• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.34-35
• /
• 2007

A high Tc superconducting with a nominal composition of BSSCCO was prepared by the citarte method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12h is not in the amorphous state as expected but in a crystalline state. X-ray diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor. After pyrolysis at $400^{\circ}C$ and calcination at $840^{\circ}C$ for 4h. the (001) peak of the high Tc phase was cleary observed.

• Bulletin of the Korean Chemical Society
• /
• 제17권5호
• /
• pp.452-457
• /
• 1996

The effects caused by the ionization on the electronic structure and geometry on C60 are studied by the modified Su-Schriffer-Heeger (SSH) model Hamiltonian. After the ionization of C60, the bond structure of the singly charged C60 cation is deformed from Ih symmetry of the neutral C60 to D5d, C1, and C2, which is dependent upon the change of the electron-phonon coupling strength. The electronic structure of the C60+ cation ground state undergoes Jahn-Teller distortion in the weak electron-phonon coupling region, while self-localized states occur in the intermediate electron-phonon region, but delocalized electronic states appear again in the strong electron-phonon region. In the realistic strength of the electron-phonon coupling in C60, the bond structure of C60+ shows the layer structure of the bond distortion and a polaron-like state is formed.

• 자연과학논문집
• /
• 제17권1호
• /
• pp.39-50
• /
• 2006

서로 수직으로 편광된 이중모드 고체레이저에서는 두 개의 이완 진동수가 존재한다. 이런 이동 모드 고체레이저를 변조시켜 주면 혼돈 등의 복잡한 현상이 일어날 수 있다. 본 논문에서는 수직으로 편광된 이중 모드 고체레이저에 대해 빛과의 상호작용에서 비등방성을 고려하여 맥스웰-블로흐 방정식을 유도하고, 이를 사용하여 복잡한 비선형 동력학적인 현상을 설명하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.14-15
• /
• 2009

Insulated Gate Bipolar Transistor(IGBTs) are widely used in power device industry. However, to improve the breakdown voltage, IGBTs are suffered from increasing on-state voltage drop due to structural design. In this paper, the new structure is proposed to solve this problem. The proposed structure has double p-floating layer inserted in n-drift layer. The p-floating layers improve the breakdown voltage compared to conventional IGBT without change of other electrical characteristics such as on-state voltage drop and threshold voltage. this is because the p-floating layers expand electric field distribution at blocking state. A electrical characteristic of proposed structure is analyzed by using simulators such as TSUPREM and MEDICI. As a result, on-state voltage drop and threshold voltage are same to a conventional TIGBT, but breakdown voltage is improved to 16%.

• 제어로봇시스템학회논문지
• /
• 제7권11호
• /
• pp.953-957
• /
• 2001

This paper is concerned with a transfer alignment method for the SDINS under ship motions. Major error sources of transfer alignment are data transfer time-delay, lever-arm velocity and ship body flexure. Specifically, to reduce alignment errors induced by measurement time-delay effects, the error compensation method through delay state augmentation is suggested. A linearized error model for the velocity and attitude matching transfer alignment system is first derived by linearizing the nonliner measurement equation with respect to its time delay and augmenting the delay state into the conventional linear state equations. And then it is shown via observability analysis and computer simulations that the delay state can be estimated and compensated during ship motions resulting in considerably less alignment errors.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
• /
• pp.49-50
• /
• 2008

OCB mode has advantages such as fast response time and wide viewing angle. But it has inevitable shortcoming which initial splay state must be changed to bend state. To overcoming this problem, OCB cell filled LC with RM monomer was cured by UV when voltage applied. Through previously mentioned methods, even if electric field is none, bend state was made by stabilized LC director. In this paper, we investigated the electric characteristics of polymer stabilized OCB mode.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
• /
• pp.20-22
• /
• 1997

In ours study, we investigated the various properties in Te-light doped $Sb_{85}$G $e_{15}$ thin films such as the change of reflectance and transmittance according to phase change from amorphous to crystalline states In all films the transmittance was decreased, but the reflectance was increased by annealing. Particularly, the reflectance between as- deposited state and annealed state showed the largest change in the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film at 780nm, which was about 40% in as-deposited state and about 70% in annealed state. Therefore, it might be considered that the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film is recording medium showing to a good optical properties if it is used to optical recording of the phase change type. change type.ype.

• 한국전기전자재료학회논문지
• /
• 제14권1호
• /
• pp.84-92
• /
• 2001

In this papers, we proposed the new method in order to diagnosis aging state of transformers. For wavelet transform, Daubechies filter is used, we can obtain wavelet coefficients which is used to extract feature of statistical parameters (maximum value, average value, dispersion skewness, kurtosis) about each acoustic emission signal. Also, these coefficients are used to identify normal and fault signal of internal partial discharge in transformer. As improved method for classification use neural network. Extracted statistical parameters are input into an back-propagation neural network. The number of neurons of hidden layer are obtained through Result of Cross-Validation. The network, after training, can decide whether the test signal is early aging state, alst aging state or normal state. In quantity analysis, capability of proposed method is superior to compared that of classical method.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.63-64
• /
• 2006

Here we present detailed simulation results of trench field stop IGBTs. Besides the reduced on-state voltage drop there is also an Increase of forward blocking voltage. A trench gate IGBT has low on-state voltage drop mainly due to the removal of the JFET region and a field stop IGBT has high forward blocking voltages due to the trapezoidal field distribution under blocking condition. We have simulated the static characteristics of TIGBT with field stop technology by 2D simulator(MEDICI). The simulated result of forward blocking voltage and on-state voltage drop is about 1,408V and 1.3V respectively at $110{\mu}m$ N-drift thickness.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
• /
• pp.295-298
• /
• 1996

In this study, we have fabricated all solid state electrochromic devices using WO$_3$ film as the working electrode, V$_2$O$\_$5/ film as the counter electrode and PEO-LiClO$_4$-PC film as the solid electrolyte. The WO$_3$ thin films for working electrode and V$_2$O$\_$5/ thin films for counter electrode were deposited onto ITO glass by vacuum evaporation and were shown good electrochromic and state properties after 1x10$\^$5/ cycles. PEO-LiClO$_4$-PC polymer electrolyte can easily be formed into thin films, do not absorb in the visible region of the light. Therefore, such electrolyte have electrochromic properties suitable for large-scale all solid-state electrochromic devices. All solid-staeelectrochromic devices fabricated in this polymer electrolyte have optical modulation of 20%∼30% at 1.5 V.