• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.328-330
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• 1997

Organic semiconductors such as conjugated polymers and oligomers have been studied many research groups. The band structures of conjugated polymers and oligomers are similar to those of conventional inorganic semiconductors Thin films based on these materials show a promising potential for Field Effect Transistors(FETs) and Light Emitting Diodes(LED) because fabrication processes are simple and cheaper for large electronic devices and flexible devices are also possible.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1301-1302
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• 2006

In this paper, embedded spiral inductors are investigated into the PCB substrate for low cost RF SOP applications. The spiral inductors designed with geometrical variations were simulated, fabricated, measured, and characterized by using 3D EM simulator, 8 layered PCB standard process and HP 8510B network analyzer (or verifying their applicability. The fabricated embedded spiral inductor has inductance of 9.4 nH at 800MHz, maximum quality factor of 64.8 at 1.09GHz and self resonant frequency of 3.93GHz, respectively. As the measured inductances and quality factors are well matched with simulated ones. PCB embedded spiral inductors are promising for advanced electronic systems with various functionality, low cost, small size and volume.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.263-270
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• 2020

In this study, the physical mechanism and diffusion effects in aluminium implanted silicon was investigated. For fabricating power semiconductor devices, an aluminum implantation can be used as an emitter and a long drift region in a power diode, transistor, and thyristor. Thermal treatment with O₂ gas exhibited to a remarkably deeper profile than inert gas with N₂ in the depth of junction structure. The redistribution of aluminum implanted through via thermal annealing exhibited oxidation-enhanced diffusion in comparison with inert gas atmosphere. To investigate doping distribution for implantation and diffusion experiments, spreading resistance and secondary ion mass spectrometer tools were used for the measurements. For the deep-junction structure of these experiments, aluminum implantation and diffusion exhibited a junction depth around 20 ㎛ for the fabrication of power silicon devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.598-601
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• 1999

There is currently considerable interest in the applications of conjugated polymers, oligomers and small molecules for thin-film electronic devices. Organic materials have potential advantages to be utilized as semiconductors in field effect transistor and light emitting didoes. In this study, Pentacene thin film transistors(TFTs) were fabricated on glass substrate. Aluminum and Gold wei\ulcorner used fur the gate and source/drain electrodes. Silicon dioxde was deposited as a gate insulator by PECVD and patterned by R.I.E. The semiconductor layer of pentacene was thermally evaporated in vaccum at a pressure of about 10$^{-8}$ Torr and a deposition rate 0.3$\AA$/sec. The fabricated devices exhibited the field-effect mobility as large as 0.07cm$^2$/Vs and on/off current ratio larger than 10$^{7}$

• Proceedings of the KIEE Conference
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• 1998.11a
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• pp.115-116
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• 1998

A flyback converter that decreases ZVS resonant voltage by using ZVS capacitor is proposed. Because of high resonant voltage at ZVS convenient circuits use expensive devices of high power. The devices make the total price high. A circuit with ZVS capacitor is proposed to down the price. A practical converter can be constructed. Operation of the converter is analyzed and simulated. We compare experiment results with simulation results. We show that the system is identical with the simulated system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.653-656
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• 2014

$Cs_3Sb$ photocathode was formed by newly developed process and successive in-situ lighting devices were fabricated in a process chamber. R, G, and B phosphors were applied on the anode plate, respectively. Major parameters such as brightness, power consumption, and efficacy were measured. The wavelength of LED excitation source was 450 nm. Both high power and low power modes were applied in the measurement. Measurement values were clearly differentiated by the voltage application modes. The measured values of each parameter was good enough to be applied for general lighting source. The results showed that $Cs_3Sb$ photocathode formed in atmospheric conditions was functioning as good as the photocathode formed in UHV conditions, and thus it could be applied to advanced lighting devices.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.15 no.8
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• pp.667-673
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• 2003

Recent trends in the electronic equipment indicate that the power consumption and heat generation in a chip increase as the components are miniaturized and the computing speed becomes faster. Suitable heat dissipation is required to ensure the guaranteed performance and reliable operation of the electronic devices. The aim of the present study is to investigate the forced-convective thermal-hydraulic characteristics of a pin-fin heat exchanger as a candidate for cooling system of the electronic devices. The influence of the structure of the pin-fin assembly on heat transfer is investigated by porous medium model. The results are compared with the experimental data or correlations of several researchers for the heat transfer coefficients for the channel flow with pin-fin arrays. Finally, the effects of design parameters such as the pin-fin diameter and the spacing are examined.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.12 no.12
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• pp.6057-6078
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• 2018

Smart home systems provide a safe, comfortable, and convenient living environment for users, whereby users enjoy featured home services supported by the data collected and generated by smart devices in smart home systems. However, existing smart devices lack sufficient protection in terms of data security and privacy, and challenging security and privacy issues inevitably emerge when using these data. This article aims to address these challenging issues by proposing a private blockchain-based access control (PBAC) scheme. PBAC involves employing a private blockchain to provide an unforgeable and auditable foundation for smart home systems, that can thwart illegal data access, and ensure the accuracy, integrity, and timeliness of access records. A detailed security analysis shows that PBAC could preserve data security against various attacks. In addition, we conduct a comprehensive performance evaluation to demonstrate that PBAC is feasible and efficient.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.7-11
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• 2021

The electrocardiogram(ECG) and heart rates are essential for diagnosing heart disease. However, conventional portable ECG devices are possible to only measure heart rates or have limitations in how and where they are measured. In this paper, a portable ECG system in which ECG waveforms and heart rates are displayed on smartphone screens is developed. A smartphone is used as display equipment instead of a computer screen for continuous monitoring. The developed ECG system filters and amplifies detected analog ECG signals. Next, it converts the amplified analog ECG signals into digital signals, then transmits to the smartphone via Bluetooth communication. This ECG system can display and store biomedical signals on a smartphone through the application. As a result, the waveform and heart rates of the developed portable ECG system has been confirmed to be similar to those of existing medical devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.322-332
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• 2022

Energy storage capacitors based on dielectric ceramics with superior polarization properties and dielectric constant can provide much higher output power density due to their very fast energy charging/discharging rates, which are particularly suitable for operating pulsed-power devices. For an outstanding energy storage performance of dielectric capacitor, a large recoverable energy density could be derived by introducing a slim polarization-electric field hysteresis loop into dielectric materials by various technical approaches. Many research teams have explored various dielectric capacitor technologies to demonstrate high output power density and ultrafast charging/discharging behavior. This article reviews the recent research progress in high-performance dielectric capacitors for pulsed-power electronic applications.