• Title/Summary/Keyword: Electronic devices

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A Tone Mapping Algorithm Based on Multi-scale Decomposition

  • Li, Weizhong;Yi, Benshun;Huang, Taiqi;Yao, Weiqing;Peng, Hong
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.10 no.4
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    • pp.1846-1863
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    • 2016
  • High dynamic range (HDR) images can present the perfect real scene and rich color information. A commonly encountered problem in practical applications is how to well visualize HDR images on standard display devices. In this paper, we propose a multi-scale decomposition method using guided filtering for HDR image tone mapping. In our algorithm, HDR images are directly decomposed into three layers:base layer, coarse scale detail layer and fine detail layer. We propose an effective function to compress the base layer and the coarse scale detail layer. An adaptive function is also proposed for detail adjustment. Experimental results show that the proposed algorithm effectively accomplishes dynamic range compression and maintains good global contrast as well as local contrast. It also presents more image details and keeps high color saturation.

A Study on the Dielectric Property of PBLG (PBLG의 유전특성에 관한 연구)

  • Kim, Beyung-Geun;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.428-431
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    • 2002
  • Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/ PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

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An Optical Micro-Magnetic Device: Magnetic-Spatial Light Modulator

  • Park, Jae-Hyuk;Inoue, M.;Cho, Jae-Kyeong;Nishimura, K.;Uchida, H.
    • Journal of Magnetics
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    • v.8 no.1
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    • pp.50-59
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    • 2003
  • Spatial light modulators (SLMs) are centrally important devices in volumetric recording, data Processing, Pattern recognition and other optical systems. Various types of reusable SLMs with two-dimensional pixel arrays have been intensively developed. Of these, magneto-optic spatial light modulators (MOSLMs) have advantages of high switching speed, robustness, nonvolatility, and radioactive resistance. In this article, we review recent development work on MOSLMs, mainly in relation to our own studies.

Stretchable and Foldable Electronics by Use of Printable Single-Crystal Silicon

  • Ahn, Jong-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.29-29
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    • 2008
  • Realization of electronics with performance equal to established technologies that use rigid semiconductor wafers, but in lightweight, foldable and stretchable formats would enable many new application possibilities. Examples include wearable systems for personal health monitoring, 'smart' surgical gloves with integrated electronics and electronic eye type imagers that incorporate focal plane arrays on hemispherical substrates. Circuits that use organic or certain classes of inorganic electronic materials on plastic or steel foil substrates can provide some degree of mechanical flexibility, but they cannot be folded or stretched. Also, with few exceptions such systems offer only modest electrical performance. In this talk, I will present a new approach to high performance, flexible and stretchable integrated circuits. These systems combine single-crystal silicon nanoribbons with thin plastic or elastomeric substrates using both "top-down" and "transfer-printing" technologies. The strategies represent promising routes to high performance, flexible and stretchable optoelectronic devices that can incorporate established, high performance inorganic electronic materials.

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A Study on Development of the Lightning Warning System (뇌운경보장치 개발에 관한 연구)

  • Kil Gyung-Suk;Song Jae-Yong;Kim Il-Kwon;Moon Seung-Bo;Cha Myung-Soo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2006.05a
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    • pp.274-277
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    • 2006
  • This paper describes a lighting warning system (LWS) which consists of a corona needle electrode, a low noise differential amplifier, an A/D converter, an one-chip microprocessor, a LCD and alarm devices. The corona needle electrode is used to measure electric field intensity caused by thunderclouds on the ground level. To evaluate the sensitivity of the LWS, calibration experiment was carried out using a round-shape parallel plate electrode system. The theoretical and experimental results show that the LWS can measure electric field intensity over 2 [kV/m].

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Optimization of the Profiles in MeV Implanted Silicon Through the Modification of Electronic Stopping Power

  • Jung, Won-Chae
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.2
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    • pp.94-100
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    • 2013
  • The elements B, P and As can each be implanted in silicon; for the fabrication of integrated semiconductor devices and the wells in CMOS (complementary metal oxide semiconductor). The implanted range due to different implanted species calculated using TRIM (Transport of Ions in Matter) simulation results was considered. The profiles of implanted samples could be measured using SIMS (secondary ion mass spectrometry). In the comparison between the measured and simulated data, some deviations were shown in the profiles of MeV implanted silicon. The Moliere, C-Kr, and ZBL potentials were used for the range calculations, and the results showed almost no change in the MeV energy region. However, the calculations showed remarkably improved results through the modification of the electronic stopping power. The results also matched very well with SIMS data. The calculated tolerances of $R_p$ and ${\Delta}R_p$ between the modified $S_e$ of TRIM and SIMS data were remarkably better than the tolerances between the TRIM and SIMS data.

