• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.361-363
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• 1997

Electronic devices are very weak against lightning surges injected from grounding systems and can be damaged. The malfunction and damage of electronic circuits bring about several disadvantages such as low operation performances, a lot of economical losses, and etc. In order to obtain the effective protection measure of electronic devices from overvoltages and lightning surges, the analysis of the transient grounding impedances is very important. The aim of this work is to evaluate the behaviors of transient grounding impedances under impulse currents and to investigate the effect of grounding lead wire. Z-t, Z-i and V-i curves of transient grounding impedance under impulse current waveforms have been measured and analyzed.

• Laser Solutions
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• v.13 no.2
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• pp.6-9
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• 2010

In printed electronics, printing rolls are used to transfer electronic ink onto a flexible substrate. Generally printing rolls are being made by the indirect laser method which is based on the etch process, thus not environment-friendly and not suitable for making a large printing roll. For the pursuit of making a large printing roll for mass printing of electronic devices, we have directly engraved micro-patterns into a Zn plated printing roll using a 30W pulse-modulated fiber laser. We have successfully engraved line patterns ranging from about 15-30${\mu}m$ in width.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.12
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• pp.5174-5190
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• 2016

Recent years have witnessed an explosive growth of mobile devices, mobile cloud computing services offered by these devices and the remote clouds behind them. In this paper, we noticed ultra-low latency service, as a type of mobile cloud computing service, requires extremely short delay constraints. Hence, such delay-sensitive applications should be satisfied with strong QoS guarantee. Existing solutions regarding this problem have poor performance in terms of throughput. In this paper, we propose an end-to-end bandwidth resource reservation via software defined scheduling inspired by the famous SDN framework. The main contribution of this paper is the end-to-end resource reservation and flow scheduling algorithm, which always gives priority to delay sensitive flows. Simulation results confirm the advantage of the proposed solution, which improves the average throughput of ultra-low latency flows.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.969-977
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• 1996

본고에서는 여러가지 Wide Band-gap중에서 특히 최근에 많은 관심을 끌고 있는 GaN와 4H-SiC, 6H0SiC의 전자기적 물성을 소개하고 현재 이들로부터 제작된 prototype소자들의 성능을 비교함으로써 그 발전현황을 알아보기로 한다. 본고에서 관심을 두는 소자분야는 광전소자(optoelectronic devices)라기보다는 고주파 고출력용 전력소자임을 밝힌다. 아울러 GaN로부터 제작된 MESFET(MEtal Semiconductor Field-Effect Transistor)소자의 고주파 대역에서의 Large-Signal특성을 Device/Circuit Model을 통하여 실험치와 비교하여보고 이로부터 최적화된 channel 구조를 갖는 소자구조에서의 RF특성을 조사한다.

• Journal of Surface Science and Engineering
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• v.49 no.6
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• pp.477-485
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• 2016

As expensive and valuable metals being used in electronic and semiconducting industries are abandoned as industrial wastes after use of them, it is required to recover them from e-wasted electronics parts. Gold which is used for printed circuit boards or electronic equipments, accessories, etc., is one of e-Wasted materials and recently indium, gallium, zirconium, cobalt, molybdenum and lithium are bacome valuable metals to be recovered from the e-wastes. Since the amount of precious metals is now being faced with scarcity, lean too much on area and instability of supply, and industrial demands are rapidly increasing every year, it becomes more important to recover the valuable metals from the industrial wastes. In this review, we introduced technologies and research trend of the recovery processes of valuable metals from the e-wastes in high-tech devices over the world.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.621-622
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• 2006

This paper presents the design of LVDS(Low-Voltage-Differential-Signaling) driver circuit for Gb/s-per-pin operation using BiCMOS process technology. To reduce chip area, LVDS driver's switching devices were replaced with lateral bipolar devices. The designed lateral bipolar transister's common emitter current gain($\beta$) is 20 and device's emitter size is 2*10um. Also the proposed LVDS driver is operated at 2.5V and the maximum data rate is 2.8Gb/s approximately.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.589-590
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• 2006

A novel Triple-Well P-type Triggered Silicon Controlled Rectifier (TWPTSCR) for on-chip ESD protection implemented with a triple-well CMOS technology is presented. Unlike conventional SCR devices, the proposed TWPTSCR offers a reduced triggering voltage level as well as the enhanced ESD performance of the SCR devices. From the experimental results, the TWPTSCR with a device width of 20um has the triggering voltage of 1.1V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.228-235
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• 2004

In this thesis, it is designed efficient electrode formation on the organic luminescent device. ITO electrode is treated with $O_2$plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. It is realized efficiently electron injection to aluminum due to introduce the quantum well in cathode. In the case of device inserted the buffer layer by using the plasma poiymerization after $O_2$plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic ate made in the omitting layer. Compared with the devices without buffer layer, the turn-on voltage was lowered by 1.0(V) doc to the introduction of buffer layer Since the quantum well structure is formed in front of cathode to optimize the tunneling effect, there is improved the power efficiency more than two times.

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.67-71
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• 2015

Product of technology developed in this study is an external interface for controlling the equipment of pendant key remote control system circuit board, and it is used in the electronic component test equipment system. Main control system module is in the role as a device for controlling the various control devices that make up the integrated system for microscopic examination at the request of the host computer engineers to control the inspection equipment. The pentane-key interface module to its role as a device for controlling the various control devices that make up the integrated system for microscopic examination at the request of the host computer for the engineer to control the inspection equipment. Development of the control system can be expected in the configuration of a system for efficient and accurate inspection of high-precision parts.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.173-179
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• 2006

Due to the limitations of the channel length, the lateral spread for two-dimensional impurity distributions is critical for the analysis of devices including the integrated complementary metal oxide semiconductor (CMOS) circuits and high frequency semiconductor devices. The developed codes were then compared with the two-dimensional implanted profiles measured by transmission electron microscope (TEM) as well as simulated by a commercial TSUPREM4 for verification purposes. The measured two-dimensional TEM data obtained by chemical etching-method was consistent with the results of the developed analytical model, and it seemed to be more accurate than the results attained by a commercial TSUPREM4. The developed codes can be applied on a wider energy range $(1KeV{\sim}30MeV)$ than a commercial TSUPREM4 of which the maximum energy range cannot exceed 1MeV for the limited doping elements. Moreover, it is not only limited to diffusion process but also can be applied to implantation due to the sloped and nano scale structure of the mask.