• 한국전자통신학회논문지
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• 제9권12호
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• pp.1389-1396
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• 2014

본 논문에서는 전통적인 짜맞춤 기법을 숙련된 기술 없이 앱 상에서 부재의 사이즈와 장부의 개수만 결정하면 전통 가구를 제작할 수 있도록 하였다. 그동안 전문 기술자들에 의해 수작업으로 이루어지던 가구의 설계도면을 CAD를 사용하여 생성함으로써 효율적이며, 융통성 있는 가구의 제작이 가능하게 하였다. 또한 CNC 설계 도면과 3D 모델링된 56종의 STL파일들은 앱을 통해 서비스되며 수시로 업데이트가 가능하도록 하기 위해 하이브리드앱을 사용하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.45-48
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• 2002

Poly(3-hexylthiophene) or P3HT based organic thin film transistor (OTFT) array was fabricated on flexible poly carbonate substrates and the electrical characteristics were investigated. As the gate dielectric, a dual layer structure of polyimide-$SiO_2$ was used to improve the roughness of $SiO_2$ surface and further enhancing the device performance and also source-drain electrodes were $O_2$ plasma treated for improvement of the electrical properties, such as drain current and field effect mobility. For the active layer, polymer semiconductor, P3HT layer was printed by contact-printing and spin-coating method. The electrical properties of OTFT devices printed by both methods were evaluated for the comparison. Based on the experiments, P3HT-based OTFT array with field effect mobility of 0.02~0.025 $cm^{2}/V{\cdot}s$ and current modulation (or $I_{on}/I_{off}$ ratio) of $10^{3}\sim10^{4}$ was fabricated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.271-271
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• 2010

$BaTiO_3$(BT) has high permittivity so that has been applied to dielectric and insulator materials in 3D system-level package integration. In order to achieve excellent performance of device, the BT layer should be highly dense. In this study, BT thick films were prepared by the inkjet printing method. And these films were cured at $280^{\circ}C$ after infiltration of polymer resin. As a result, we have successfully fabricated not only the inkjet-printed hybrid BT film but also metal-insulator-metal(MIM) capacitor without sintering process. Changes in the dielectric constant of BT hybrid film with particle size and packing density were investigated. The dielectric constant was increased with increasing packing density and particle size. Further, the BT hybrid film using two different size particles had even higher packing density and dielectric constant.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.541-544
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• 2004

Multi- wall carbon nanotubes(MWNTs) were synthesized by thermal chemical vapor deposition. The paste for screen printing was composed of MWNTs, organic vehicle and glass frit. Carton nanotube paste was screen-printed on ITO(indium tin oxide) deposited soda lim을 glass, and then heat treatment was performed. Before the surface treatment, turn on field of derive was 2.6 V/$\mu\textrm{m}$. After the surface treatment, the value was changed into 1.8 V/$\mu\textrm{m}$. The anode current of the derive with 2.83 V/$\mu\textrm{m}$(turn on field) was changed 4 $\mu\textrm{A}$ into 390 $\mu\textrm{A}$ at 1,700 V. Adsorption effect of MWNTs onto phosphor of anode plate was observed by the field emission measurement and resulted in bad effects on properties of devices lifetime and emission lighting.

• 한국전기전자재료학회논문지
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• 제19권11호
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• pp.1014-1019
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• 2006

The influence of the number of solution coatings on the densification of the PZT thick films was studied. PZT powder and PZT precursor solution was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The powder and solution of composition were (A) PZT(80/20)/PZT(20/80), (B) PZT(70/30)/PZT(30/70) and (C) PZT(60/40)/PZT(40/60), (D) PZT(52/48)/PT. The coating and drying procedure was repeated 4 times. And then the PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 moth and the number of coating was repeated from 0 to 6. The porosity of the thick films was decreased with increasing the number of coatings and the PZT thick films with 6-times coated showed the dense microstructure and thickness of about $60{\mu}m$. A grain size was increased with increasing the coating number. All PZT thick films showed the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric constant of PZT thick films was improved 30-100% as the number of coatings.

