• 한국초전도학회:학술대회논문집
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• v.16
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• pp.26-26
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• 2006

• Proceedings of the Korean Magnestics Society Conference
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• 1999.04a
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• pp.50-50
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• 1999

• Proceedings of the Korean Magnestics Society Conference
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• 1998.10a
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• pp.94-94
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• 1998

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.17-17
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• 2005

• Polymer Science and Technology
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• v.22 no.3
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• pp.248-255
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• 2011

• Korean Institute of Interior Design Journal
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• no.18
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• pp.31-37
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• 1999

This study aims to provide architectural basis of the new space planning in university library and anticipate direction in future. This study is to analyze the spatial transition in the existing facility, based on field observation of the domestic university library and on theoretical data from the related article. The result that include a transition of the existing facility and the present is as following as below. 1) Spatial transitions by networking are making specific system room. The minimum area of this specific system room is 33.95$m^2$. 2) Spatial transition by information service is forming computer room. the minimum area of a environmental carrel, which is possibly located to computer room, is 2.98~3.42$m^2$. 3) Spatial transition by spreading multimedia information is to make the multimedia information is to make the multimedia room. It is necessary to independent, flexibility, and extensionable space. 4) Library interior spatial transition by developing information technology is prospected that in case of reading room, office enlarge the scale, in case of stack decrease the scale. The university library must be kept up their function and also be functioned as electronic library which serve new information.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.143.2-143.2
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• 2013

Nanomechanical and electrical properties of vanadium dioxide (VO2) thin films across thermal-driven phase transition are investigated with ultra-high vacuum atomic force microscopy. VO2 thin films have been deposited on the n-type heavily doped silicon wafer by pulsed laser deposition. X-ray diffraction reveals that it is textured polycrystalline with preferential orientation of (100) and (120) planes in monoclinic phase. As the temperature increases, the friction decreased at the temperature below the transition temperature, and then the friction increased as increasing temperature above the transition temperature. We attribute this observation to the combined effect of the thermal lubricity and electronic contribution in friction. Furthermore, the dependence of nanoscale conductance on the local pressure was indicated at the various temperatures, and the result was discussed in the view of pressure-induced metal-insulator transition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.416-419
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• 2003

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. We studied of phase-change according to temperature and voltage in chalcogenide thin film base on $Ge_2Sb_2Te_5$. Searching for Tg(Glass transition temperature) temperature controlled on hotplate with RT quenching. We measure I-V characteristic through out bottom electrode(ITO) and top electrode(Al) between $Ge_2Sb_2Te_5$. And compared with I-V characteristics after impress the variable stress.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.373-373
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• 2014

Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1693-1695
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• 2000

In this paper with deposition 8A5H induce monolayers which has photoisomerization response displacement current was detected by photoisomerization and the amplifier was designed in order to amplify detected displacement current and then secondary current characteristic was measured. The experimental results are as following: In case of ultraviolet(${\lambda}_1$) and visible(${\lambda}_2$) irradiation on 8A5H induce monolayers depositioned on board the peak of current was detected about 9[fA]. Displacement current amplified as secondary transition form was measured but there was any particular reaction for detailed and accurate measurement restruction of the circuit is required.