• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.73-76
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• 1992

The amorphous phase of bulk and thin film in the As-Se-S-Ge system was observed by X-ray diffraction. Thermal analysis using DSC, DTA and TGA method has been used for the determination of the glass transition temperature, Tg. The glass transition temperature, Tg for the composition were $238^{\circ}C$ in $As_{40}Se_{15}S_{35}Ge_{10}$ and $231^{\circ}C$ in $AS_{40}Se_{25}S_{25}Ge_{10}$ and $As_{40}Se_{50}Ge_{10}$. The phase seperation of continuous phase and dispersive phase was observed by the optical texture of the polarizing microscope. Also, the glass transition temperature of the thin film was near $200^{\circ}C$. As the results of SEM-EDS analysis, the phase transition of the films by thermal treatment and light illumination was the amorphous to amorphous.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.687-692
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• 1998

Silicon doped $Al_{0.32}Ga_{0.68}As$ were growth by molecular beam epitaxy. Electroreflectance(ER) spectra of the $E_1$ transition of Schottky barrier Au/n-$Al_{0.32}Ga_{0.68}As$ have been measured at various modulation voltage($V_{ac}$) and dc bias voltage($V_{bias}$). from the $E_1$peak, band gap energy of the $Al_{0.32}Ga_{0.68}As$ is 1.883 eV which corresponds to an Al composition of 32%. As modulation voltage($V_{bias}$) is changed, a line shape at the $E_1$transition does not change, but its amplitude varies linearly. The amplitude of $E_1$signal decrease with increasing the forward dc bias voltage($V_{bias}$), but the line shape does not change. It suggests that the low field theory rather than Franz-Keldysh oscillation is Required to interpret spectra. Also, spectra at the $E_1$transition were broadened with increasing the reverse dc bias voltage($V_{bias}$) which suggests the presence of Field-induced broadening.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.641-646
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• 2004

We report the changes of the microwave reflection coefficients S$_{11}$ of copper(II)-phthalocyanine (CuPc) thin films by using a near-field microwave microscope(NSMM) in order to understand the phase transition of CuPc. For a NSMM system, a high-quality microstrip resonator coupled with a dielectric resonator was used. CuPc thin films were prepared on the pre-heated glass substrates using a thermal evaporation method. The reflection coefficients S$_{11}$ of CuPc thin films were changed by the dependence on the substrate pre-heating temperatures. By comparing reflection coefficient S$_{11}$ and crystal structures, we found the phase transition of CuPc thin films from $\alpha$-phase to $\beta$-phase at the substrate heating temperature 200 $^{\circ}C$./TEX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.118-119
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• 2006

In the present work, we investigate the basic physical and thermal properties and electrical resistance change due to phase change in chalcogenide-based $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films. The phase transition from amorphous to crystalline states, and vice versa, of $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films by applying electrical pulses have been studied. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.77-80
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• 1995

Enhancing the electrical conductivity of the ultrathin organic films using Langmuir-Blodget technique is important step for the developement of molecular electronic device. The Octadecylviologen-TCNQ was synthesized with Octadecylviologen-Bromide an Lithium TCNQ Sine Octadecylviologen-TCNQ has two TCNQ snion radicals, the conductivity of LB film is expected to increase. The $\pi$-A isotherm showed that the limiting area was 150${\AA}$$\^$2/ molecule and the silid-like transition surface pressure was 25 mN/m. The electronic transition of the TNCNQ anion radical was observed at 400 nm. Intermolecular charge transfer absorption was observed at 600nm and 850~1050 nm which ay resulted from the TCNQ anion radical dimer formation. The electrical conductivity of the viologen -TCNQ LB film was 10$\^$-6/cm This values was 100 times higher than that of the quinolinium-TCNQ and pyridinium-TCNQ LB films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.191-192
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• 2008

For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of $Ge_1Se_1Te_2$ material to use a Se factor which has good optical sensitivity than conventional Sb. Ge-Se-Te and Ag/$Ge_1Se_1Te_2$ samples are fabricated and irradiated with He-Ne laser and DPSS laser to investigate a reversible phase change by light. Because of Ag ions, the Ag layer inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.94-97
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• 2018

Lead zirconate titanate/poly-vinylidene fluoride (PZT/PVDF) piezoelectric devices were fabricated by incorporating carbon nanotubes (CNTs), for use as flexible energy harvesting devices. CNTs were added to maximize the formation of the ${\beta}$ phase of PVDF to enhance the piezoelectricity of the devices. The phase transition of PVDF induced by the addition of CNTs was confirmed by analyzing the X-ray diffraction patterns, scanning electron microscopy images, and atomic force microscopy images. The enhanced output efficiency of the PZT/PVDF piezoelectric devices was confirmed by measuring the output current and voltage of the fabricated devices. The maximum output current and voltage of the PZT/PVDF piezoelectric devices was 200 nA and 350 mV, respectively, upon incorporation of 0.06 wt% CNTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.323-326
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• 2000

In this study, we used Brewster-Angle Microscope(BAM) to study on the molecular orientation of monolayer on the water surface. The behaviors of molecules on three different subphase have been observed. Reproducible $\pi$-A isotherm have been obtained only on information about phase transition by molecular area. BAM facilitates the observation of morphology by optical anisotropy and thickness in monolayer and multilayers as BAM is shown to be sensitive to anisotropy of film. Every transition was found by BAM technique, either as a dramatic change in degree of contrast or as a sudden alteration of molecular action and $\pi$-A isotherm.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.696-701
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• 1996

In this study, deposited lipid membranes on the electrode and detected thermally stimulated displacement current generated from it. The researchers examined displacement current of electric conduction organic monolayer generated due to orient change of monolayers alkylchain and changed of dipole moment vertical component due to thermally stimulated. We paid attention to the phase transition temperature obtained by the thermally stimulated displacement current of lipid membrane layers this time. We detected the thermally stimulated displacement current peak of layers. From above results the transition temperature dilauroylphosphatidylcholine layers is about 43.deg. C. This study also compared above results with those obtained by differential thermal analysis method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.555-558
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• 2000

Layered perovskite La$_{2-x}$Ca$_{l-x}$Mn$_2$O$_{7}$ phases were synthesized by solid state reaction. Single phase R-P could be obtained in the range of 0.4$_{2-x}$Ca$_{l-x}$Mn$_2$O$_{7}$. About 30% of MR ratio was obtained at 270K when 5 T of magnetic field was applied.ied.ied.ied.