• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.479-480
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• 2010

In this paper, the bi-directional soft switching DC-DC converter using ZCT(Zero Current Transition) method is proposed for using battery application system. This topology is composed of soft switching bi-directional buck/boost converter having the ZCT auxiliary circuit with two switches, two resonant capacitors, one resonant inductor. Therefore, the proposed topology can reduce switching loss. To verify the validity of the proposed topology, theoretical analysis and simulation results are presented.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.660-665
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• 1996

Thin films of indium oxide and indium tin oxide have been prepared by d.c. magnetron sputtering onto the fused silica substrates kept at 90, 200 and $300^{\circ}C$. In order to elucidate the optical absorption process in low energy region below 3 eV, we have analyzed the absorption coefficients obtained from reflectance and transmittance measurements for these films based on the Lucovsky model. It has been found for the first time that a defect center in the band gap is located at 0.8~1.4 eV below the Fermi level in all films and arises from oxygen vacancies in their films. The optical absorption in low energy region is explained to be dominated by the transition of electrons trapped at the positively charged (+2e) oxygen vacancies with s-like nature to the conduction band formed from the 5s-orbit in indium atoms.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.297-298
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• 2011

Metal/poly (4,4'-aminotriphen-ylene hexafluoroisopropylidenediphthalimide) (TP6F PI)/metal structure exhibited an electrically volatile phase transition with high (OFF) or low (ON) resistive states when voltage between electrodes swept. Here, we demonstrate a noble set-up in which holes are injected by photoelectron emission process during the voltage sweep instead of direct charge carrier injection via metal electrode, which enables direct investigation into changed electronic structures of TP6F PI both in ON and OFF states using photoemission spectroscopy methods. In the I-V measurement, TP6F PI shows a non-volatile behavior. In spectroscopic results, this non-volatile behavior is leaded from the structural modification of the O=C double bond in phthalimide of TP6F PI by hole injection.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.6 no.4
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• pp.989-1005
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• 2012

In this paper, throughput of IEEE 802.11 carrier-sense multiple access (CSMA) with collision-avoidance (CA) protocols in non-saturated traffic conditions is presented taking into account the impact of imperfect channel sensing. The imperfect channel sensing includes both missed-detection and false alarm and their impact on the utilization of IEEE 802.11 analyzed and expressed as a closed form. To include the imperfect channel sensing at the physical layer, we modified the state transition probabilities of well-known two state Markov process model. Simulation results closely match the theoretical expressions confirming the effectiveness of the proposed model. Based on both theoretical and simulated results, the choice of the best probability detection while maintaining probability of false alarm is less than 0.5 is a key factor for maximizing utilization of IEEE 802.11.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.68-68
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• 2018

Nanoporous or nanotubular metal oxide can be fabricated by anodization of metal substrate in fluoride contained electrolytes. The approach allows various transition metals such as Zr, Hf, Nb, Ta to form highly ordered oxide nanostructures. These oxide nanostructures have various advantages such as high surface area, fast electron transport rate and slow recombination in semiconductive materials. Recently, vanadium oxide nanostructures have been drawn attentions due to their superior electronic, catalytic and ion insertion properties. However, anodization of vanadium metal to form oxide layers is relatively difficult due to ease formation of highly soluble complex in water contained electrolyte during anodization. Yang et al. reported $[TiF_6]^{2-}$ or $[BF_4]^-$ in electrolyte helps to formation of stable oxide layer [1, 2]. However, the reported approaches are very sensitive in other parameters. In this presentation, we deal with the other important key parameters to form ordered anodic vanadium oxide such as pH, temperatures and applied potential.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.5
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• pp.2590-2606
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• 2017

Generally, research of classical image classification algorithms assume that training data and testing data are derived from the same domain with the same distribution. Unfortunately, in practical applications, this assumption is rarely met. Aiming at the problem, a domain adaption image classification approach based on multi-sparse representation is proposed in this paper. The existences of intermediate domains are hypothesized between the source and target domains. And each intermediate subspace is modeled through online dictionary learning with target data updating. On the one hand, the reconstruction error of the target data is guaranteed, on the other, the transition from the source domain to the target domain is as smooth as possible. An augmented feature representation produced by invariant sparse codes across the source, intermediate and target domain dictionaries is employed for across domain recognition. Experimental results verify the effectiveness of the proposed algorithm.

• Proceedings of the Korean Magnestics Society Conference
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• 2013.12a
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• pp.29-29
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• 2013

We predict agigantic perpendicular magnetocrystalline anisotropy (MCA) in Fe (001) capped by 5d transition metal (TM) overlayers by using first principles calculations. Analysis of atom-by-atom contribution to MCA reveals that gigantic MCA as large as 11 meV/TM originates not from Fe atoms but from the 5d TMs through the strong spin-orbit coupling. More specifically, it is the hybridization between TM and Fe d orbitals that also induces non-negligible magnetic moments in TM. Furthermore, spin-channel decompositions of MCA matrix with and without the presence of Fe substrate identify the electronic origin of the perpendicular MCA that the down-down channel contribution plays the most crucial role for the sign changes of MCA of TM overlayers upon the hybridization with Fe-3d.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.10 no.1
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• pp.75-89
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• 1984

$^1O_2$ quenching abilities of several carotenoids which contain hydroxy, carbonyl and ester groups were compared quantitatively with $\beta$-carotene, and the capacity of the quenching was interpreted in the light of electronic effects. The rate constans of $^1O_2$ quenching of lutein diester and astaxanthin diester in MeOH solution were shown to be $1.9\times10^{10}M^{-1}Sec^{-1}$, $2.3\times10^{10}M^{-1}Sec^{-1}$ respectively. Under the experimental conditions, and within the carotenoid tested results, the larger the resonance energy is, the larger becomes the rate constant and consequently the lower the transition energy is, the better becomes the quencher.

• Korean Journal of Materials Research
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• v.16 no.7
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• pp.401-407
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• 2006

ZnO is well-known as a promising material for optical communication systems and electronic displays. ZnO:Er thin films were deposited on c-plane sapphire substrates by rf magnetron sputtering, and the effects of sputtering parameters and the annealing conditions on the luminescence in the visible range were investigated. Luminescent properties depended on the crystallinity of films and annealing atmosphere. Highly c-axis oriented ZnO:Er films showed a strong emission band at 465 nm and a weak emission at 525 nm due to the energy transition of $^{4}I_{15/2}-^{4}F_{5/2}\;and\;^{4}I_{15/2}-^{2}H_{11/2}$, respectively. ZnO:Er thin films annealed at air atmosphere were superior to those annealed in $H_2$ in photoluminescence intensity.

• Journal of Magnetics
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• v.2 no.4
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• pp.111-115
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• 1997

The electronic structure of the Kondo insulator CeNiSn has been investigated by using photoemission spectroscopy. A satellite feature is observed in the valence band spectrum about 6 eV below the Ni 3d main peak, indicating a strong Ni 3d Coulomb correlation in CeNiSn. The Ce 4f partial spectral weight exhibits three peak structures, including one due to the 4f1\longrightarrow4f0 transition, another near EF, and the other which overlaps the Ni 3d main peak. We interpret the peak near EF as reflecting mainly the Ce 4f/Sn 5p hybridization, whereas that around the ni 3d main peak as reflecting both the Ce 4f/Ni 3d and Ce 5d/Ni 3d hybridization. Yield measurements across the 4d\longrightarrow4f threshold indicate the Ce valence to be close to 3+. The prominent Fermi edge suggests a metallic ground state in CeNiSn.