• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.763-766
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• 2010

By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.236-238
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• 1997

A cellular power amplifier using an APCVD(Atmospheric Pressure Chemical Vapor Deposition)-grown SiGe base HBT of ETRI has been designed with a linear simulation CAD. The Si/SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0 GHz and a maximum oscillation frequency(f$_{max}$) of 16.1 GHz with a pad de-embedding A packaged power Si/SiGe HBT with an emitter area of 2$\times$8$\times$80${\mu}{\textrm}{m}$$^2$typically shows a f$_{T}$ of 4.7 GHz and a f$_{max}$ of 7.1 GHz at a collector current (Ic) of 115 mA. The power amplifier exhibits a Forward transmission coefficient(S21) of 13.5 dB, an input and an output reflection coefficients of -42 dB and -45 dB respectively. Up to now the III-V compound semiconductor devices hale dominated microwave applications, however a rapid progress in Si-based technology make the advent of the Si/SiGe HBT which is promising in low to even higher microwave range because of lower cost and relatively higher reproducibility of a Si-based process.ess.ess.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.210-213
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• 2005

The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated by the screen printing method on alumina substrates. The effect of the sintering temperature on the microstructure and dielectric properties of the $BaTiO_3/SrTiO_3$ thick films has been investigated. The relative dielectric constant and dielectric loss at 1 MHz of the $BaTiO_3/SrTiO_3$ heterolayered thick films with sintering temperature of $1350^{\circ}C$ were about 751 and 1.74, respectively. The remanent polarization $(P_r)$ of the pure $(Ba_{0.5}Sr_{0.5})TiO_3$ and $BaTiO_3/SrTiO_3$ heterolayered films are approximately $5.1\;{\mu}C/cm^2$ and $10\;{\mu}C/cm^2$. This study suggests that the design of the $BaTiO_3/SrTiO_3$ heterolayered thick films capacitor with different phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.221-224
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• 2005

To overcome of poor electron injection in organic light-emitting diodes (OLEDs) with Al cathode, a thin layer of inorganic insulating materials, like as LiF, is inserted between an Al cathode and an organic electron transport layer. Though the device, mentioned above, improves both turn on voltage and luminescent properties, it has some problems like as thickness restriction, less than 2 nm, and difficulty of deposition control. On the other hand, Li organic complex, Liq, is less thickness restrictive and easy to deposit and it also enhances the performance of devices. This paper reports the improved electron injection on OLEDs with another I A group metal complex, Potassium quinolate (Kq), as an electron injection material. OLEDs with organic complexes showed improved turn-on voltage and luminous efficiency which are remarkably improved compared to OLEDs with Al cathode. Especially, OLEDs with Kq have longer life time than OLEDs with Liq.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.359-361
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• 2006

As circuits become increasingly complex and devices sizes shrinks, the demands placed on global planarization of higher level. Chemical Mechanical Polishing (CMP) is an indispensable manufacturing process used to achieve global planarity. In the CMP process, Diamond Disk (DD) plays an important role in the maintenance of removal rate. According to studies, the cause of removal rate decrease in the early or end stage of diamond disk lifetime comes from pad surface change. We also presented pad cutting rate (PCR) as a useful cutting ability index of DD and studied PCR trend about variable parameters that including size, hardness, shape of DD and RPM, pressure of conditioner It has been shown that PCR control ability of pressure and shape is superior to RPM and size. High pressure leads to a decrease of cell open ratio of pad surface because polyurethane of pad is destroyed by pressure. So low pressure high RPM condition is a proper removal rate sustain. By examining correlations between RPM and pressure of conditioner, it has been shown that PCR safe zoneto satisfy proper removal rate has the range 0.06mm/hr to 0.12mm/hr.

• Annual Conference of KIPS
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• 2002.11c
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• pp.2215-2218
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• 2002

본 논문에서는 핸드폰, PDA 등과 같은 모바일 단말기에 인터넷 서비스를 제공할 수 있는 응용서버인 모바일 응용서버의 설계 및 구현 방법에 대해 제안한다. 제안하는 응용서버는 여러 가지 유형의 모바일 단말기에 공통적으로 서비스할 수 있는 중간 형태의 모바일 응용을 작성하고 이를 요청한 단말기의 특징 및 제약에 따라 적절히 변환된 컨텐츠를 단말기에 보여줌은 물론, 여러 단말기를 이용하여 하나의 세션을 수행할 수 있는 멀티 모달 세션 기능을 지원한다. 응용서버는 크게 세 부분으로 구성된다. 첫째는 모바일 단말기로부터 요청을 받아 모바일 요청(Mobile Request)을 생성하는 모바일 요청 생성부이고, 둘째는 모바일 요청을 받아 특정 응용을 처리하는 모바일 엔진 (Mobile Engine)부이다. 그리고 마지막으로 모바일 단말기 제약 및 무선 통신과 관련된 제약 사항을 해결하기 위한 환경 적응 관련 모듈들이 있다. 이처럼 제안하는 모바일 응용서버는 모바일 환경에서 다양한 단말기를 이용한 서비스를 지원은 물론 멀티 모달 세션을 지원함으로써 보다 다양한 형태의 인터넷 서비스를 효과적으로 제공할 수 있다.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.212-214
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• 2005

