• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.3
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• pp.270-277
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• 2013

In this paper, we propose a wideband ridge SIW(Ridge Substrate Integrated Waveguide)-to-SIW(Substrate Integrated Waveguide) transition. The proposed transition structure is designed to acquire a wide bandwidth by inserting through via holes at the regular interval for an impedance matching and an E-field mode matching method. The measurement results show a fractional bandwidth is 29.1 % at 20 dB return loss from the center frequency(11 GHz). The maximum insertion loss is 0.49 dB from 9.21 GHz to 12.41 GHz.

• Korean Journal of Computational Design and Engineering
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• v.12 no.2
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• pp.87-94
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• 2007

The functional behavior of a consumer electronic product is nearly all expressed with human-machine interaction (HMI) tasks. Although physical prototyping and computer aided design (CAD) software can show the appearance of the product, they cannot properly reflect its functional behavior. In this paper, we propose an approach to virtual prototyping (VP) that incorporates HMI functional simulation into virtual reality techniques in order to enables users to capture not only the realistic look of a consumer electronic product but also its functional behavior. We adopt state transition methodology to capture the HMI functional behavior of the product into a state transition chart, which is later used to construct a finite state machine (FSM) for the functional simulation of the product. The FSM plays an important role to control the transition between states of the product. We have developed a VP system based on the proposed approach. The system receives input events such as mouse clicks on buttons and switches of the virtual prototype model, and it reacts to the events based on the FSM by activating associated activities. The system provides the realistic visualization of the product and the vivid simulation of its functional behavior using head-mounted displays (HMD) and stereo speakers. It can easily allow users to perform functional evaluation and usability testing. A case study about the virtual prototyping of an MP3 player is given to show the usefulness of the proposed approach.

• Journal of the Korean Chemical Society
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• v.34 no.6
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• pp.593-599
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• 1990

A series of new, square planar, and mixed-ligand complexes of Ni(Ⅱ), Pd(Ⅱ), and Pt(Ⅱ) have been prepared. From the observation of electronic spectrum for the variation of the ligand substituents, the very intense absorption band in the visible range is by the electronic transition of dithiolene to diimine ligand, HOMO to LUMO. In the various solvent systems the IT band shows the similar behavior to IT transition of mixed-valence dinuclear complexes followed with Hush theory, happens rto dominently by the inner sphere charge transfer transition. The negative solvatochromism represents that the excited-state electric dipole is reduced or reversed by the electronic transition.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.8 s.338
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• pp.7-14
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• 2005

This paper presents a new low power BIST TPG scheme. It uses a transition monitoring window (TMW) that is comprised of a transition monitoring window block and a MUX. When random test patterns are generated by an LFSR, transitions of those patterns satisfy pseudo-random gaussian distribution. The Proposed technique represses transitions of patterns using a k-value which is a standard that is obtained from the distribution of U to observe over transitive patterns causing high power dissipation in a scan chain. Experimental results show that the Proposed BIST TPG schemes can reduce scan transition by about $60\%$ without performance loss in ISCAS'89 benchmark circuits that have large number scan inputs.

• Journal of the Korean Chemical Society
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• v.56 no.1
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• pp.34-46
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• 2012

Dopants and defects can be introduced as well as the intercalation of metals into single wall carbon nanotubes (SWCNTs) to modify their electronic and magnetic properties, thus significantly widening their application areas. Through spinpolarized density functional theory (DFT) calculations, we have systemically studied the following: (i) (10,0) and (5,5) SWCNT doped with nitrogen ($CN_xNT$), (ii) (10,0) and (5,5) SWCNT with pyridine-like defects (3NV-$CN_xNT$), and (iii) chemical functionalization of (10,0) and (5,5) 3NV-$CN_xNT$ with 12 different transition metals (TMs) (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, and Pt). Attention was done in searching for the most stable configurations, deformation, calculating the formation energies, and exploring the effects of the doping concentration of nitrogen and pyridine-like nitrogenated defects on the electronic properties of the nanotubes. Also, calculating the corresponding binding energies and effects of chemical functionalization of TMs on the electronic and magnetic properties of the nanotubes has been made. We found out that the electronic properties of SWCNT can be effectively modified in various ways, which are strongly dependent not only on the concentration of the adsorbed nitrogen but also to the configuration of the adsorbed nitrogen impurities, the pyridine-like nitrogenated defects, and the TMs absorbed; due to the strong interaction between the d orbitals of TMs and the p orbitals of N atoms, the binding strengths of TMs with the two 3NV-$CN_xNT$ are significantly enhanced when compared to the pure SWCNTs.

