• Title/Summary/Keyword: Electronic devices

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Effect of Ag Capping Layer on the Emission Characteristics of Transparent Organic Light-emitting Devices with Ca/Ag Double-layer Cathodes

  • Lee, Chan-Jae;Moon, Dae-Gyu
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.1
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    • pp.45-48
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    • 2014
  • We have investigated the effects of an Ag capping layer on the emission characteristics of transparent organic light-emitting devices with Ca/Ag double-layer cathodes. The thickness of the Ag layer was varied from 10 to 30 nm, whereas the Ca was fixed to be a 10 nm in the Ca/Ag structure. The luminance and current efficiency on the cathode and anode sides are significantly dependent on the Ag thickness. For example, the current efficiency on the anode side increases from 8.4 to 11.7 cd/A, whereas, on the cathode side, it decreases from 3.2 to 0.2 cd/A as the Ag thickness increases from 10 to 30 nm. These changes in emission characteristics were investigated by measuring electroluminescence, transmission, and reflection spectra.

Optimal Operation of Reactive Power Compensation Devices for Voltage Control of Emegency Status (비상상태 전압제어를 위한 무효전력보상설비의 최적 운용)

  • Ahn, Chang-Han;Baek, Young-Sik
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.5
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    • pp.661-666
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    • 2015
  • This paper proposes a method for solving running cost problem by minimizing switching reactive power compensation devices. An objective function was modeled by calculating the weighting value of cost, and a solution was derived using ILP. This paper suggests optimal coordinative control method between FACTS, Shunt Reactors, Capacitors and OLTC. Therefore, it is valuable for decision maker in determining order and capacity of devices which gaining a voltage stabilization. As a result, the objectives of voltage stabilization and cost minimization were achieved simultaneously. This realizes the economic efficiency of the system. We start by showing how to solve systems of linear equations using the language of pivots and tableaus. The effectiveness of this technique is demonstrated in modified PSS/E MIGUM 45 bus system. The simulation results show the effectiveness of this algorithm by comparing the outcome withseveral established methods.

Computer Modeling and characteristics of MFMIS devices Using Ferroelectric PZT Thin Film (강유전체 PZT박막을 이용한 MFMIS소자의 모델링 및 특성에 관한 시뮬레이션 연구)

  • 국상호;박지온;문병무
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.3
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    • pp.200-205
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    • 2000
  • This paper describes the structure modeling and operation characteristics of MFMIS(metal-ferroelectric-metal-insulator-semiconductor) device using the Tsuprem4 which is a semiconductor device tool by Avanti. MFMIS device is being studied for nonvolatile memory application at various semiconductor laboratory but it is difficult to fabricate and analyze MFMIS devices using the semiconductor simulation tool: Tsuprem4, medici and etc. So the new library and new materials parameters for adjusting ferroelectric material and platinum electrodes in the tools are studied. In this paper structural model and operation characteristics of MFMIS devices are measured, which can be easily adopted to analysis of MFMIS device for nonvolatile memory device application.

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Charge retention characteristics of silicon nanocrystals embedded in $SiN_x$ layer for non-volatile memory devices (비휘발성 메모리를 위한 실리콘 나노 결정립을 가지는 실리콘 질화막의 전하 유지 특성)

  • Koo, Hyun-Mo;Huh, Chul;Sung, Gun-Yong;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.101-101
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    • 2007
  • We fabricated floating gate non-volatile memory devices with Si nanocrystals embedded in $SiN_x$ layer to achieve higher trap density. The average size of Si nanocrystals embedded in $SiN_x$ layer was ranging from 3 nm to 5 nm. The MOS capacitor and MOSFET devices with Si nanocrystals embedded in $SiN_x$ layer were analyzed the charging effects as a function of Si nanocrystals size.

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Design of 80 V Grade Low-power Semiconductor Device (80 V급 저전력 반도체 소자의 관한 연구)

  • Sim, Gwan Pil;Ann, Byoung Sup;Kang, Ye Hwan;Hong, Young Sung;Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.3
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    • pp.190-193
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    • 2013
  • Power MOSFET and Power IGBT is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters. In this paper, design the 80V MOSFET Planar Gate type, and design the Trench Gate type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.

