• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.11
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• pp.59-65
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• 2015

By harnessing the thermal hysteresis behavior of vanadium dioxide($VO_2$), we demonstrated multi-resistance states in a two-terminal electronic device based on a $VO_2$ thin film by using a 966nm infrared laser diode as an excitation light source for resistance modulation. Before stimulating the device using 966nm laser pulses, the thermal hysteresis behavior of the device resistance was measured by using a temperature chamber. After that, the $VO_2$ device was thermally biased at ${\sim}71.6^{\circ}C$ so that its temperature fell into the thermal hysteresis region of the device resistance. Six multi-states of the device resistance could be obtained in the fabricated $VO_2$ device by five successive laser pulses with equal 10ms duration and increasing power. Each resistance states were maintained while the temperature bias was applied. And, the resistance fluctuation level was within 2.2% of the stabilized resistance and decreased down to less than 0.9% of the stabilized resistance 5s after the illumination.

• Bulletin of the Korean Chemical Society
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• v.17 no.4
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• pp.324-330
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• 1996

We examined the formal oxidation states of Pb and Cu in the Pb2CuO4 slab of Pb2Sr2ACu3O8(A=Y1-xCaxor Nd1-xSrx) and their possible changes by oxygen incorporation in the Cu layer of the slab by performing tight-binding band electronic structure calculations on the Pb2CuO4+δ slab. Our results show that the most likely oxidation state of Pb is +2 and that of Cu is +1 for the Pb2CuO4 slab prior to oxidation. With small δ values, the oxygen incorporation occurs by the formation of such chain fragments as in YBa2Cu3O7-y along the a+b axis. The four-coordinate Cu atoms in the chain fragments are in the +3 oxidation states. For values of δ larger than 0.5, however, an additional oxygen (Oad) goes to the site along the b axis to form short Pb-Oad distances oxidizing Pb2+ to Pb4+. This change in the Pb oxidation state leads to the suppression of superconductivity due to the decrease of holes in the CuO2 layer.

• Journal of the Korean Chemical Society
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• v.57 no.6
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• pp.677-683
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• 2013

A theoretical study of the electronic structures of $TiC_{1-x}$ and $Ti_{1-x}W_xC$ (x = 0, 0.25) is presented. The density of states and crystal orbital overlap population calculations were used to interpret variations of elastic properties induced by carbon vacancies and alloying substitutions. Our results show why the introduction of vacancies into TiC reduces bulk moduli, while W substitution at a Ti site increases the elastic modulus. The effect of the point defects on the bonding in TiC is investigated by means of extended Huckel tight-binding band calculations.

• Bulletin of the Korean Chemical Society
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• v.33 no.3
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• pp.997-1008
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• 2012

This work provides an alternative derivation of third order response functions in four wave mixing spectroscopy of multichromophoric macromolecular systems considering only single exciton states. For the case of harmonic oscillator bath linearly and diagonally coupled to exciton states, closed form expressions showing all the explicit time dependences are derived. These expressions can provide more solid physical basis for understanding 2-dimensional electronic spectroscopy signals. For more general cases of system-bath coupling, the quantum master equation (QME) approach is employed for the derivation of multistep time evolution equations for Green function-like operators. Solution of these equations is feasible at the level of 2nd order non-Markovian QME, and the new approach can account for inter-exciton coupling, dephasing, relaxation, and non-Markovian effects in a consistent manner.

• Bulletin of the Korean Chemical Society
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• v.24 no.8
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• pp.1111-1118
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• 2003

We present one-color nonlinear wavepacket interferometry (WPI) signal calculations for a system of two electronic levels and one vibrational degree of freedom. We consider two cases, a displaced harmonic oscillator system, which can be treated analytically, and a model photodissociative system, whose WPI signal must be calculated by numerical wavepacket propagation. We show how signals obtained with different combinations of intrapulse-pair phase shifts can be combined to isolate the complex-valued overlap between a given onepulse target wavepacket and a variable three-pulse reference wavepacket. We demonstrate that with a range of inter- and intrapulse-pair delays the complex overlaps and variable reference states can be used to reconstruct the target wavepacket. We compare our results with previous methods for vibronic state reconstruction based on linear WPI and discuss further generalizations of our method.

• Journal of Photoscience
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• v.10 no.1
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• pp.165-173
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• 2003

m-Phenylene-linked biscarbenes, bisnitrenes and carbenonitrenes can be formed photochemically from appropriate nitrogenous precursors. Generation of such reactive intermediates under matrix-isolation conditions allows for their characterization by spectroscopic techniques such as ESR, UV /vis and IR. The latter method is also useful in characterizing secondary products derived from these reactive intermediates. Computational chemistry methods complement experimental IR data, aiding, thus, in identification of such compounds. In addition electronic structure calculations help in developing qualitative and semi-quantitative models, which can be useful in predicting ground-state multiplicities. The parent systems of m-phenylene-linked carbenes and nitrenes have high-spin ground states, but a switching to lower multiplicity can be achieved by chemical substitution. The ground state and various low-lying excited states of m-phenylenecarbenonitrenes can be reasonably approximated by simple valence-bond depictions. Finally, m-phenylenecarbenonitrenes are photoreactive in the inert matrix isomerizing to cyclopropene derivatives.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.13-16
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• 1998

An anomalous current characteristics which show the superposition of a low current level and high current level at the subthreshold region when SONOSFETs are in memory states were investigated. We have assumed this phenomena were resulted from the effect of parasitic transistors by LOCOS isolation and were modeled to a parallel equivalent circuit of one memory transistor and two parasitic transistors. Theoretical curves are well fitted in measured log I$_{D}$-V$_{G}$ curves independent of channel width of memory devices. The difference between low current level and high current level is apparently decreased with decrease of channel width of devices because parasitic devices dominantly contribute to the current conduction with decrease of channel width of memory devices. As a result, we concluded that the LOCOS isolation has to selectively adopt in the design of process for charge-trap type NVSM.VSM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.121-122
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• 2006

Single crystal of $CdIn_2Te_4$ were grown by the Bridgman method without using seed crystals. From photocurrent measurements, its was found that three peaks, A, B, and C, correspond to the instrinsic transition from the valence band states of ${\Gamma}_7$(A), ${\Gamma}_6$(B), and ${\Gamma}_7$(C) to the conducton band states of ${\Gamma}_6$, respectively. Crystal field splitting and spin orbit splitting were found to be at 0.2360 eV and 0.1119 eV, respectively, from found to be photocurrent spectroscopy.

• Applied Science and Convergence Technology
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• v.26 no.3
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• pp.43-46
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• 2017

Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide ($H_2O_2$) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.370-370
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• 2010

The effects of adding higher-valence impurities on the bipolar resistive switching characteristics of Pt/$NiO_{1+x}$/TiN MIM stacks and physical properties were investigated. $NiO_{1+x}$ films with 14% W deposited at 20% oxygen partial pressure exhibited the bipolar resistance switching characteristics in Pt/$NiO_{1+x}$/TiN MIM stacks, while $NiO_{1+x}$ films with 8.2% W show unipolar resistance switching behavior. The relationship of W-doping and the crystallinity was studied by X-ray diffraction. The metallic Ni contents and $WO_x$ binding states with W amount was investigated by XPS. Our result showed that the metallic Ni, $WO_x$ binding states, and crystallinity in $NiO_{1+x}$ played an important role on the bipolar resistive switching.