• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.368-372
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• 2016

In this paper, the physics-based analytical model of transition metal dichalcogenide (TMD)-based double-gate (DG) tunneling field-effect transistors (TFETs) is proposed. The proposed model is derived by using the two-dimensional (2-D) Landauer formula and the Wentzel-Kramers-Brillouin (WKB) approximation. For improving the accuracy, nonlinear and continuous lateral energy band profile is applied to the model. 2-D density of states (DOS) and two-band effective Hamiltonian for TMD materials are also used in order to consider the 2-D nature of TMD-based TFETs. The model is validated by using the tight-binding non-equilibrium Green's function (NEGF)-based quantum transport simulation in the case of monolayer molybdenum disulfide ($MoS_2$)-based TFETs.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.12
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• pp.1705-1711
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• 2017

This paper analyzes the impact of DRA (Demand Response Aggregator) on market power when competing with power generation companies (Gencos) in the electricity market. If congestion occurs in the transmission line, the strategic choice of the power generation company increases exercise of market power. DRA's strategic reduction of power load impacts the strategy of Gencos, which in turn affects the outcome of the load reduction. As the strategy of Gencos changes according to the location of the congested transmission line, the impact on the market depends on the relative location of the congested line and the DRA.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.357-357
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• 2010

Using ab initio density functional theory, we study the structural and electronic properties of interface between Cu surface and highly electron withdrawing hexaazatriphenylene-hexanitrile (HAT-CN) known as an efficient hole injection layer for organic light emitting diodes (OLEDs). We calculate the equilibrium geometries of the interface with different HAT-CN coverages. Usually, some of C-N bonds located at the edge of the HAT-CN molecule are deformed toward Cu atoms resulting in the reconstruction of Cu surface. By analyzing the electron charge and the potential distributions over the interface, we observe the formation of surface dipoles, which modify the work function at the interface. Such dipole formation is attributed to two origins, one of which is a geometrical nature and the other is a bond dipole. The former is related to structural deformation mentioned above, whereas the latter is due to charge transfer between organic and metal surface.

• Bulletin of the Korean Chemical Society
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• v.10 no.2
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• pp.142-147
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• 1989

Fluorescence enhancements of ethidium bromide (EB) by solution species of low molecular weights such as DNA base molecules and nucleosides in water are reported. The degree of enhancements was determined by intensity as well as lifetime measurements for EB fluorescence. Experiments including solvent effects on absorbance and fluorescence spectra of EB, effects of protonation on the EB absorbance spectrum, and determination of equilibrium constants for EB-DNA bases have been performed to help explain the fluorescence enhancement. The results suggest that the excited state stabilization in the hydrophobic environment, the loss of torsional/vibrational energy of amino groups, and the change in the electronic transition characteristics are all responsible for the fluorescence enhancement.

• Bulletin of the Korean Chemical Society
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• v.20 no.12
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• pp.1441-1446
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• 1999

Laser-induced fluorescence (LIF) spectroscopy has been applied to study the supersonic jet of radicals of nitric oxide (NO) and atomic iodine produced in the flash pyrolysis of precursors n-butylnitrite (CH₃(CH₂)₃ONO) and allyl iodide (C₃$H_5$I), respectively. The systematic population analysis with spectral simulations demonstrates that the precursors are efficiently pyrolyzed and that radical beams show a substantial supersonic cooling. In addition, absence of local equilibrium was observed in the distributions of two electronic spin-orbit states ²Π$_{1/2}$ and ²Π$_{3/2}$ of NO products and can be rationalized in terms of the efficiency of collision-induced energy transfer rates.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

• Journal of Welding and Joining
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• v.20 no.4
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• pp.505-509
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• 2002

Pb is considered to be eliminated from solder, due to its toxicity. However, melting temperatures of most Pb-free solders are known higher than that of Sn37Pb. Therefore, there is a difficulty to apply Pb-free solders to electronic industry. Since Sn3Ag8Bi5In has relatively lower melting range as $188~200^{\circ}C$, on this study. Wettability and soldering characteristics of Sn3Ag8Bi5In solder in BGA were investigated to solve for what kind of problem. Zero cross time, wetting time, and equilibrium force of Sn3Ag8Bi5In solder for Cu and plated Cu such as Sn, Ni, and Au/Ni-plated on Cu were estimated. Plated Sn on Cu showed best wettability for zero cross time, wetting time and equilibrium farce. Shear strength of the reflowed joint with Sn3Ag8Bi5In ball in BGA was investigated. Diameter of the ball was 0.5mm, UBM(under bump metallurgy) was $Au(0.5\mu\textrm{m})Ni(5\mu\textrm{m})/Cu(18\mu\textrm{m})$ and flux was RMA type. For the reflow soldering, the peak reflow temperature was changed in the range of $220~250^{\circ}C$, and conveyor speed was 0.6m/min.. The shear strength of Sn3Ag8Bi5In ball showed similar level as those of Sn37Pb. The soldered balls are aged at $110^{\circ}C$ for 36days and their shear strengths were evaluated. The shear strength of Sn3Ag8Bi5In ball was increased from 480gf to 580gf by aging for 5 days.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.289-295
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• 1997

