• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.54-58
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• 2007

Development of high performance LTPS TFTs contributed to open up new SOP technology with various digital circuits integrated in display panels. This work introduces the current mode logic(CML) gate design method with which one can replace slow CMOS logic gates. The CML inverter exhibited small logic swing, fast response with high power consumption. But the power consumption became compatible with CMOS gates at higher clock speed. Due to small current values in CML, layout area is smaller than the CMOS counterpart even though CML uses larger number of devices. CML exhibited higher noise immunity thanks to its non-inverting and inverting outputs. Multi-input NAND/AND and NOR/OR gates were implemented by the same circuit architecture with different input confirugation. Same holds for MUX and XNOR/XOR CML gates. We concluded that the CML gates can be designed with few simple circuits and they can improve power consumption, chip area, and speed of operation.

• Journal of IKEEE
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• v.19 no.4
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• pp.625-631
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• 2015

In this paper, an 8051 microcontroller with application-specific instructions and I/O ports for data transmission is designed. The designed microcontoller includes two UART ports and one SMBus port to control external devices and to transmit data with them. Application-specific instruction is developed and added to the instruction set to exploit these I/O ports. So the designed microcontroller can perform multi-device control and multi-byte transmission. Also, it can reduce the code size of the application program. Especially, the designed microcontroller does not stall and can execute other programs during data transmission, which significantly increases its efficiency. Synthesized in 0.18 um technology, the area overhead due to application-specific instructions was negligible. Operations of all instructions and I/O ports were verified to run correctly on a FPGA board.

• Journal of IKEEE
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• v.21 no.1
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• pp.73-76
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• 2017

SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.

• Korean Journal of Optics and Photonics
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• v.19 no.3
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• pp.193-198
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• 2008

A novel refractive index sensor, which consists of polymer channel waveguide overlaid with $TiO_2$ thin film, is demonstrated. To evaluate the fabricated sensor, we measured the polarimetric interference induced by concentration change of injected glycerol solution. Our experimental results show that thicker $TiO_2$ film improves the sensitivity of the polarimetric interferometer. For the fabricated waveguide with a 20 nm thick $TiO_2$ film, the measured index change to lead phase variation of $2{\pi}$ is $1.8{\times}10^{-3}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.111-114
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• 1999

Electroluminescence(EL) devices based on organic thin films have been attracted lots of interests in large-area light-emitting display. In this stuffy, an emissive layer was fabricated using Langmuir-Blodgett(LB) technique in organic light-emitting (OLEDs). This emissive organic material was synthesized and named PECCP[poly(3.6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] which has a strong electron donor group and an electron acceptor group in main chain repeated unit. This material has good solubility in common organic solvents such as chloroform. THF, etc, and has a good stability in air. The Langmuir-Blodgett(LB) technique has the advantage of precise control of the thickness down to the molecular scale, In particular, by varying the film thickness it is possible to investigate the metal/polymer interface. Optimum conditions for the LB film deposition are usually determined by investigating a relationship between a surface pressure $\pi$ and an effective are A occupied by one molecule on the subphase. The LB films were deposited on an indium-tin-oxide(ITO) glass at a surface pressure of 10 mN/m and dipping speed of 12 mm/min after spreading PECCP solution on distilled water surphase at room temperature, Cell structure was ITO/PECCP LB film/Alq$_3$/Al. We considered PECCP as a hole -transport layer inserted between the emissive layer and ITO. We also used Alq$_3$ as an emissive layer and an electron transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum and EL spectrum of the OLEDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.102-107
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• 2003

This study puts focus on the optimization of growth temperature of CIGS absorber layer which affects severely the performance of solar cells. The CIGS absorber layers were prepared by three-stage co-evaporation of metal elements in the order of In-Ga-Se. The effect of the growth temperature of 1st stage was found not to be so important, and 350$^{\circ}C$ to be the lowest optimum temperature. In the case of growth temperature at 2nd/3rd stage, the optimum temperature was revealed to be 550$^{\circ}C$. The XRD results of CIGS films showed a strong (112) preferred orientation and the Raman spectra of CIGS films showed only the Al mode peak at 173cm$\^$-1/. Scanning electron microscopy results revealed very small grains at 2nd/3rd stage growth temperature of 480$^{\circ}C$. At higher temperatures, the grain size increased together with a reduction in the number of the voids. The optimization of experimental parameters above mentioned, through the repeated fabrication and characterization of unit layers and devices, led to the highest conversion efficiency of 15.4% from CIGS-based thin film solar cell with a structure of Al/ZnO/CdS/CIGS/Mo/glass.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1212-1217
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• 2004

