• Title/Summary/Keyword: Electronic transition

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Development of a Smooth Colon Surface Restoration Method for Electronic Colon Cleansing (전자적 장세척을 위한 부드러운 장표면 복원 방법 개발)

  • Kim, Seung-Hwan;Kim, Dong-Sung
    • Journal of Biomedical Engineering Research
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    • v.32 no.3
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    • pp.251-256
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    • 2011
  • Virtual colonoscopy is favored over conventional colonoscopy because its non-invasive procedure can avoid complications that may happen in a conventional approach and because it can cleanse colon electronically instead of uncomfortable conventional colon cleansing. Electronic Colon Cleansing(ECC) has to deal with not only removing tagged fecal material but also recovering Partial Volume Effect(PVE) due to tagging material. This paper proposes an ECC method restoring inherent natural PVE while previous approaches focused only on reducing PVE due to tagged fecal material. The proposed method reduces PVE using 3-dimensional adaptive density correction and then replaces tagged fecal material into air. Next, it generates natural PVE for the replaced air adjacent to soft tissue and finally makes smooth transition of gray values for soft tissue adjacent to the replaced air. The proposed method applied to eleven patient data, and showed promising results.

Evaluation and Optimization of Power Electronic Converters using Advanced Computer Aided Engineering Techniques

  • Oza, Ritesh;Emadi, Ali
    • Journal of Power Electronics
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    • v.3 no.2
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    • pp.69-80
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    • 2003
  • Computer aided engineering (CAE) is a systematic approach to develop a better product/application with maximum possible options and minimum transition time. This paper presents a comprehensive feasibility analysis of various CAE techniques for evaluation and optimization of power electronic converters and systems. Different CAE methods for analysis, design, and performance improvement are classified. In addition, their advantages compared to the conventional workbench experimental methods are explained in detail and through examples.

Humidity Absorbing Deterioration Characteristics of Modified Epoxy Resin System with SN (SN으로 개질된 에폭시 수지 계의 흡습열화 특성)

  • 조영신;심미자;박수길;김상욱
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.421-424
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    • 1996
  • Effects of humidity absorbing deterioration on AC dielectric breakdown characteristics of modified epoxy resin system with SN(succinonitrile) were investigated. As the forced humidity absorbing deterioration proceeded under high temperature and humidify, glass transition temperature increased. The dielectric breakdown strength increased and then decreased at deterioration cycles higher than 2. Not only, the increment of thermal stability but also, the physical detects such as Internal cracks and voids occurred during the humidity absorbing deterioration cycle were the main causes of the change in dielectric properties.

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Metal-insulator Transition in $(Sr_{0.75},\;La_{0.25})TiO_3$ Ultra-thin Films

  • Choi, Jae-Du;Choi, Eui-Young;Lee, Yun-Sang;Lee, Jai-Chan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.19.2-19.2
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    • 2011
  • The $(Sr_{0.75},\;La_{0.25})TiO_3$ (SLTO) ultra-thin films with various thicknesses have been grown on Ti-O terminated $SrTiO_3$(100) substrate using Laser-Molecular Beam Epitaxy (Laser MBE). By monitoring the in-situ specular spot intensity oscillation of reflection high energy electron diffraction (RHEED), we controlled the layer-by-layer film growth. The film structure and topography were verified by atomic force microscopy (AFM) and high resolution thin film x-ray diffraction by the synchrotron x-ray radiation. We have also investigated the electronic band structure using x-ray absorption spectroscopy (XAS). The ultra thin SLTO film exhibits thickness driven metal-insulator transition around 8 unit cell thickness when the film thickness progressively reduced to 2 unit cell. The SLTO thin films with an insulating character showed band splitting in Ti $L_3-L_2$ edge XAS spectrum which is attributed to Ti 3d band splitting. This narrow d band splitting could drive the metal-insulator transition along with Anderson Localization. In optical conductivity, we have found the spectral weight transfer from coherent part to incoherent part when the film thickness was reduced. This result indicates the possibility of enhanced electron correlation in ultra thin films.

