• Title/Summary/Keyword: Electronic transition

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Design of 4-Way Wilkinson Divider with Waveguide to Stripline Transition Used in The Monopulse Radar Front-end (도파관 천이 구조를 갖는 모노펄스 레이더용 4-Way 윌킨슨 분배기 설계)

  • Koh, Young-Mok;Ra, Keuk-Hwan
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.11
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    • pp.69-76
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    • 2010
  • From the present paper we researched about the design of 4-Way Wilkinson divider with waveguide to stripline transition which used to split the LO signal with equi-amplitude and equi-phase in the X-Band Monopulse radar RF front-end. The monopulse radar front end operating in the X-Band is composed of 3 waveguide reception mixers which down convert sum, azimuth and elevation signal to IF and one SSB waveguide mixers which generate X-Band test signal. It is required the 4-way divider with low loss, equi amplitude and equiphase splitting the LO signal to provide the LO signal to each mixer consisting RF frontend. In this paper we designed and fabricated the 4-Way Wilkinson divider with waveguide transition to divide the LO signal into equi-amplitude and equi-phase. The fabricated Wilkinson divider have the insertion loss 6.8dB, VSWR 1.06~1.28, and phase balance maximum 4.5degree for each output ports.

Virtual Prototyping of Portable Consumer Electronic Products Based on HMI Functional Simulation (HMI 기능 시뮬레이션 기반 개인용 휴대전자제품의 가상시작)

  • Park, Hyung-Jun;Bae, Chae-Yeol;Moon, Hee-Cheol;Lee, Kwan-Heng
    • Proceedings of the Korean Operations and Management Science Society Conference
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    • 2005.05a
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    • pp.854-861
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    • 2005
  • The functional behavior of a portable consumer electronic (PCE) product is nearly all expressed with human-machine interaction (HMI) tasks. Although physical prototyping and computer aided design (CAD) software can show the appearance of the product, they cannot properly reflect its functional behavior. In this paper, we propose a virtual prototyping (VP) system that incorporates virtual reality and HMI functional simulation in order to enables users to capture not only the realistic look of a PCE product but also its functional behavior. We obtain geometric part models of the product and their assembly and kinematics information with the help of CAD and reverse engineering tools, and visualize them with various display tools. We adopt state transition methodology to capture the HMI functional behavior of the product into a state transition chart, which is later used to construct a finite state machine (FSM) for the functional simulation of the product. The FSM plays an important role to control the transition between states of the product. The proposed VP system receives input events such as mouse clicks on buttons and switches of the virtual prototype model, and it reacts to the events based on the FSM by activating associated activities. The VP system provides the realistic visualization of the product and the vivid simulation of its functional behavior. It can easily allow users to perform functional evaluation and usability testing. Moreover, it can greatly reduce communication errors occurring in a typical product development process. A case study about VP of an MP3 player is given to show the usefulness of the proposed VP system.

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Fabrication of Transition-metal-incorporated TiO2 Nanopowder by Flame Synthesis (화염법에 의한 천이금속 첨가 이산화티타늄 나노분말의 제조)

  • Park Hoon;Jie Hyunseock;Lee Seung-Yong;Ahn Jae-Pyoung;Lee Dok-Yol;Park Jong-Ku
    • Journal of Powder Materials
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    • v.12 no.6 s.53
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    • pp.399-405
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    • 2005
  • Nanopowders of titanium dioxide $(TiO_2)$ incorporating the transition metal element(s) were synthesized by flame synthesis method. Single element among Fe(III), Cr(III), and Zn(II) was doped into the interior of $TiO_2$ crystal; bimetal doping of Fe and Zn was also made. The characteristics of transition-metal-doped $TiO_2$ nanopowders in the particle feature, crystallography and electronic structures were determined with various analytical tools. The chemical bond of Fe-O-Zn was confirmed to exist in the bimetal-doped $TiO_2$ nanopowders incorporating Fe-Zn. The transition element incorporated in the $TiO_2$ was attributed to affect both Ti 3d orbital and O 2p orbital by NEXAFS measurement. The bimetal-doped $TiO_2$ nanopowder showed light absorption over more wide wavelength range than the single-doped $TiO_2$ nanopowders.

Metascreen Analysis Using Generalized Sheet Transition Conditions(GSTCs) and Babinet's Principle (Babinet의 원리와 Generalized Sheet Transition Conditions(GSTCs)를 이용한 메타스크린 해석)

  • Lee, Sun-Gyu;Lee, Jeong-Hae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.9
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    • pp.685-692
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    • 2018
  • Using Babinet's principle and generalized sheet transition conditions(GSTCs), an analysis method for metascreens is proposed. First, the relation of a complementary screen between a metafilm and metascreen with the same dimensions was confirmed using Babinet's principle. These properties were verified by comparing the reflection coefficient of the patch and the transmission coefficient of the mesh. The patch and mesh are the basic structures of metafilms and metascreens, respectively. Based on these findings, it is also confirmed that the reflection coefficient of the patch surface calculated by GSTCs has the same value as the transmission coefficient of the mesh surface. It is expected that the proposed analysis methods can be applied to the magnitude, phase, and polarization of electromagnetic waves in the various unit structures of a given metasurface.

