• Title/Summary/Keyword: Electronic devices

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Design of Communication Module for Virtual Serial Wireless LAN (가상 시리얼 무선랜 통신 모듈 설계)

  • Jang-Geun Ki
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.23 no.5
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    • pp.35-40
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    • 2023
  • In this paper, a serial wireless LAN virtual communication module that allows microprocessors to communicate wirelessly with other peripheral devices is developed as part of a study to build an online virtual experiment system that allows them to practice virtually anytime, anywhere in microprocessor application education in electrical and electronic control engineering. The developed module is connected to the microprocessor in the virtual experiment system through serial interface. The serial data is sent to and received from peripheral devices through the wireless LAN interface of the host computer where the virtual experiment software is being performed. In order to verify the function of the developed serial wireless LAN virtual communication module, experiments were conducted in which a microprocessor in the virtual experiment system exchanged data with an Android smartphone through a wireless LAN interface of a host computer. The developed serial wireless LAN communication module is expected to enable virtual microprocessors to communicate with surrounding real devices through wireless LAN, which can be efficiently used in microprocessor application education.

Micro Light-Emitting Diodes with 3D-Printed Hydrogel Microlens for Optical Property Enhancements (3D 프린팅된 하이드로젤 마이크로렌즈를 통한 마이크로 LED의 광학적 특성 향상 연구)

  • Yujin Ko;Jeong Hyeon Kim;Sang Yoon Park;Kang Hyeon Kim;Seong Min Hong;Bo-Yeon Lee;Han Eol Lee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.5
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    • pp.554-561
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    • 2024
  • Micro light-emitting diodes (µLEDs) have been utilized in various fields such as displays, and smart devices, due to their superior stabilities. Since the applications of the µLEDs have been extended to medical devices and wearable sensors, excellent optical properties and uniformity of the µLEDs are important. Hence, several researchers have investigated to enhance the optical efficiency of the µLEDs through micro/nano lens. However, the reported methods for realizing the micro/nano lens have some drawbacks such as complex and high-cost manufacturing processes. Herein, we developed µLEDs with 3D-printed hydrogel microlenses. The printed hydrogel had high transparency and excellent adhesive strength, allowing it to attach onto top surface of the µLEDs without any additional adhesives. Microscale printing technology using a 3D printer achieved quick and fine printing in desired shapes and arrangements, showing the possibility of mass production. The 3D-printed microlens can be applied to improve not only the optical properties of µLEDs but also other optical devices.

Design of a Wireless Monitoring System for Analyzing the Usage Characteristics of Lithium-ion Batteries (리튬이온 배터리의 사용 특성 분석을 위한 무선 모니터링 시스템 설계)

  • Jae-Yong Park;Yang-Hee Joung;Seong-Jun Kang
    • The Journal of the Korea institute of electronic communication sciences
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    • v.19 no.5
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    • pp.1067-1074
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    • 2024
  • Various monitoring systems are in operation in large-scale production facilities such as Yeosu Industrial Complex and the power equipment for operating these systems uses protective devices with built-in low-power lithium-ion batteries to cope with poor environments. In this study, a wireless monitoring system was designed and implemented to analyze the usage characteristics of these lithium-ion batteries. By using the system, the temperature and humidity of the protective device including the battery, gas generation due to charging and discharging of the battery within the protective device, and changes in battery characteristics can be monitored wirelessly at all times. Through this system, the stable management and power supply of batteries required for monitoring devices in industrial complexes are provided, thereby contributing to the establishment of an efficient operation and management system for factory production facilities.

Review of Failure Mechanisms on the Semiconductor Devices under Electromagnetic Pulses (고출력전자기파에 의한 반도체부품의 고장메커니즘 고찰)

  • Kim, Dongshin;Koo, Yong-Sung;Kim, Ju-Hee;Kang, Soyeon;Oh, Wonwook;Chan, Sung-Il
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.6
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    • pp.37-43
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    • 2017
  • This review investigates the basic principle of physical interactions and failure mechanisms introduced in the materials and inner parts of semiconducting components under electromagnetic pulses (EMPs). The transfer process of EMPs at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers). The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMPs. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMPs transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.

HVPE growth of Mg-doped AlN epilayers for high-performance power-semiconductor devices (고효율 파워 반도체 소자를 위한 Mg-doped AlN 에피층의 HVPE 성장)

  • Bae, Sung Geun;Jeon, Injun;Yang, Min;Yi, Sam Nyung;Ahn, Hyung Soo;Jeon, Hunsoo;Kim, Kyoung Hwa;Kim, Suck-Whan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.27 no.6
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    • pp.275-281
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    • 2017
  • AlN is a promising material for wide band gap and high-frequency electronics device due to its wide bandgap and high thermal conductivity. AlN has advantages as materials for power semiconductors with a larger breakdown field, and a smaller specific on-resistance at high voltage. The growth of a p-type AlN epilayer with high conductivity is important for a manufacturing an AlN-based applications. In this paper, Mg doped AlN epilayers were grown by a mixed-source HVPE. Al and Mg mixture were used as source materials for the growth of Mg-doped AlN epilayers. Mg concentration in the AlN was controlled by modulating the quantity of Mg source in the mixed-source. Surface morphology and crystalline structure of AlN epilayers with different Mg concentrations were characterized by FE-SEM and HR-XRD. XPS spectra of the Mg-doped AlN epilayers demonstrated that Mg was doped successfully into the AlN epilayer by the mixed-source HVPE.