Temperature-dependent Electrical Characteristics of Traveling Wave Electro-absorption Modulator (온도 변화에 따른 진행파 전극형 광 변조기의 전기적 특성 변위에 관한 연구)

  • Rhew, Keun-Ho;Yun, Il-Gu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.63-64
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    • 2006
  • Recently, researches for high-speed optical devices have been increased to provide mass data transmission and high-speed optical communication. Optical modulator in the transmission link is one of the crucial devices in total optical network system and it can affect a great effect to the whole transmission properties. In this paper, traveling wave electro-absorption modulator (TWEAM) is examined to ensure high efficiency in the RF range and wide bandwidth. In addition, the temperature-dependence electrical characteristics of TWEAM is investigated. Temperature dependent property variations were characterized using I-V and C-V measurement.

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Effect of carrier collector on the Efficiency of DSSCs

  • Ramasamy, Easwaramoorthi;Lee, Won-Jae;Lee, Dong-Yun;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.633-634
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    • 2005
  • Transparent conducting glasses exhibit high ohmic losses that are apparent in the case of large size Dye Sensitized Solar Cells (DSSCs). In this study, we investigated the impact of current collectors over the efficiency of DSSCs. The Silver current collectors were prepared on both counter electrode and working electrode surface by screen printing method. For long term stability in electrolyte environment and also to avoid the charge recombination, current collectors are protected by sodium silicate overcoat layer. These current collectors were characterized for their microstructure parameters. Also current collector's stability in electrolyte environment has been investigated.

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A Study on Electrical Characteristics of Trench Field Ring for Breakdown Characteristics (내압특성개선을 위한 트렌치 필드링 설계 및 전기적특성에 관한 연구)

  • Kang, Ey-Goo;Kim, Beum-Jun;Lee, Young-Hun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.1
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    • pp.1-5
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    • 2010
  • In this paper, we proposed trench field ring for breakdown voltage of power devices. The proposed trench field ring was improved 10% efficiency comparing with conventional field ring. we analyzed five parameters of trench field ring for design of trench field ring and carried out 2-D devices simulation and process simulations. That is, we analyzed number of field ring, juction depth, distance of field rings, trench width, doping profield. The proposed trench field ring was better to more 1000 V.

Synthesis and Characterization of DNA-Templated Nanostructures: Toward Molecular Electronics

  • Lee, Jeong-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.92.1-92.1
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    • 2013
  • Molecular electronics has been the subject of intese research for many years because of the fundamental interest in molecular charge transport and potential applications, such as (bio)nanosensors and molecular memory devices. Molecular electronics requires a method for making reliable eletrical contacts to singlemolecules. To date, several approaches have been reported: scanning-probe microscopy, mechanical break junctions, nano patterning, and direct deposition of electrode on a self-assembled monolayers. However, most methods are laborious and difficult for large-scale application and more importantly, cannot control the number of moleucles in the junction. Recently, DNA has been used as a template for metallic nanostructures (e.g., Ag, Pd, and Au nanowires) through DNA metallization process. Furthermore, oligodeoxynucleotides have been tethered to organic molecules by using conventional organic reactions. Collectively, these techniques should provide an efficient route toward reliable and reproducible molecular electronic devices with large-scale fabrication. Therefore, I will present a paradigm for the fabrication of moleuclar electronic devices by using micrometer-sized DNA-singe organic molecule and DNA triblock structures.

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Implementing the Smart System for the Safety of the Elderly and the Weak - Focus on Energy Harvest - (노약자의 안전을 위한 스마트 시스템 구현 - 에너지 하베스트를 중심으로 -)

  • Ko, Jooyoung;Kim, Hyenki
    • Journal of Korea Multimedia Society
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    • v.23 no.12
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    • pp.1507-1518
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    • 2020
  • Recently, as the proportion of the elderly population in Korea has increased rapidly, it has entered an aging society. As the scope of social activities of the elderly increases, the risk of safety accidents is also increasing. The traffic accident rate of elderly pedestrians is higher than ordinary people. Although various smart devices for the elderly are researched and developed, electronic components are often used. Electronic devices may not be able to be used if charging is not regularly. In this paper, a smart hat, a smart system for the elderly and the weak, was implemented using solar panels. The system uses solar energy to provide reliable use of smart devices. It is believed to be helpful not only for the elderly but also for the weak people by easy to wear the hat.