• 한국전기전자재료학회논문지
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• 제14권8호
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• pp.679-687
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• 2001

It is known that amorphous BaTiO$_3$ thin films have good insulating properties[1][2]. In this investigation, amorphous BaTiO$_3$ thin films were deposited by rf magnetron sputtering on thick BaTiO$_3$ films of AC powder EL devices which were fabricated by screen-printing. The electrical and optical properties of the EL devices were then investigated. Adding amorphous BaTiO$_3$ thin film, it showed that leakage current density was decreased. Especially, leakage current density was decreased more with he sample of 0.5-hour deposition than the sample of 4-hours deposition. This result led to the improvement of luminous efficiency by 11%. It could be concluded that proper amorphous BaTiO$_3$ thin film deposition improved the surface property of dielectric layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.31-34
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• 2003

($Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$ (BSCT) (x=0.10, 0.15, 0.20) powder, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on alumina substrates using the BSCT paste. The structural and the electrical properties were investigated for various composition ratio and sintering temperature. BSCT thick film thickness, obtained by four printings, was approximately 110 ~ 120 ${\mu}m$. The Curie temperature and dielectric constant at room temperature were decreased with increasing Ca content. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) specimen, which was sintered at $1420^{\circ}C$ and measured at 1MHz, were about 910, 0.46% and 9.28% at 5kV/cm, respectively.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.724-727
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• 2009

We have fabricated (Ba,Sr)TiO3$TiO_3$ thick films doped with various amount of ZnBO dopants (1, 3, and 5 wt%) by screen printing method on the alumina substrates, which were sintered at the temperature below $1200^{\circ}C$. With increasing the amount of ZnBO dopants, the relative dielectric permittivity of ZnBO doped (Ba,Sr)$TiO_3$ was decreased, while loss tangent was increased. 1 wt% ZnBO doped (Ba,Sr)$TiO_3$ thick film has relative dielectric permittivity of 759 at 1 MHz, while 3 and 5 wt% of ZnBO doped (Ba,Sr)$TiO_3$ thick films have 624 and 554, respectively. By introducing ZnBO dopants to the (Ba,Sr)$TiO_3$ thick films, leakage current densities were decreased. The decreased leakage current with increasing ZnBO dopants can be explained by increased density and grain size of thick film on alumina substrate. We believe this decreased leakage current density probably come from the increased grain size and increased density.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.150-155
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• 1997

Powder type electroluminescent device(P-ELD) in this study was prepared by printing method. P-ELDs were basically composed of phosphor, insulator and transparent conducting layer. The phosphor powder was prepared by sintering the mixture of ZnS as a host, Cu as an activator, and NaCl as a flux for co-activator and enhancement of growth of the phosphor particles. The phosphor layer was made by printing the paste of the cyanoethylpullan as a binder and the ZnS system phosphor powder. In order to evaluate the luminescence characteristics of ZnS P-ELD, applied voltage - luminance(V-L), frequency-luminance(f-L), and relative luminance spectra(L- .lambda.) characteristics were measured. The experimental results show that luminance increased with increasing the applied voltage and frequency. It can be explained in terms of the potential barrier formed between ZnS and CuS. Two emission peaks in luminance-wavelength spectra measured at applied voltage of 100 $V_{rms}$ were observed at 500nm as a primary peak and 460nm as a secondary peak, respectively.y.

• Transactions on Electrical and Electronic Materials
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• 제12권1호
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• pp.11-15
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• 2011

In this study, $ZnGa_2O_4$ phosphors in its application to field emission displays and electroluminescence were synthesized through the precipitation method and $Mn^{2+}$ ions. A green luminescence activator, $Cr^{3+}$ ions, and a red luminescence activator were separately doped into $ZnGa_2O_4$, which was then screen printed to an indium tin oxide substrate. The thick films of the $ZnGa_2O_4$ were deposited with the various thicknesses using nano-sized powder. The best luminescence characteristics were shown at a thickness of 60 ${\mu}m$. Additionally, green-emission $ZnGa_2O_4:Mn^{2+}$ and red-emission $ZnGa_2O_4:Cr^{3+}$ phosphor thick films, which have superior characteristics, were manufactured through the screen-printing method. These results indicate that $ZnGa_2O_4$ phosphors prepared through the precipitation method have wide application as phosphor of the full color emission.