H_5OH$ have been studied by employing cryoscopic and electronic spectroscopic methods. The cryoscopic data have shown that the dimeric tetraphenoxytitanium(Ⅳ) phenolate in solid undergoes complete dissociation into monomer in solution and also the chlorocomplex starts dissociation around the concentration of 8 m mole/l. Therefore, these two Ti-complexes are pentacoordinated in dilute solution and the local symmetry of the titanium ion in these complexes seems to be trigonalbipyramid. The electronic spectra of $TiCl(OC_6H_5)_3{\cdot}C_6H_5OH$ and $Ti(OC_6H_5)_4{\cdot}C_6H_5OH$ each show two band, systems, one vibration-structural band characteristic of the aromatic ring in the near UV and another visible band at 26.8 kK, 29.6 kK, respectively, which are assigned as a ligand to metal charge transfer band corresponding to $^1A_1''{\to}^1E'\;or\;^1E''$ transition.

• Journal of Photoscience
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• v.2 no.2
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• pp.89-93
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• 1995

Solvatochromic effects and hydrogen bonding interactions of 4-hydroxy-4'-nitrostilbene(NSOH) were investigated. Electronic transition energies of NSOH have good correlation with Taft's $\pi$$^*$. The hydrogen bonding interactions can be accounted by analysis with equation of $\Delta$E= $\Delta$E$_0$ + s($\pi$$^*$ + d$\delta$) + a$\alpha$ + b$\beta$. From UV-visible absorption maximum energies, $\Delta$E = 81.2 kcal/mole - 6.66($\pi$$^*$ - 0.20$\delta$) - 0.66$\alpha$ - 1.93$\beta$ (corr.=0.970) was obtained, and from fluorescence intensity maximum energies, $\Delta$E= 70.07 kcal/mole - 21.6($\pi$$^*$ - 0.11d) - 1.74$\alpha$ - 2.73$\beta$ (corr.=0.947) was obtained. The micropolarity estimated at the solubilization sites is close to the polarity of water. The apparent Taft's $\pi$$^*$ values of solubilization sites are close to 1. Howcver, the solubilization sites for the fluorescent NSOH is rather nonpolar. Both NSOH and NSO$^-$ can be solubilized in CTAB and CTAC micelles and NSOH is the only species that can be solubilized in SDS and Brij-35 micelles.

• The Journal of Korean Academic Society of Nursing Education
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• v.19 no.3
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• pp.307-319
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• 2013

Purpose: The purpose of this study was to review nursing studies with regard to simulation- based learning in Korea. Methods: This systematic review examines the literature on simulation in nursing education from 2003 to 2012. The electronic databases reviewed included: RISS, the National Assembly Library, the National Library of Korea, and major nursing journal databases in Korea. The MeSH search terms included nursing, simulation, simulator, and standardized patient. Results: In total, 52 studies were included in the literature review. We included 21 quasi-experimental studies and 25 studies using high-fidelity simulation. They included knowledge and problem-solving ability in the cognitive domain; self efficacy, learning satisfaction, interpersonal relationships and communication, and confidence in the affective domain; and clinical performance ability and learning performance evaluation in the psychomotor domain. This systematic literature review revealed that simulation is useful in nursing education but uncovered a gap in the literature pertaining to the transfer of knowledge to performance and how to learn from cognitive reflection. Conclusions: This result suggests that it is necessary to conduct additional research on the cognitive learning process and transition to performance.

• Journal of the Korean Institute of Intelligent Systems
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• v.26 no.2
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• pp.135-140
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• 2016

Corrective controllers enable fault diagnosis and tolerance for various faults in asynchronous sequential circuits without resort to redesign. In this paper, we propose a static corrective controller in order to decrease the size of the controller. Compared with dynamic controllers, static controllers can be made using only combinational circuits, as they need no inner states. We address the existence condition and design procedures for static corrective controllers that overcome state transition faults. To show the validity and advantage, the proposed controller is applied to an SEU error counter implemented on FPGA.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.298.1-298.1
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• 2016

Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1239-1243
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• 1997

A phase analysis in the solid solution of (1-x) PbFe1/2Nb1/2O3-xPbCo1/2W1/2O3 is conducted by dielectric properties, heat capacity and E-P hysteresis at x=0.1 interval. Lattice constants and superlattice intensity are analyzed by the x-ray diffraction, and the temperature - composition phase diagram is determined. The system is found to form a solid solution of perovskite structure throughout the entire composition range, but the nature of phase transitions changes from ferroelectric-paraelectric for $0{\leq}x{\leq}0.5$ to antiferroelectric-paraelectric for $0.6{\leq}x{\leq}1.0$. The transitions of ferroelectric-paraelectric and antiferroelectric-paraelectric for $0.2{\leq}x{\leq}0.5$ and for $0.6{\leq}x{\leq}0.8$, respectively, are diffuse, while those of the ferroelectric-paraelectric and the antiferroelectric-paraelectric for $0.0{\leq}x{\leq}0.1$ and $0.9{\leq}x{\leq}1.0$, respectively are sharp.

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1720-1725
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• 2015

The performance of the AlGaN/GaN MSM-2DEG varactor with different dielectric films deposited by the E-beam deposition is investigated in detail. The capacitance swing and the capacitance ratio of the varactor without dielectric film as well as with, SiO₂, Gd₂O₃, and Si₃N₄ films, respectively, are determined by electrodes of varying areas. The maximum capacitance, the minimum capacitance and the capacitance ratios are proportional to the increasing of the electrode areas. The capacitance ratio determined by the maximum and the minimum capacitance is found to be 18.35 (with Si₃N₄ dielectric film) and 149.51 (without dielectric film), respectively. The transition voltages of the fabricated varactors are almost the same for a bias voltage of about ±5 V and leakage current can be lower three orders of magnitude while the varactors with dielectric films. The tunability of the capacitance ratio makes the AlGaN/GaN MSM-2DEG varactor with a dielectric film highly useful in multirange applications of a surge free preamplier.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.120.2-120.2
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• 2011

The improvement of solar energy-to-electricity conversion efficiency has continued to be an important research area of dye-sensitized solar cells (DSSCs). The mechanism of DSSCs is based on the injection of electrons from the photoexcited dye into the conduction band of nanocrystalline TiO2 or ZnO. Thus, the electronic structures, such as HOMO, LUMO, and HOMO-LUMO band gaps of dye moleculed in DSSC are deeply related to the electron transfer by photoexcitation and redox potential. Organic dyes, because of their many advantages, such as high molar extinction coefficients, convenience of customized molecular design for desired photophysical and photochemical properties, inexpensiveness with no transition metals contained, and environment-friendliness, are suitable as photosensitizers for DSSC. We believe that practically useful organic dye photosensitizers can be produced by exploiting electron donor/acceptor system with proper length of ${\pi}$-conjugation in a chromophore to control the absorption wavelength and enhance the photovoltaic performance. In this research, We designed and synthesized organic dyes also investigated the photoelectrochemical properties of a series of ionic dyes in DSSCs.