• Applied Microscopy
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• v.47 no.3
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• pp.187-202
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• 2017

The classical electron band theory is a powerful tool to describe the electronic structures of solids. However, the band theory and corresponding density functional theory become inappropriate if a system comprises localized electrons in a scenario wherein strong electron correlations cannot be neglected. $SrRuO_3$ is one such system, and the partially localized d-band electrons exhibit some interesting behaviors such as enhanced effective mass, spectral incoherency, and oppression of ferromagnetism and itinerancy. In particular, a Metal-Insulator transition occurs when the thickness of $SrRuO_3$ approaches approximately four unit cells. In the computational studies, irrespective of the inclusion of on-site Hubbard repulsion and Hund's coupling parameters, correctly depicting the correlation effects is difficult. Because the oxygen atoms and the symmetry of octahedra are known to play important roles in the system, scrutinizing both the electronic band structure and the lattice system of $SrRuO_3$ is required to find the origin of the correlated behaviors. Transmission electron microscopy is a promising solution to this problem because of its integrated functionalities, which include atomic-resolution imaging and electron energy loss spectroscopy.

• Ceramist
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• v.22 no.4
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• pp.350-356
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• 2019

Recently, transition metal dichalcogenide (TMDC) monolayers have been the subject of research exploring the physical phenomenon generated by low dimensionality and high symmetry. One of the keys to understanding new physical observations is the electronic band structure of 2D TMDCs. Angle-resolved photoelectron spectroscopy (ARPES) is, to this point, the best technique for obtaining information on the electronic structure of 2D TMDCs. However, through ARPES research, obtaining the long-range well-ordered single crystal samples always proves a challenging and obstacle presenting issue, which has been limiting towards measuring the electronic band structures of samples. This is particularly true in general 2D TMDCs cases. Here, we introduce the approach, with a mathematical framework, to overcome such ARPES limitations by employing the high level of symmetry of 2D TMDCs. Their high symmetry enables measurement of the clear and sharp electronic band dispersion, which is dominated by the band dispersion of single-crystal TMDCs along the two high symmetry directions Γ-K and Γ-M. In addition, we present two important studies and observations for the direct measuring of the exciton binding energy and charge transfer of 2D TMDCs, both being established by the above novel approach.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.107-109
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• 1989

Based on the ferroelectric microstructural residual stress model, the relation between grain size and residual elastic energy was proposed. It was found that the residual elastic energy increased with decreasing grain size by modeling and DSC results. This residual elastic energy change with grain size which induce the phase transituion mode change was the cause of a diffuse phase transition in small grain size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.150-153
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• 1996

Polyvinylidene fluoride(PVDF) thin films are fabricated by vapor deposition method and their dielectric characteristics are investigated. At electric field near 4MV/m, a phase transition occur with polar ${\alpha}$ . In accordance to increasing temperature, the dielectric relaxation of PVOF thin films show from 70Hz to 104Hz. This result correspond to Debye's theory[1]. Activation energy of PVDP thin film is 21Kca1/mo1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.191-194
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• 1996

Maxwell displacement current clearly shows the onset of a first order phase transition from gaseous to gaseous-fluid phase, and polar ordering of liquid molecules in the solid phase coexisting with fluid. For further monolayer compression in the fluid/solid phase transition, the condensation of domains was suggested.