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A Study on the Thermal Properties of Epoxy/Micro-Nano Alumina Composites, as Mixture of Surface Modified Nano Alumina (표면개질된 나노알루미나를 혼합한, 에폭시/마이크로-나노알루미나 콤포지트의 열적특성)

  • Park, Jae-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.9
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    • pp.1504-1510
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    • 2016
  • The aim of this study is to improve properties both glass transition temperature($T_g$) and coefficient of thermal expansion(CTE) using epoxy/micro-nano alumina composites with adding glycerol diglycidyl ether (GDE:1,2,3,5g). This paper deals with the effects of GDE addition for epoxy/micro alumina contents (40, 50, 60wt%)+surface modified nano alumina(1_phr) composites. 20 kinds specimen were prepared with containing micro, nano alumina and GDE as a micro composites(10, 20, 30, 40, 50, 60, 70wt%) or a nano/micro alumina composites(1phr/40, 50, 60wt%). Average particle size of nano and micro alumina used were 30nm and $1{\sim}2{\mu}m$, respectively. The micro alumina used were alpha phase with Heterogeneous and nano alumina were gamma phase particles of spherical shape. The glass transition temperature and coefficients of thermal expansion was evaluated by DSC and TMA. The glass transition temperature decreased and coefficients of thermal expansion become smaller with filled contents of epoxy/micro alumina composites. On the other hand, $T_g$ and CTE as GDE addition variation(1,2,3,5g) of epoxy/micro-nano alumina composites decreased and increased respectively.

A Study of the Transition Process in Presidential Electronic Records Transfer and Improvement Measures : Focused on the Electronic Records of the 19th President Moon Jae-in's Administration (대통령 전자기록물의 이관방식 변천과 개선방안 연구 19대 문재인 정부 대통령 전자기록물을 중심으로 )

  • Yun, Jeonghun
    • The Korean Journal of Archival Studies
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    • no.75
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    • pp.41-89
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    • 2023
  • Since the enactment of the Act on the Management of Presidential Archives in 2007, the cases of electronic records transfer in the 16th President Roh Moo-hyun's administration have played the role of an advance guard in managing public records and served as a test bed for new electronic records management. When transferring the electronic records of the 19th President Moon Jae-in's administration, the electronic records transfer method of President Roh's administration was inherited, while several innovative attempts were made. For instance, the Presidential Archives have for the first time converted the electronic documents from institutions advising the President into a long-term preservation package and transferred them online. In addition, considering the characteristics of the data, the administrative information dataset of the Presidential record creation institutions was transferred to the SIARD standard. Furthermore, the Presidential Archives had websites transferred in the form of OVF as a pilot test and collected social media directly through the API. Thus this study investigated the transition process of the presidential electronic records transfers from the 16th President Roh Moo-hyun's administration to the 19th President Moon Jae-in's. In addition, major achievements and issues were analyzed centering on the transfer method by type of electronic records during President Moon Jae-in's administration, and future improvement plans were presented.

The Electrical Properties of the Laminated PTC Thermistor for Micro Circuit Protection as a Function of Starting Material and Sr Addition (초소형 회로보호용 적층 PTC 써미스터의 출발원료 및 Sr 첨가에 따른 전기적 특성)

  • Lee, Mi-Jai;Kim, Bit-Nan;Hwang, Jong-Hee;Kim, Jin-Ho;Park, Seong-Chul;Song, Jun-Baek
    • Journal of the Korean Ceramic Society
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    • v.48 no.6
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    • pp.525-530
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    • 2011
  • We investigated the electrical properties the starting material and sintering condition on the laminated PTC thermistor for micro circuit protection. The influences of $BaTiO_3$ powder with the 0.3 and 0.45 ${\mu}m$ size and the electrical characteristics (Ba,Sr)$TiO_3$ sintered at 1350~1400$^{\circ}C$ for 2 h in a reducing atmosphere (1% $H_2/N_2$). The sintered (Ba,Sr)$TiO_3$ was increased pore and the grain size was decreased according to increasing Sr additions. In relative permittivity, the phase transition temperature of (Ba,Sr)$TiO_3$ was decreased for 2.5$^{\circ}C$ according to increasing 0.01 mole Sr additions, and the phase transition dose not appeared about 0.3 mole Sr addition. The (Ba,Sr)$TiO_3$ was show the low resistance from 0.01 mole to 0.05 mole by Sr addition, regardless of sintering temperature. The (Ba,Sr)$TiO_3$ was show $10^2$ jump order at 0.1 and 0.2 mole Sr addition, and PTCR of the sintered $(Ba_{0.7}Sr_{0.3})TiO_3$ does not appeared about 0.3 mole Sr addition, regardless of the sintering temperature and starting material size.