Effect of ceramic processing was investigated on the microstructure and electronic properties of low loss Mn-Zn ferrite. Addition of CaO and SiO2 to calcined powder rather than to raw materials mixtured resulted in finer-grained microstructure. Higher oxygen pressure during sintering caused microstructural inhomogeneity and the increase in power loss and disaccommodation factor. Relatively low power loss was found for sintering up to 130$0^{\circ}C$ from powders calcined at high temperature and milled shortly. It was caused by slow densification rate and normal grain growth up to 130$0^{\circ}C$. Calcination at low temperature and prolonged milling enhanced den-sification, which gave a fine grained microstructure and low powder loss at sintering temperture below 120$0^{\circ}C$. Sintering temperature above 125$0^{\circ}C$, however, showed abnormal grain growth.

• Journal of the Korean Electrochemical Society
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• v.6 no.2
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• pp.119-129
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• 2003

The Langmuir adsorption isotherms of the over-potentially deposited hydrogen (OPD H) fur the cathodic $H_2$ evolution reaction (HER) at the poly-Au and $Rh|0.5M\;H_2SO_4$ aqueous electrolyte interfaces have been studied using cyclic voltammetric and ac impedance techniques. The behavior of the phase shift $(0^{\circ}{\leq}{-\phi}{\leq}90^{\circ})$ for the optimum intermediate frequency corresponds well to that of the fractional surface coverage $(1{\geq}{\theta}{\geq}0)$ at the interfaces. The phase-shift profile $({-\phi}\;vs.\;E)$ for the optimum intermediate frequency, i.e., the phase-shift method, can be used as a new electrochemical method to determine the Langmuir adsorption isotherm $({\theta}\;vs.\;E)$ of the OPD H for the cathodic HER at the interfaces. At the poly-Au|0.5M $H_2SO_4$ aqueous electrolyte interface, the equilibrium constant (K) and the standard free energy $({\Delta}G_{ads})$ of the OPD H are $2.3\times10^{-6}$ and 32.2kJ/mol, respectively. At the poly-Rh|0.5M $H_2SO_4$ aqueous electrolyte interface, K and ${\Delta}G_{ads}$ of the OPD H are $4.1\times10^4\;or\;1.2\times10^{-2}$ and 19.3 or 11.0kJ/mol depending on E, respectively. In contrast to the poly-Au electrode interface, the two different Langmuir adsorption isotherms of the OPD H are observed at the poly-Rh electrode interface. The two different Langmuir adsorption isotherms of the OPD H correspond to the two different adsorption sites of the OPD H on the poly-Rh electrode surface.

• International Journal of Control, Automation, and Systems
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• v.2 no.2
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• pp.247-255
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• 2004

The majority of real-world problems encountered by engineers involve simultaneous optimization of competing objectives. In this case instead of single optima, there is a set of alternative trade-offs, generally known as Pareto-optimal solutions. The use of evolutionary algorithms Pareto GA, which was first introduced by Goldberg in 1989, has now become a sort of standard in solving Multiobjective Optimization Problems (MOPs). Though this approach was further developed leading to numerous applications, these applications are based on Pareto ranking and employ the use of the fitness sharing function to maintain diversity. Another scheme for solving MOPs has been presented by J. Nash to solve MOPs originated from Game Theory and Economics. Sefrioui introduced the Nash Genetic Algorithm in 1998. This approach combines genetic algorithms with Nash's idea. Another central achievement of Game Theory is the introduction of an Evolutionary Stable Strategy, introduced by Maynard Smith in 1982. In this paper, we will try to find ESS as a solution of MOPs using our game model based co-evolutionary algorithm. First, we will investigate the validity of our co-evolutionary approach to solve MOPs. That is, we will demonstrate how the evolutionary game can be embodied using co-evolutionary algorithms and also confirm whether it can reach the optimal equilibrium point of a MOP. Second, we will evaluate the effectiveness of our approach, comparing it with other methods through rigorous experiments on several MOPs.