• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.78.1-78.1
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• 2007

• Electrical & Electronic Materials
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• v.6 no.5
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• pp.417-427
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• 1993

액체질소하에서의 물리적인 현상 및 실험결과를 통하여 캐리어 냉동현상, 좁은 폭 및 숏트 채널효과를 포함한 문턱전압 모델, Surface Roughness Scattering 및 Ioniaed Impurity Scattering을 포함한 이동도 모델과 적합한 기판 전류모델이 제안되었으며 이 모델들은 모의실험 프로그램인 BSIM과 SPICE에 이식되었다. 제작된 링 오실레이터와 리플 가산기에 적용한 결과 측정한 데이타와 잘 부합되었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.120.2-120
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• 1998

• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.188-188
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• 2005

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.54 no.8
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• pp.475-481
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• 2005

In the existing ICT technique, the mounted electronic devices on the printed circuit board are tested whether the devices are good or not by comparing and measuring the value of the devices after separating the devices to be tested from around it based on the guarding method. But, in case that resistance, inductor and capacitor are configured as a parallel circuit on the circuit pattern, values for each device can not be measured because the total impedance value of the parallel circuit is measured. Accordingly, it is impossible to test whether the parallel circuit is good or not in case that the measured impedance value is within the tolerance error. Also, it is difficult to identify that which device among R, L and C of the parallel circuit is bad in case that the measured impedance value is out of the tolerance error. Accordingly, this paper proposes a test method which can enhance the quality and productivity by separating and measuring accurately R, L and C components from the RLC parallel circuits on the device-mounted printed circuit board. First, the RLC parallel circuit to be test is separated electrically from around it using three-terminal guarding technique. And then R, L and C values are computed based on the total impedance values and phase angles between voltage and current of the parallel circuit measured from two AC input signals with other frequency, Finally, the availability and accuracy of the proposed test method is verified by reviewing the simulation results.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.92-97
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• 2016

This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.16 no.1
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• pp.266-286
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• 2022

Public key encryption with keyword search (PEKS) allows a user to make search on ciphertexts without disclosing the information of encrypted messages and keywords. In practice, cryptographic operations often occur on insecure devices or mobile devices. But, these devices face the risk of being lost or stolen. Therefore, the secret keys stored on these devices are likely to be exposed. To handle the key exposure problem in PEKS, the notion of key-updatable PEKS (KU-PEKS) was proposed recently. In KU-PEKS, the users' keys can be updated as the system runs. Nevertheless, the existing KU-PEKS framework has some weaknesses. Firstly, it can't update the keyword ciphertexts on the storage server without leaking keyword information. Secondly, it needs to send the search tokens to the storage server by secure channels. Thirdly, it does not consider the search token security. In this work, a new PEKS framework named key-updatable and ciphertext-sharable PEKS (KU-CS-PEKS) is devised. This novel framework effectively overcomes the weaknesses in KU-PEKS and has the ciphertext sharing function which is not supported by KU-PEKS. The security notions for KU-CS-PEKS are formally defined and then a concrete KU-CS-PEKS scheme is proposed. The security proofs demonstrate that the KU-CS-PEKS scheme guarantees both the keyword ciphertext privacy and the search token privacy. The experimental results and comparisons bear out that the proposed scheme is practicable.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.15-22
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• 2019

In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.5
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• pp.915-922
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• 2017

The rapid increase in users of mobile smart devices has greatly expanded their range of activities. Compare to conventional mobile devices, smart devices have higher security requirements because they manage and use various kind of confidential information of the owners. However, the cation schemes provided by conventional smart devices are vulnerable to recent attacks such as shoulder surfing, recording, and smudge attacks, which are the social engineering attacks among the types of security attacks targeting the smart devices. In this paper, we propose a novel authentication method that is robust against social engineering attacks but sufficiently considering user's convenience. The proposed method is robust by using combination of a graphical authentication method and a text-based authentication method. Furthermore, our method is easier to memorize the password compare to the conventional graphical authentication methods.