True Random Number Generator based on Cellular Automata with Random Transition Rules (무작위 천이규칙을 갖는 셀룰러 오토마타 기반 참난수 발생기)

  • Choi, Jun-Beak;Shin, Kyung-Wook
    • Journal of IKEEE
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    • v.24 no.1
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    • pp.52-58
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    • 2020
  • This paper describes a hardware implementation of a true random number generator (TRNG) for information security applications. A new approach for TRNG design was proposed by adopting random transition rules in cellular automata and applying different transition rules at every time step. The TRNG circuit was implemented on Spartan-6 FPGA device, and its hardware operation generating random data with 100 MHz clock frequency was verified. For the random data of 2×107 bits extracted from the TRNG circuit implemented in FPGA device, the randomness characteristics of the generated random data was evaluated by the NIST SP 800-22 test suite, and all of the fifteen test items were found to meet the criteria. The TRNG in this paper was implemented with 139 slices of Spartan-6 FPGA device, and it offers 600 Mbps of the true random number generation with 100 MHz clock frequency.

Polymorphic Phase Transition and Temperature Coefficient of Capacitance of Alkaline Niobate Based Ceramics

  • Bae, Seon-Gi;Shin, Hyea-Gyiung;Sohn, Eun-Young;Im, In-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.2
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    • pp.78-81
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    • 2013
  • $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ (hereafter, No excess NKN) ceramics and $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ with excess $(Na_{0.5}K_{0.5})NbO_3$ (hereafter, Excess NKN) were fabricated by the conventional solid state sintering method, and their phase transition properties and dielectric properties were investigated. The crystalline structure of No excess NKN ceramics and Excess NKN ceramics were shown characteristics of polymorphic phase transition (hereafter, PPT), especially shift from the orthorhombic to tetragonal phase by increasing sintering temperature range from $1,100^{\circ}C$ to $1,200^{\circ}C$. Also, the temperature coefficient of capacitance (hereafter, TCC) of No excess NKN ceramics and Excess NKN ceramics from $-40^{\circ}C$ to $100^{\circ}C$ was measured to evaluate temperature stability for applications in cold regions. The TCC of No excess NKN and Excess NKN ceramics showed positive TCC characteristics at a temperature range from $-40^{\circ}C$ to $100^{\circ}C$. Especially, Excess NKN showed a smaller TCC gradient than those of Excess NKN ceramics in range from $-40^{\circ}C$ to $100^{\circ}C$. Therefore, NKN piezoelectric ceramics combined with temperature compensated capacitor having negative temperature characteristics is desired for usage in cold regions.

A Study on the Electronic Money's present situation & after development direction at Electronic Commerce's times (EC시대(時代) 전자화폐(電子貨幣)의 현황(現況)과 향후(向後) 개발방향(開發方向)에 관한 소고(小考))

  • Park, Young-Tae
    • International Commerce and Information Review
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    • v.1 no.1
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    • pp.227-251
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    • 1999
  • The realization of the Internet and Electronic Commerce through the progress development of the information & communication has changed the transition of the financial settlement system all of the world. And Electronic Commerce has becoming the most important tools to decide the value from the real money, existing bills, coins to the Electronic Money. Electronic Money is very useful materials with Electronic Wallet at cyber times in the future. So that reason, I studied Electronic Money's present situation & after development direction in Korea. And the purpose of this paper is to introduce Electronic Money's modem definition and to analysis the common use situation, operation at home and abroad at Electronic Commerce times. In add to investigated advanced countries Electronic Money utilization and drawed out current events point. So I suggest to this like point, in honour of Electronic Money's common use in Korea. First to establish universality. Second, to make various terminals and the powerful networking structure. Third, to establish stability. Fourth, renovating the system goes side by side. Futhermore, to develop Electronic Money's, it is necessary to make skilled labour and to learn foreign advanced technology.

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A study on characteristics of crystallization according to changes of top structure with phase change memory cell of $Ge_2Sb_2Te_5$ ($Ge_2Sb_2Te_5$ 상변화 소자의 상부구조 변화에 따른 결정화 특성 연구)

  • Lee, Jae-Min;Shin, Kyung;Choi, Hyuck;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.80-81
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    • 2005
  • Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a sample of PRAM with thermal protected layer. We have investigated the phase transition behaviors in function of process factor including thermal protect layer. As a result, we have observed that set voltage and duration of protect layer are more improved than no protect layer.

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The Phase Transition with Electric Field in Ternary Chalcogenide Thin Films

  • Yang, Sung-Jun;Lee, Jae-Min;Shin, Kyung;Chung, Hong-Bay
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.5
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    • pp.185-188
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    • 2004
  • Phase transitions from the amorphous to crystalline states, and vice versa, of GST(GeSbTe) and AST(AsSbTe) thin films by applying electrical pulses have been studied. These materials can be used as nonvolatile memory devices. The thickness of ternary chalcogenide thin films is approximately 100 nm. Upper and lower electrodes were made of AI. I-V characteristics after impressing the variable pulses to GST and AST films. Tc(crystallization temperature) of AST system is lower than that of the GST system, so that the current pulse width of crystallization process can be decreased.

The study of conductivity transition on chalcogenide thin films (칼코게나이드 박막에서의 conductivity 변화에 관한 연구)

  • Yang, Sung-Jun;Shin, Kyung;Park, Jung-Il;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.112-115
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    • 2003
  • There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. $T_c$(crystallization temperature) is confirmed by measuring the conductivity with the varying temperature. The sample is heated on the hotplate and slow down to the room-temperature. We prepared Te based alloy bulk. The materials can be used for nonvolatile random access memory.

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