• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1463-1465
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• 1994

The electrical characteristics of $Al/Ta_2O_5/Si$ metal-oxide-semiconductor (MOS) capacitors were studied. $Ta_2O_5$ films on p-type silicon had been prepared by ionized cluster beam epitaxy technique (ICBE). This $Ta_2O_5$ films have low leakage current, high breakdown strength and low flat band shift. In this research, a single crystalline cpitaxial film of $Ta_2O_5$ has been grown on p-Si wafer using an ICBE technique. The native oxide layer ($SiO_2$) on the silicon substrate was removed below $500^{\circ}C$ by use of an accelerated arsenic ion beam, instead of a high temperature deposition. $Ta_2O_5$ films formed by ICBE technique can be received considerable attention for applications to coupling capacitors, gate dielectrics in MOS devices, and memory storage capacitor insulator because of their high dielectric constants above 20 and low temperature process.

• 전기학회논문지
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• 제58권2호
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• pp.232-238
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• 2009

Flicker, also known as voltage fluctuation, is a newest problem of power quality issues, because it is caused by nonlinear loads such as electrical arc furnace and large-scale induction motor, which are country-widely used as the heavy industries of a country develop. An international standard, International Electrotechnical Commission (IEC) 61000-4-15, was published in 1997 and revised in 2003. With increasing concerns about flicker, its mitigation methods have been also studied. General countermeasures for flicker are divided into three categories: a) enhancing the capacity of supplying system, b) Series elements including series reactor and series capacitor and c) power electronic devices including static VAR compensator (SVC) and static synchronous compensator (STATCOM). This paper introduces how to mitigate the voltage flicker at the point of common coupling (PCC) and presents how to simulate and compare the flicker alleviating effects by each mitigation method, using IEC flickermeter based on the Matlab/Simulink program.

• 전력전자학회논문지
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• 제6권1호
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• pp.74-81
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• 2001

스위치드 릴럭턴스 모터(이하 SRM) 구동을 위한 센서리스 설계는 노이즈에 민감하기 때문에 이에 대한 강인성과 신뢰성이 있어야 한다. SRM 구동시에 이들 성분은 소선호 전자회로와 함께 대전류 전력회로와 근접되어 전기적으로 노이즈 환경을 만든다. 또한, 쇄교 인덕턴스와 유한 커플링 캐패시턴스에 의해 어떤 저전압 전류와 전압 측정회로에 노이즈를 일으킬 수 있다. 노이즈를 포함한 전류와 전압은 센서리스 알고리즘의 입력 값으로 사용되기 때문에 위치추정에 대한 오차를 발생한다. 본 논문에서는 입력 노이즈에 대한 높은 강인성과 저항성을 기술하며 퍼지 논리 기반 회전자 위치 추정 알고리 즘과 관측기 모델이 입력 데이터의 오차를 줄이기 위해 사용하였다.

• 한국통신학회논문지
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• 제34권9C호
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• pp.880-886
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• 2009

메모리는 최근 많은 전자제품에 이용되면서 많은 연구자들이 메모리에 대한 연구를 진행하고 있다. 그중, 단위 면적당 저장용량을 증가하기 위한 많은 연구들이 진행되고 있는데, 단위 면적당 저장용량을 증가하기 위하여 메모리의 공정의 크기를 줄이는 연구 뿐 아니라, 최근에는 한 셀에 2비트 이상의 데이터를 저장 할 수 있는 멀티 레벨 셀 메모리의 연구가 진행되고 있다. 하지만, 한 셀에 멀티 비트를 저장하게 되면서 다양한 오류들로 인하여 저장된 데이터를 정확히 읽는 데 어려움이 많다. 본 논문에서는 멀티 레벨 셀 메모리의 오류의 요인을 분석하고 그에 대한 멀티 레벨 셀 메모리의 채널을 모델링 하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1488-1490
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• 2000

ZnO:Cu thin films are deposited by using an RF magnetron co-sputtering system with Cu chips attached on ZnO target. Structural and electrical properties are analyzed as a function of deposition conditions, such as Cu chip areas, $O_2/(Ar+O_2)$ ratios, and working pressures, The results show that a higher electrical resistivity above $10^{10}$ ${\Omega}cm$ along with an excellent c-axial growth can be easily achieved by Cu-doping. SAW filters based on the ZnO:Cu films are also fabricated to estimate the electric-mechanical coupling coefficient($K^{2}_{eff}$). Higher $K^{2}_{eff}$ and lower insertion losses are observed for ZnO:Cu films, compared with those for ZnO films.

• Molecules and Cells
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• 제40권8호
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• pp.523-532
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• 2017

Functional near-infrared spectroscopy (fNIRS) is a noninvasive optical imaging technique that indirectly assesses neuronal activity by measuring changes in oxygenated and deoxygenated hemoglobin in tissues using near-infrared light. fNIRS has been used not only to investigate cortical activity in healthy human subjects and animals but also to reveal abnormalities in brain function in patients suffering from neurological and psychiatric disorders and in animals that exhibit disease conditions. Because of its safety, quietness, resistance to motion artifacts, and portability, fNIRS has become a tool to complement conventional imaging techniques in measuring hemodynamic responses while a subject performs diverse cognitive and behavioral tasks in test settings that are more ecologically relevant and involve social interaction. In this review, we introduce the basic principles of fNIRS and discuss the application of this technique in human and animal studies.