Variation of Transient-response in Open-ended Microstrip Lines with Optically-controlled Microwave Pulses

  • Wang, Xue;Kim, Kwan-Woong;Kim, Yong-K.
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.2
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    • pp.53-57
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    • 2009
  • In this paper we develop a method to observe faults in semiconductor devices and transmission lines by calculating the variation of the reflection function in a dielectric microstrip line that has an open-ended termination containing an optically induced plasma region. It is analyzed with the assumption that the plasma is distributed homogeneously in laser illumination. With the non linear material of degradation, the concentration of the carrier in the part of the material has changed. Since the input wave has produced the phenomenon of reflection, the input signal to the open-ended microstrip lines can be observed on reflection to identify the location of the fault. The characteristic impedances resulting from the presence of plasma are evaluated by the transmission line model. The variation of the reflection wave in the microwave system has been calculated by using an equivalent circuit model. The transient response has been also evaluated theoretically for changing the phase of the variation in the reflection. The variation of characteristic response in differentially localized has been also evaluated analytically.

A pairing-free key-insulated certificate-based signature scheme with provable security

  • Xiong, Hu;Wu, Shikun;Geng, Ji;Ahene, Emmanuel;Wu, Songyang;Qin, Zhiguang
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.9 no.3
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    • pp.1246-1259
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    • 2015
  • Certificate-based signature (CBS) combines the advantages of both public key-based signature and identity-based signature, while saving from the disadvantages of drawbacks in both PKS and IBS. The insecure deployment of CBS under the hostile circumstances usually causes the exposure of signing key to be inescapable. To resist the threat of key leakage, we present a pairing-free key insulated CBS scheme by incorporating the idea of key insulated mechanism and CBS. Our scheme eliminates the costly pairing operations and as a matter of fact outperforms the existing key insulated CBS schemes. It is more suitable for low-power devices. Furthermore, the unforgeability of our scheme has been formally proven to rest on the discrete logarithm assumption in the random oracle model.

On demand nanowire device decalcomania

  • Lee, Tae-Il;Choi, Ji-Hyuck;Moon, Kyung-Ju;Jeon, Joo-Hee;Myoung, Jae-Min
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.11a
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    • pp.26.1-26.1
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    • 2009
  • A simple route of external mechanical force is presented for enhancing the electrical properties of polymer nanocomposite consisted of nanowires. By dispersing ZnO nanowires in polymer solution and drop casting on substrates, nanocomposite transistors containing ZnO nanowires are successfully fabricated. Even though the ZnO nanowires density is properly controlled for device fabrication, as-cast device doesn't show any detectable currents, because nanowires are separated far from each other with the insulating polymer matrix intervening between them. Compared to the device pressed at 300 kPa, the device pressed at 600 kPa currents increased by 50times showing the linear behavior against drain voltage and exhibits promising electrical properties, which operates in the depletion mode with higher mobility and on-current. Such an improved device performance would be realized by the contacts improvement and the increase of the number of electrical path induced by external force. This approach provides a viable solution for serious contact resistance problem of nanocomposite materials and promises for future manufacturing of high-performance devices.

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A Noel Soft-Switching AC-DC Converter using $L^2SC$

  • Kim C. S.;Lee H. W.;Suh K. Y.;Kim H. D.;Kim K. T.
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.271-275
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    • 2001
  • In this paper, proposes a novel AC-DC converter of high power factor and high efficiency by partial resonant method. The input current waveform in proposed circuit is got to be a discontinuous sinusoidal form in proportion to magnitude of ac input voltage under the constant duty cycle switching. Thereupon, the input power factor is nearly unity and the control circuit is simple. Also the switching devices in a proposed circuit are operated with soft switching by the partial resonant method. The result is that the switching loss is very low and the efficiency of system is high. The partial resonant circuit makes use of a inductor using step up and $L^2SC$ (Loss-Less Snubber Condenser). The switching control technique of the converter is simplified for switches to drive in constant duty cycle. Some simulative results and experimental results are included to confirm the validity of the analytical results.

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High Performance Wilkinson Power Divider Using Integrated Passive Technology on SI-GaAs Substrate

  • Wang, Cong;Qian, Cheng;Li, De-Zhong;Huang, Wen-Cheng;Kim, Nam-Young
    • Journal of electromagnetic engineering and science
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    • v.8 no.3
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    • pp.129-133
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    • 2008
  • An integrated passive device(IPD) technology by semi-insulating(SI)-GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal(MIM) capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost by only 6 process layers. This paper presents the Wilkinson power divider with excellent performance for digital cellular system(DCS). The insertion loss of this power divider is - 0.43 dB and the port isolation greater than - 22 dB over the entire band. Return loss in input and output ports are - 23.4 dB and - 25.4 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within die size of $1.42\;mm^2$.