• Bulletin of the Korean Chemical Society
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• v.25 no.10
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• pp.1459-1460
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.300-300
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.276.2-276.2
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• 2008

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.94-97
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• 2002

Phase transitions of the $Sm_{2}(MoO_{4})_{3}$ single crystal were studied through thermal analysis, x-ray methods and SEM/EDS. $Sm_{2}(MoO_{4})_{3}$ undergoes the ferroelastic and ferroelectric phase transition at $198^{\circ}C$. With increasing temperature, the second phase transition occurs at $928^{\circ}C$. From TG analysis, the mass loss of $Sm_{2}(MoO_{4})_{3}$ exhibits an anomalous behavior at about $650^{\circ}C$ and the curves increased monotonically to $1132^{\circ}C$. SEM and EDS show that the escape of ${MoO_{4}^{2-}$ tetrahedra from the lattice of $Sm_{2}(MoO_{4})_{3}$ increase above $928^{\circ}C$, so $Sm_{2}(MoO_{4})_{3}$ has a very rough surface and internal cracks.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.64-67
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• 2011

The effect of Ta substitution on the crystal structure, ferroelectric, and piezoelectric properties of $Bi_{0.5}(Na_{0.82}K_{0.18})_{0.5}Ti_{1-x}Ta_xO_3$ ceramics has been investigated. The Ta doping resulted in a transition from coexistence of ferroelectric tetragonal and rhombohedral phases to an electrostrictive pseudocubic phase, leading to degradations of the remnant polarization, coercive field, and piezoelectric coefficient $d_{33}$. However, the electricfield-induced strain was significantly enhanced by the Ta substitution-induced phase transition and reached a highest value of $S_{max}/E_{max}$ = 566 pm/V under an applied electric field 6 kV/mm when 2% Ta was substituted on Ti sites. The abnormal enhancement in strain was attributed to the pseudocubic phase with high electrostrictive constants.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.405-410
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• 2020

In this study, the following results were obtained by analysis of electric properties with FT-IR, DSC, XRD, and SEM, in the range of temperature 30~160℃ and frequency 0.1~200 kHz, when filling agent (0~100 phr) and silicone oil (0~12 phr) were added to raw silicone rubber. In the case of 100 phr mixed samples, the relative dielectric constant εr gradually decreased from 4.3 to 3.96 as frequency increased, and the dielectric loss tan δ decreased to 0.01 at 300 Hz, then increased to 0.022 at 30 kHz, then decreased to 200 kHz. The FT-IR analysis identified the same binding structure according to the chemical composition of added silica (SiO₂). Through DSC analysis, we could determine the change of heat quantity and the glass transition temperature of each specimen. In the XRD analysis, it was found that the images SiO₂, TiO₂, and Fe₂O₃ appeared for specimens with 0%, 50% and 100% filling agent. Finally, the SEM analysis confirmed that particles of 0.5 to 1.5 ㎛ size with silica (SiO₂) mixing were dispersed evenly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.470-473
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• 2001

In this study, 70/30 mol% P(VDF-TrFE) copolymer thin films were prepared by physical vapor deposition, and dielectric properties with frequency were investigated. From results of TA(Thermal Analysis), the Curie transition temperature and melting temperature were observed at 118.8$^{\circ}C$ and 146$^{\circ}C$, respectively. Therefore, while thin films were prepared, the substrate temperature was varied from 30$^{\circ}C$ to 90$^{\circ}C$. The dielectric constant decreased with increasing frequency. At measuring frequency of 1kHz, the relative dielectric constant increased from 3.643 to 23.998 with increasing substrate temperature from 30$^{\circ}C$ to 90$^{\circ}C$. As a result of dielectric loss factor, ${\alpha}$-relaxation and ${\beta}$-relaxation were observed near at 100Hz and 1MHz, respectively. And the magnitude of ${\alpha}$-relaxation decreased and that of ${\beta}$-relaxation increased with increasing substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.689-692
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• 2001

In this paper, the pizoelectric and dielectric properties of 0.95Pb(ZrxTil-x)O$_3$- 0.05Pb(Mn$\_$0.2/Fe$\_$0.4/W$\_$0.4/)O$_3$piezoelectric ceramics is investigated as a function of Zr/Ti mole ratio. Also, MPB(Morphotropic Phase Boundary) and optimal sintering temperature is studied using XRD and SEM. As a results, when Zr/Ti mole ratio is 52/48, electromechanical coupling factor, k$\_$p/, is 58[%], permittivity, $\varepsilon$$\^$T/$\_$33//$\varepsilon$0, is 1360 and piezoelectric strain constant, d$\_$33/ is 265[pC/N] and the piezoelectric and dielectric properties become maximum. Phase transition temperature of its ternary piezoelectric system is about 350[$^{\circ}C$]. From the XRD analysis, when Zr/Ti mole ratio is 52/48, tetragonal phase transits to rhombohedral phase. Also, From measuring results of the sintering density, when sintering temperature is 1050[$^{\circ}C$], sintering density become maximum and is about 7930[kg/㎥], and average grain size is about 2-3[$\mu\textrm{m}$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.311-314
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• 1998

The effects of the additions of transition metal oxides on ZrO$_2$ - Y$_2$O$_3$ (Y$_2$O$_3$ - containing tetragonal zirconia polycrystals : Y-TZP) system has been studied by investigating fracture toughness and phase stability of the sintered specimens. In the specimens sintered at 1450$^{\circ}C$ for 2hrs in air the phase transformation from tetragonal to monoclinic was observed. The ratios of monoclinic phase to tetragonal phase were changed with the additions of CoO, Fe$_2$O$_3$ and MnO$_2$, respectively, from 0.00 to 8.00wt%. The fracture toughness was increased with increasing the monoclinic to tetragonal phase ratio and was maximum at the ratio of about 18%. However, the hardness was decreased with increasing the ratio. The additions of CoO, Fe$_2$O$_3$ and MnO$_2$ together into Y-TZP resulted in more complex behaviors of fracture toughness and hardness. The specimen with the additions of 1.5wt% Fe$_2$O$_3$, 3.0wt% Al$_2$O$_3$ and 1.5wt% CoO showed the monoclinic to tetragonal phase ratio of 18% and the highest toughness of 10.8 MPa.m$\^$$\frac{1}{2}$/ and Vickers hardness of 1201kgf/mm$^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.52-59
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• 2001

The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.