Electrical Properties of SiC Composites by Transition Metal (천이금속에 따른 SiC계 복합체의 전기적 특성)

  • Shin, Yong-Deok;Seo, Je-Ho;Ju, Jin-Young;Ko, Tae-Hun;Kim, Young-Bek
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1303-1304
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    • 2007
  • The composites were fabricated, respectively, using 61[vol.%]SiC-39[vol.%]$TiB_2$ and using 61[vol.%]SiC-39[vol.%]$ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_{2}O_{3}+Y_{2}O_{3}$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. ${\beta}{\rightarrow}{\alpha}$-SiC phase transformation was occurred on the SiC-$TiB_2$ and SiC-$ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 226.06[Mpa] and 86.38[Gpa] in SiC-$ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SiC-$ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the SiC-$TiB_2$ and SiC-$ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the value of $6.88{\times}10^{-3}/[^{\circ}C]$ and $3.57{\times}10^{-3}/[^{\circ}C]$ for SiC-$ZrB_2$ and SiC-$TiB_2$ composite in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$.

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ZVT Series Capacitor Interleaved Buck Converter with High Step-Down Conversion Ratio

  • Chen, Zhangyong;Chen, Yong;Jiang, Wei;Yan, Tiesheng
    • Journal of Power Electronics
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    • v.19 no.4
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    • pp.846-857
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    • 2019
  • Voltage step-down converters are very popular in distributed power systems, voltage regular modules, electric vehicles, etc. However, a high step-down voltage ratio is required in many applications to prevent the traditional buck converter from operating at extreme duty cycles. In this paper, a series capacitor interleaved buck converter with a soft switching technique is proposed. The DC voltage ratio of the proposed converter is half that of the traditional buck converter and the voltage stress across the one main switch and the diodes is reduced. Moreover, by paralleling the series connected auxiliary switch and the auxiliary inductor with the main inductor, zero voltage transition (ZVT) of the main switches can be obtained without increasing the voltage or current stress of the main power switches. In addition, zero current turned-on and zero current switching (ZCS) of the auxiliary switches can be achieved. Furthermore, owing to the presence of the auxiliary inductor, the turned-off rate of the output diodes can be limited and the reverse-recovery switching losses of the diodes can be reduced. Thus, the efficiency of the proposed converter can be improved. The DC voltage gain ratio, soft switching conditions and a design guideline for the critical parameters are given in this paper. A loss analysis of the proposed converter is shown to demonstrate its advantages over traditional converter topologies. Finally, experimental results obtained from a 100V/10V prototype are presented to verify the analysis of the proposed converter.

Fractional-N Frequency Synthesizer for Mobile RFID (모바일 RFID 응용을 위한 Fractional-N 주파수합성기)

  • Kim, Kyung-Hwan;Ko, Seung-O;Park, Jong-Tae;Yu, Chong-Gun
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.441-442
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    • 2008
  • In this paper a Fractional-N frequency synthesizer is designed for UHF RFID readers. It satisfies the ISO/IEC frequency band $(860{\sim}960MHz)$ and is also applicable to mobile RFID readers. It is designed using a $0.18{\mu}$ RF CMOS process. The measured results show that the designed circuit has a phase noise of -103dBc/Hz at 100kHz offset and consumes 9mA from a 1.8V supply. The channel switching time of $10{\mu}s$ over 5MHz transition have been achieved, and the chip size including PADs is $1.8{\times}0.99mm^2$

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