Red organic electroluminescent (EL) devices based on tris(8-hydroxyquinorine aluminum) (Alq$_3$) doped with red emissive materials, 4-(dicyanomethylene)-2-t-butyl -6-(l,1,7,7-tetramethyljulolidyl-9-enyl)4H-pyran (DCJTB). poly(3-hexylthiophene) (P3HT). rubrene and 4-dicyanomethylene-2-methyl-6[2-(2,3.6.7-tetrahydro-lH,5H-benzo-[i,j]quinolizin-8yl)vinyl]-4H-pyran (DCM2) were fabricated for applying to the red light source, The photoluminescence (pL) intensities of red emissive materials doped in Alq$_3$ are limited by the concentration quenching with increasing the doping ratio and the doping concentration of DCJTB, DCM2, P3HT and rubrene measured at the maximum intensity showed 5, 1, 0.5 and 2 wt%, respectively. Time-resolved PL dynamic results showed that the PL lifetime of red emissive materials doped in Alq$_3$ were increased more than the value of material itself. It means that the efficient energy transfer occurred in the mixed state and Alq$_3$ is a suitable host materials for red emissive materials, The device which was used DCJTB as a dopant achieved the best result of the maximum luminance of 594 cd/$m^2$ at 15 V and showed the chromaticity coordinates of x=0,624, y=0,371.

• The Journal of the Korea institute of electronic communication sciences
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• v.5 no.3
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• pp.262-268
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• 2010

In this paper, this study restores the distorted image to its original image by compensating for the distortion of image from a fixed-focus camera lens. The various developments and applications of the imaging devices and the image sensors used in a wide range of industries and expanded use, but due to the needs of the small size and light weight of the camera, the distortion from acquiring images of the distorted curvature of the lens tends to affect many. In particular, the three-dimensional imaging camera, each different distortion of left and right lens cause the degradation of three-dimensional sensitivity and left-right image distortion ratio. we approached the way of generalizing the approximate equations to restore each part of left-right camera images to the coordinators of the original images. The adaptive Neuro-Fuzzy Inference System is configured for it. This system is divided from each membership function and is inferred by 1st order Sugeno Fuzzy model. The result is that the compensated images close to the left, right original images. Using low-cost and compact imaging lens by which also determine the exact three-dimensional image-sensing capabilities and will be able to expect from this study.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.5
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• pp.949-958
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• 2018

A voice recognition control system is a system for controlling a peripheral device by recognizing a voice. Recently, a voice recognition control system have been applied not only to smart devices but also to various environments ranging from IoT(: Internet of Things), robots, and vehicles. In such a voice recognition control system, the recognition rate is lowered due to the ambient noise in addition to the voice of the user. In this paper, we propose a dual channel acoustic beamforming hardware architecture for MEMS(: Microelectromechanical Systems) microphones to eliminate ambient noise in addition to user's voice. And the proposed hardware architecture is designed as ASIC(: Application-Specific Integrated Circuit) using TowerJazz $0.18{\mu}m$ CMOS(: Complementary Metal-Oxide Semiconductor) technology. The designed dual channel acoustic beamforming ASIC has a die size of $48mm^2$, and the directivity index of the user's voice were measured to be 4.233㏈.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.5
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• pp.1093-1100
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• 2018

Fast progress in miniaturization and reducing power consumption of semiconductors for wearable devices makes it possible to develop extremely small wearable systems for various application services. This results recent wearable applications to be powered from extremely low-power energy harvesters based on solar, piezo, and TENG sources. In most cases, the harvesters generate power in non-linear manner. Therefore, we implemented and experimented the device platforms to utilize natural frequency of around 3Hz. We also designed two-stage power storages and high efficiency conversion platform to consider such non-linear power harvesting sources. The experiment showed power generation of about 4.67mW/min from these non-linear sources with provision of stable energy storages.