• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.22 no.9
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• pp.614-619
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• 2010

Recently, a problem related to the thermal management in portable electronic and telecommunication devices is becoming issued. That is due to the trend of a slimness of the devices, so it is not easy to find the optimal thermal management solution for the devices. From now on, a pressed circular type cooling device has been mainly used, however the cooling device with thin thickness is becoming needed by the inner space constraint of the applications. In the present study, the silicon flat plate type cooling device with the separated vapor and liquid flow path was designed and fabricated. The normal isothermal characteristics created by vapor-liquid phase change was confirmed through the experimental study. The cooling device with 70 mm of total length showed 6.8 W of the heat transfer rate within the range of $4{\sim}5^{\circ}C/W$ of thermal resistance. In the future, it will be possible to develop the commercialized cooling device by revising the fabrication process and enhancing the thermal performance of the silicon and glass cooling device.

• Journal of the Korea Society of Computer and Information
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• v.8 no.3
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• pp.9-15
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• 2003

IEEE1394 standard supports both isochronous and asynchronous data transmission, thus enabling high-speed data exchange between PC and networked home electronic devices. This paper describes an implementation of Test Bed for Linux based IEEE1394 communication test. In this paper, An integrated Software was developed to test IEEE1394 communication environment. To develop the software, open source software(gscanbus,dvgrab, playdv, Xine, Kino) for the Linux environment was investigated and integrated. It was tested such as the communication among the devices, asynchronous date transmission, isochronous data transmission, and its result was successful. This integrated software has the potential to become efficient test tool for the futher development of networked home electronic devices and multimedia services.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.600-603
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• 2000

Recently, Display devices have become important in the information-oriented society and flat display devices are greatly demanded. Liquid crystal display(LCD) represents one of the most promising devices for large size desk-top monitors, notebook PC and car navigation system. However LCD cannot give forth light itself and must have backlight system. The most popular backlighting system is composed of a lighting-guide plate and CCFL as a lighting source. The number of CCFL must increase up if the area of display is increased. So a new backlighting source with high luminance is needed for large LCDs. In this paper, we proposed a surface discharge FFL with the new electrode structure like the needle shaped electrode as the variation of cell structure to high luminance and low power consumption. In comparison with different electrode structure it has low discharge voltage and current and good optical characteristics. So it has better discharge characteristics than different surface discharge FFL and can be fungible for a backlight as a lighting source in LCDs.

• Journal of Electrical Engineering and Technology
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• v.9 no.4
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• pp.1332-1342
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• 2014

This paper proposes a novel test circuit for SiC transistors. On-state resistance under practical application conditions is an important characteristic for the device reliability and conduction efficiency of SiC transistors. In order to measure the on-state resistance in practical applications, high voltage is needed, and high current is also necessary to ignite performance for the devices. A soft-switching circuit based on synchronous buck topology is developed in this paper. To provide high-voltage and high-current stresses for the devices without additional spikes and oscillations, a resonant circuit has been introduced. Using the novel circuit technology, soft-switching can be successfully realized for all the switches. Furthermore, in order to achieve accurate measurement of on-state resistance under switching operations, an active clamp circuit is employed. Operation principle and design analysis of the circuit are discussed. The dynamic measurement method is illustrated in detail. Simulation and experiments were carried out to verify the feasibility of the circuit. A special test circuit has been developed and built. Experimental results confirm that the proposed circuit gives a good insight of the devices performance in real applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.727-736
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• 1995

This paper examines the characteristics and physical properties of the scaled MONOS nonvolatile memory device for low programming voltage EEPROM. The capacitor-type MONOS memory devices with the nitride thicknesses ranging from 41.angs. to 600.angs. have been fabricated. As a result, the 5V-programmable MONOS device has been obtained with a 20ms programming time by scaling the nitride thickness to 57.angs. with a tunneling oxide thickness of 19.angs. and a blocking oxide thickness of 20.angs.. Measurement results of the quasi-static C-V curves indicate, after 10$\^$6/ write/erase cycles, that the devices are degraded due to the increase of the silicon-tunneling oxide interface traps. The 10-year retention is impossible for the device with a nitride less than 129.angs.. However, the MONOS memory device with 10-year retentivity has been obtained by increasing the blocking oxide thickness to 47.angs.. Also, the memory traps such as the nitride bulk trap and the blocking oxide-nitride interface trap have been investigated by measuring the maximum flatband voltage shift and analyzing through the best fitting method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.31-34
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• 2004

During the last 20 years organic semiconductors have attracted considerable attention due to their interesting physical properties followed by various technological applications in the area of electronics and opto-electronics. It has been a long time since organic solar cells were expected as a low-cost energy-conversion device. Although practical use of them has not been achieved, technological progress continues. Morphology of the materials, organic/inorganic interface, metal cathodes, molecular packing and structural properties of the donor and acceptor layers are essential for photovoltaic response. We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerine$(C_{60})$ as electron acceptor(A) with doped charge transport layers, $Alq_3$ as an electron transport or injection layer. We observed the photovoltaic characteristics of the solar celt devices using the Xe lamp as a light source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.308-311
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• 2000

The organic electroluminescene (EL) device has gathered much interested because of its potential in materials and simple device fabrication. We fabricated EL device which have a mixed single emitting layer containing N,N'-diphenyl-N,N'-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine [TPD] and poly(3-hexylthiophene) [P3HT]. The molar ratio between P3HT and TPD chaged with 1:1, 3:1, 5:1, 3:2 and 5:2. EL intensity of ITO/P3HT+TPD/Mg:In devices is enhanced by addition of TPD into P3HT. This can be explained that the energy transfer occurs from TPD to P3HT. Recombination probability increases in emitting layer because that TPD as hole transport material plays a role more injection hole and Mg:In (3.7eV) electrode has low work function make easily electron injection. ITO/P3HT+TPD(5:2)/Mg:In devices emit orange-red light at 28V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.280-283
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• 2004

This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed $200{\mu}m$ width and $2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.303-304
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• 2005

Add $Li_2CO_3$ to $(Ba_{0.6}Sr_{0.4})$ $TiO_3$ powder to lower sitering temperature in this research, made thick film by tape casting method. Investigated about sitering temperature and physical properties that added $Li_2CO_3$ Even if lower sitering temperature about $200^{\circ}C$ adding $Li_2CO_3$ 10wt.%, density was near to 5.7$g/cm^3$ that is theoretical values, and crystal structure examined as perobeuseukaiteu senior after sintering.