Electrical properties of thick film dissolved oxygen sensors (후막형 용존 산소 센서의 전기적 특성)

  • Lee, Kyung-Jun;Jung, Kyung-Jin;Lee, Sung-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.92-95
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    • 2003
  • The dissolved oxygen sensors with thick film type were fabricated for low cost products and the electrical properties were investigated in the different operating temperatures. Pt paste was used for working electrode and Ag/AgCl paste for reference electrode. The fabricated devices have fast response of current changes according to dissolved oxygen concentrations in the applied voltage of $0.6{\sim}0.8V$. This is expected to apply a chip and/or disposal dissolved oxygen sensors.

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Experiments on the Heat Transfer and Pressure Drop Characteristics of a Channel with Pin-Fin Array (핀-휜을 삽입한 채널의 열전달 및 압력강하 특성 실험)

  • 신지영;손영석;김상민;이대영
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.16 no.7
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    • pp.623-629
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    • 2004
  • Rapid development of electronic technology requires small size, high density packaging and high power of electronic devices, which result in more heat generation by the electronic system. Present cooling technology may not be adequate for the thermal management in the current state-of-the-art electronic equipment. Forced convective heat transfer in a channel filled with pin-fin array is studied experimentally in this paper as an alternative cool-ing scheme for a high heat-dissipating equipment. Various configurations of the pin-fin array are selected in order to find out the effect of spacing and diameter of the pin-fin on the heat transfer and pressure drop characteristics. In the low porosity region, interfacial heat transfer and pressure drop seem to show different trend compared to the conventional heat transfer process.

Development of Flat Plate Type Small Cooling Device (Flat Plate Type 소형 냉각소자 개발)

  • Moon, Seok-Hwan;Hwang, Gunn;You, In-Kyu;Cho, Kyoung-Ik;Yu, Byoung-Gon
    • Proceedings of the SAREK Conference
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    • 2008.11a
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    • pp.170-174
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    • 2008
  • Recently, a problem related to the thermal management in portable electronic and telecommunication devices is becoming issued. That is due to the trend of slimness of the devices, so it is not easy to find the optimal thermal management technology for the devices. From now on, a pressed circular type cooling device has been mainly used, however the cooling device with thin thickness is becoming needed by the inner space constraint. In the present study, the silicon and metal flat plate type cooling device with the separated vapor and liquid flow path was designed and fabricated. Through the experimental study, the normal isothermal characteristic by vapor-liquid phase change was confirmed and the cooling device with 70mm of total length showed 6.8W of the heat transfer rate within the range of $4{\sim}5^{\circ}C$/W of thermal resistance. In the meantime, the metal cooling device was developed for commercialization. The device was designed to have all structures of evaporator, vapor flow path, liquid flow path and condenser in one plate. And an envelope of that could be completed by combining the two plates of same structure and size. And the simplicity of fabrication process and reduction of manufacturing cost could be accomplished by using the stamping technology for fabricating large flow paths relatively. In the future, it will be possible to develop the commercialized cooling device by revising the fabrication process and enhancing the thermal performance of that.

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Group-based Random Access Using Variable Preamble in NB-IoT System (NB-IoT 시스템에서 가변 프리앰블을 이용한 그룹 랜덤 액세스)

  • Kim, Nam-Sun
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.13 no.5
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    • pp.370-376
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    • 2020
  • In this study, we consider a group-based random access method for group connection and delivery by grouping devices when H2H devices and large-scale M2M devices coexist in a cell in NB-IoT environment. H2H devices perform individual random access, but M2M devices are grouped according to a NPRACH transmission period, and a leader of each group performs random access. The preamble is allocated using the variable preamble allocation algorithm of the Disjoint Allocation(DA) method. The proposed preamble allocation algorithm is an algorithm that preferentially allocates preambles that maximizes throughput of H2H to H2H devices and allocates the rest to M2M devices. The access distribution of H2H and M2M devices was set as Poisson distribution and Beta distribution, respectively, and throughput, collision probability and resource utilization were analyzed. As the random access transmission slot is repeated, the proposed preamble allocation algorithm decreases the collision probability from 0.93 to 0.83 and 0.79 when the number M2M device groups are 150. In addition, it was found that the amount of increase decreased to 33.7[%], 44.9[%], and 48.6[%] of resource used.