• Title/Summary/Keyword: Electronic states

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Indirect Adaptive Fuzzy Observer Design

  • Yang, Jong-Kun;Hyun, Chang-Ho;Kim, Jae-Hun;Kim, Eun-Tai;Park, Mi-Gnon
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 2004.10a
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    • pp.192-196
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    • 2004
  • This paper proposes an alternative observation scheme, T-S fuzzy model based indirect adaptive fuzzy observer. Nonlinear systems are represented by fuzzy models since fuzzy logic systems are universal approximators. In order to estimate the unmeasurable states of a given nonlinear system, T-S fuzzy modeling method is applied to get the dynamics of an observation system. T-S fuzzy system uses the linear combination of the input state variables and the modeling applications of them to various kinds of nonlinear systems can be found. The adaptive fuzzy scheme estimates the parameters comprising the fuzzy model representing the observation system. The proposed indirect adaptive fuzzy observer based on T-S fuzzy model can cope with not only unknown states but also unknown parameters. In the process of deriving adaptive law, the Lyapunov theory and Lipchitz condition are used. To show the performance of the proposed observation method, it is applied to an inverted pendulum on a cart.

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Indirect Adaptive Fuzzy Observer Design

  • Yang, Jong-Kun;Hyun, Chang-Ho;Kim, Jae-Hun;Kim, Eun-Tai;Park, Mignon
    • Journal of the Korean Institute of Intelligent Systems
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    • v.14 no.7
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    • pp.927-933
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    • 2004
  • This paper proposes an alternative observation scheme, T-S fuzzy model based indirect adaptive fuzzy observer. Nonlinear systems are represented by fuzzy models since fuzzy logic systems are universal approximators. In order to estimate the unmeasurable states of a given nonlinear system, T-S fuzzy modeling method is applied to get the dynamics of an observation system. T-S fuzzy system uses the linear combination of the input state variables and the modeling applications of them to various kinds of nonlinear systems can be found. The adaptive fuzzy scheme estimates the parameters comprising the fuzzy model representing the observation system. The proposed indirect adaptive fuzzy observer based on T-S fuzzy model can cope with not only unknown states but also unknown parameters. In the process of deriving adaptive law, the Lyapunov theory and Lipchitz condition are used. To show the performance of the proposed observation method, it is applied to an inverted pendulum on a cart.

Fabrication of low temperature metal dot nano-floating gate memory using ELA Poly-Si thin film transistor (Poly-Si 기판을 이용한 저온 공정 metal dot nano-floating gate memory 제작)

  • Koo, Hyun-Mo;Shin, Jin-Wook;Cho, Won-Ju;Lee, Dong-Uk;Kim, Seon-Pil;Kim, Eun-Kyu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.120-121
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    • 2007
  • Nano-floating gate memory (NFGM) devices were fabricated by using the low temperature poly-Si thin films crystallized by ELA and the $In_2O_3$ nano-particles embedded in polyimide layers as charge storage. Memory effect due to the charging effects of $In_2O_3$ nano-particles in polyimide layer was observed from the TFT NFGM. The post-annealing in 3% diluted hydrogen $(H_2/N_2)$ ambient improved the retention characteristics of $In_2O_3$ nano-particles embedded poly-Si TFT NFGM by reducing the interfacial states as well as grain boundary trapping states.

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Infrastructure for Electronic Financial Transactions in Korea: Current Status and Policy Issues (국내 금융거래전자화를 위한 하부구조 구축: 현황 및 정책과제)

  • 김병연;정철용
    • The Journal of Society for e-Business Studies
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    • v.2 no.1
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    • pp.153-185
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    • 1997
  • As the computer-based electronic processing of financial transactions become more and more popular in financial areas, the need for more efficient and secure infrastructure has been increased. This Paper addresses the current status and Policy issues in building such infrastructure for electronic financial transactions in Korea. We examine our financial computer networks, electronic payment and clearing systems, standardization, and related laws, comparing with those in United States, Japan, and European countries and suggest policy recommendation in each area.

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The Study on the Trap Density in Thin Silicon Oxide Films

  • Kang, C.S.;Kim, D.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04b
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    • pp.43-46
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    • 2000
  • In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of $10^{11}\sim10^{21}$[states/eV/$cm^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}\sim10^{13}$[states/eV/$cm^2$]. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

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Effect of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs (4H-SiC DMOSFETs의 계면 전하 밀도에 따른 스위칭 특성 분석)

  • Kang, Min-Seok;Moon, Kyoung-Sook;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.6
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    • pp.436-439
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    • 2010
  • SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

T-S Fuzzy Model Based Indirect Adaptive Fuzzy Observer Design

  • Hyun Chang-Ho;Kim You-Keun;Kim Euntai;Park Mignon
    • Proceedings of the IEEK Conference
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    • summer
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    • pp.348-353
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    • 2004
  • This paper proposes an alternative observation scheme, T-S fuzzy model based indirect adaptive fuzzy observer. Nonlinear systems arc represented by fuzzy models since fuzzy logic systems arc universal approximators. In order to estimate the unmeasurable states of a given nonlinear system, T-S fuzzy modeling method is applied to get the dynamics of an observation system. T-S fuzzy system uses the linear combination of the input state variables and the modeling applications of them to various kinds of nonlinear systems can be found. The adaptive fuzzy scheme estimates the parameters comprising the fuzzy model representing the observation system. The proposed indirect adaptive fuzzy observer based on T-S fuzzy model can cope with not only unknown states but also unknown parameters. In the process of deriving adaptive law, the Lyapunov theory and Lipchitz condition are used. To show the performance of the proposed observation method, it is applied to an inverted pendulum on a cart.

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