• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.56-56
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• 2010

Using first-principles density-functional theory calculations, we find dramatically different electronic states in the C chains generated on the H-terminated C(111) surface, depending on their length and parity. The infinitely long chain has $\pi$ electrons completely delocalized over the chain, yielding an equal C-C bond length. As the chain length becomes finite, such delocalized $\pi$ electrons are transformed into localized ones. As a result, even-numbered chains exhibit a strong charge-lattice coupling, leading to a bond-alternated structure, while odd-numbered chains show a ferrimagnetic spin ordering with a solitonlike structure. These geometric and electronic features of infinitely and finitely long chains are analogous to those of the closed (benzene) and open (polyacetylene) chains of hydrocarbons, respectively.

• Journal of Magnetics
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• v.1 no.1
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• pp.4-8
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• 1996

Employing the LMTO band method, we have studied electronic and magnetic properties of Fe/Si/Fe trilayer in which the z-direction is chosen to be (111) direction of FeSi with B2 phase, We have also determined electronic structure of bulk FeSi, as a reference material. The ground state of FeSi is paramagnetic insulator with a band gap of 0.05 eV. Band structures of Fe/Si/Fe with varying the thickness of the spacer layer reveal that the spacer layer is metallic, and the states along the growth direction do not disperse much reflecting a two-dimensional nature. Magnetic moment of Fe atom in the interfacial layer of Fe/Si/Fe is reduced a lot as compared to the bulk value, suggesting a strong hybridization between Fe and Si states. The geometry of the Fermi surface indicates that the magnetic coupling period of ~8ML (monolayers) in Fe/Si/Fe is explained with a short Fermi wave vector of bcc Si.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2193-2196
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• 1998

Cellular automata are dynamical systems in which space and time are discrete, where each cell has a finite number of states and updates its states by interactive rules among the cell-neighborhood. From the characteristics of self-reproduction and self- organization, it is possible to create a neural network which has the specific patterns or structures dynamically. CAM-Brain is a kind of such neural network system which evolves its structure by adopting evolutionary computations like genetic algorithms (GA). In this paper, we suggest the evolution strategies for the structure of neural networks based on cellular automata.

• Journal of the Korean Institute of Telematics and Electronics
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• v.10 no.1
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• pp.27-35
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• 1973

The electronic states of carrier capture centers in reverse biased point-contact germanium diodes have been investigated through the tomperature-and reverse voltage-characteristics of burst noise. The measured values of the time constants wllich represent the electronic states of the centers are extended up to greater than ten minutes, which are about 10,000 times greater than the ones obtained by other investigators. From the relation between these time constants and temperatures, the quasi-Peymi level and the activation energy of the center have been obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.1-4
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• 2000

We have performed ab initio pseudopotential electronic structure calculations for various edge geometries of the (n,n) singlewall nanotube with or without applied fields. Among the systems studied, the one with the zigzag edge exposed by a slant cut is found to be the most favorable for the emission due to the existence of unpaired dangling bond states around the Fermi level. The next favorable geometry is the capped nanotube where $\pi$-bonding states localized at the cap and pointing to the tube axis direction occur at the Fermi level. A scaling rule of the induced field linear in the aspect ratio of the tube is also obtained.

• Korea Trade Review
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• v.46 no.1
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• pp.113-134
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• 2021

This study analyzed the centrality of the GVCs network and the value-added-based production structure of the electrical and electronic industries using ADB-MIRO and social network analysis methods. According to the analysis, the centrality and power of the GVSc intermediate goods network were differentiated into China, the United States, and the EU due to the advancement of industrial structure in Asia. In the 2000 network, the United States and Japan had a very strong influence in all aspects, including connectivity and strength. However, in 2017, China's power index rose to number one among 62 countries in the network. Furthermore, this study presented strategic implications of the Korean electrical and electronic industries to respond to the reorganization of GVSs based on the analysis results.

• Proceedings of the CALSEC Conference
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• 2001.08a
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• pp.439-448
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• 2001

Data Alignment is achieved when all trading partners information systems are maintained automatically synchronising with the suppliers information systems on a continuing basis. Electronic catalogues facilitate the ongoing synchronisation of data between trading partners and large retailers in United States and Canada use electronic catalog in order to get rid of non-value added paperwork and manual reconciliation. Data Alignment will dramatically improve the effectiveness of E-Commerce and Supply Chain initiatives including electronic Marketplaces, Collaborative Planning and Forecasting and continuous replenishment processes.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.328-332
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• 2014

Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.166-166
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• 2000

We studied electronic structure of magnetic semiconductors EuO, EuS, and EuTe. The photoemission spectra show localized Eu 4f states and broad anion p bands. As the size of anion increases from oxygen to tellurium, anion p band width increases and eventually overlaps Eu 4f states. Hence in EuO and EuS, Eu 4f states are the highest occupied stated lying above anion p band, while Te 5p band spreads widely over Eu 4f states to become valence band maximum in EuTe. It was also observed that Eu 4f states have width of 0.7eV and dispersion of 0.2eV in EuS by angle resolved photoemission spectroscopy. The width of the 4f spectra mainly originates from atomic multiplets, but the much larger dispersion than that of Eu metal is due to p-f mixing.

• Advances in nano research
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• v.2 no.3
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• pp.157-172
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• 2014

The three-dimensional Nano-Electronic Modeling toolkit (NEMO 3-D) is an open source software package that allows the atomistic calculation of single-particle electronic states and optical response of various semiconductor structures including bulk materials, quantum dots, impurities, quantum wires, quantum wells and nanocrystals containing millions of atoms. This paper, first, describes a software module introduced in the NEMO 3-D toolkit for the calculation of electronic bandstructure and interband optical transitions in nanowires having wurtzite crystal symmetry. The energetics (Hamiltonian) of the quantum system under study is described via the tight-binding (TB) formalism (including $sp^3$, $sp^3s^*$ and $sp^3d^5s^*$ models as appropriate). Emphasis has been given in the treatment of surface atoms that, if left unpassivated, can lead to the creation of energy states within the bandgap of the sample. Furthermore, the developed software has been validated via the calculation of: a) modulation of the energy bandgap and the effective masses in [0001] oriented wurtzite nanowires as compared to the experimentally reported values in bulk structures, and b) the localization of wavefunctions and the optical anisotropy in GaN/AlN disk-in-wire nanowires.