The charge-pump circuit which is used to generate higher voltage than the available supply voltage has wide applications such as the flash memory of EEPROM Because the demand for high voltage comes from physical mechanism such as the oxide tunneling, the required pumped voltage cannot be scaled as the power supply voltage is scaled. Therefore, an efficient charge-pump circuit that can achieve high voltage from the available low supply voltage is essential. A new Analog Switch p-well CMOS charge pump circuit without the MOS device body effect is processed. By improve the structure of the circuit's transistors to reduce the threshold voltage shift of the devices, the threshold voltage of the device is kept constant. So, the circuit electrical characteristics are higher output voltage within a shorter time than the conventional charge pump. The propose analog switch CMOS charge pump shows compatible performance of the ideal diode or Dickson charge pump.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.65-78
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• 2017

Single Event Transient has a critical impact on highly integrated logic circuits which are currently common in various commercial and consumer electronic devices. Reliability against the soft and intermittent faults will become a key metric to evaluate such complex system on chip designs. Our previous work analyzing soft errors was focused on parallelizing and optimizing error propagation procedures for individual transient faults on logic and sequential cells. In this paper, we present a new propagation technique where a fault binary decision diagram (BDD) continues to merge every new fault generated from the subsequent logic gate traversal. BDD-based transient fault analysis has been known to provide the most accurate results that consider both electrical and logical properties for the given design. However, it suffers from a limitation in storing and handling BDDs that can be increased in size and operations by the exponential order. On the other hand, the proposed method requires only a visit to each logic gate traversal and unnecessary BDDs can be removed or reduced. This results in an approximately 20-200 fold speed increase while the existing parallelized procedure is only 3-4 times faster than the baseline algorithm.

• Journal of Environmental Health Sciences
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• v.39 no.6
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• pp.483-491
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• 2013

Objectives: Electronic cigarettes are battery powered devices that convert a nicotine-containing liquid into an inhalable vapor. The device aerosolizes nicotine so that it is readily entrained into the respiratory tract, from where it enters the bloodstream. Information on the safety of E-cigarettes is required. Methods: Seventeen articles on studies analyzing toxic substances in the liquid and gas phases of electronic cigarettes were reviewed. Results: Tobacco-specific nitrosamines, bis(2-ethylhexyl) phthalate, formaldehyde and acetaldehyde, known to be carcinogenic agents in humans or animals, were detected in the liquid and gas phases. In addition, diethyl phthalate, acetone, ethanol, cresol, xylene, propylene, styrene, triethylene glycol, tetraethylene glycol, pentaethylene glycol cis-3-hexen-1-ol, methyl cinnamate and undecane were identified in the liquid and gas phases of E-cigarettes. Propylene glycol, glycerin, 1-methoxy-2-propanol, 1-hydroxy-2- propanone, acetic acid, 1-menthone, 2,3-butanediol, menthol, carvone, maple lactone, benzyl alcohol, 2-methyl-2-pentanoic acid, ethyl mantel, ethyl cinnamate, myosamine, benzoic acid, 2,3-bipyridine, cotinine, hexadecanoic acid, and 1'1-oxybis-2-propanol were detected in the vapors of E-cigarettes. Conclusion: The hazardous compounds identified in the liquid and gas phases of E-cigarettes should be controlled for the lowest concentrations in the raw materials and production procedures.

• Journal of the Korean Ceramic Society
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• v.52 no.1
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• pp.23-27
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• 2015

Recently, the use of ion-exchange strengthened glass has increased sharply, as it is now used as the cover glass for smart phone devices. Therefore, many researchers are focusing on methods that can be used to strengthen ion-exchange glass. However, research on how the improved strength can be maintained under thermal environment of device manufacturing is still insufficient. We tested the degradation of the characteristics of ion-exchange soda-lime glass samples, including their surface compressive stress characteristics, the depth of the ion-exchange layer (DOL), flexural strength, hardness, and modulus of rupture (MOR) values. Degradation of the characteristics of the ion-exchange glass samples occurred when they were heat-treated at a temperature that exceeded $350^{\circ}C$.