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권3호
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• pp.91-98
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• 2003

The importance of improving the quality of electric power is being strongly raised, owing to an increasing use of sensitive and small-sized electronic devices and systems. The transient over-voltages on low-voltage power distribution systems are induced by direct or indirect lightning return strokes. These can cause damage and/or malfunction of the utility systems for home automation, office automation, factory automation, medical automation, etc. The behaviors of lightning overvoltages transferred through the transformer to the low-voltage distribution systems using a Marx generator were experimentally investigated. Furthermore, the coupling mechanisms of lightning overvoltages transferred to the low-voltage systems were clearly illustrated through a theoretical simulation using a Pspice program. The overvoltages in low-voltage ac power systems are rarely limited by the application of the surge arrester to the primary side of the distribution transformer. A superior surge protection scheme is to install surge protection devices at the service entrance switchboard and/or at the load devices in TN power systems.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.63-63
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• 2010

Ability to transport extracted carriers from NQDs is essential for the development of most NQD based applications. Strategies to facilitate carrier transport while preserving NQDs' optical characteristics include: 1) Fabricating neat films of NQDs with modified surfaces either by adapting series of ligands with certain limitations or by applying physical processes such as heat annealing 2) Coupling of NQDs to one-dimensional nanostructures such as single walled carbon nanotubes (SWNTs) or various types of nanowires. NQD-nanowire hybrid nanostructures are expected to facilitate selective wavelength absorption, charge transfer to 1-D nanostructures, and efficient carrier transport. Even with the vast interests in using NQD-SWNT hybrid materials in optoelectric applications, still, no reports so far have clearly elucidated the optoelectric behavior when they were assembled on the FET mainly because the complexity involving in both components in their preparation and characterization. We have monitored the optical properties of both components (NQDs, SWNTs) from the synthesis, to the assembly, and to the device. More importantly, by using pyridine molecules as a linker to non-covalently attach NQDs to SWNTs, we were able to assemble NQDs on SWNTs with precise density control without harming their electronic structures. Furthermore, by measuring electrical signals from the fabricated aligned SWNTs-FET using dielectrophoresis (DEP), we were able to elucidate the charge transfer mechanism.

• 한국재료학회지
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• 제32권8호
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• pp.339-344
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• 2022

The lattice oxygen mechanism (LOM) is considered one of the promising approaches to overcome the sluggish oxygen evolution reaction (OER), bypassing -OOH^* coordination with a high energetic barrier. Activated lattice oxygen can participate in the OER as a reactant and enables O^*-O^* coupling for direct O₂ formation. However, such reaction kinetics inevitably include the generation of oxygen vacancies, which leads to structural degradation, and eventually shortens the lifetime of catalysts. Here, we demonstrate that Se incorporation significantly enhances OER performance and the stability of NiFe (oxy)hydroxide (NiFe) which follows the LOM pathway. In Se introduced NiFe (NiFeSe), Se forms not only metal-Se bonding but also Se-oxygen bonding by replacing oxygen sites and metal sites, respectively. As a result, transition metals show reduced valence states while oxygen shows less reduced valence states (O^-/O₂^2-) which is a clear evidence of lattice oxygen activation. By virtue of its electronic structure modulation, NiFeSe shows enhanced OER activity and long-term stability with robust active lattice oxygen compared to NiFe.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권12호
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• pp.654-664
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• 2000

Thin films of ZnO are deposited by using an RF magnetron sputtering with varying the substrate temperature(RT~39$0^{\circ}C$) and RF power(50~250W). Cu-doped ZnO(denoted by ZnO:Cu) films have also been prepared by co-spputtering of a ZnO target on which some Cu-chips are attached. Different substrate materials, such as Si, $SiO_{2}/Si$, sapphire, DLC/Si, and poly-diamond/Si, are employed to compare the c-axial growth features of deposited ZnO films. Texture coefficient(TC) values for the (002)-preferential growth are estimated from the XRD spectra of deposited films. Optimal ranges of RF powers and substrate temperatures for obtaining high TC values are determined. Effects of Cu-doping conditions, such as relative Cu-chip sputtering areas, $O_{2}/(Ar+O_{2})$ mixing ratios, and reactor pressures, on TC values, electrical resistivities, and relative Cu-compositions of deposited ZnO:Cu films have been systematically investigated. XPS study shows that the relative densities of metallic $Cu(Cu^{0})$ atoms and $CuO(Cu^{2+})$-phases within deposited films may play an important role of determining their electrical resistivities. It should be noted from the experimental results that highly resistive(> $10^{10}{\Omega}cm$ ZnO films with high TC values(> 80%) can be achieved by Cu-doping. SAW devices with ZnO(or Zn):Cu)/IDT/$SiO_{2}$/Si configuration are also fabricated to estimate the effective electric-mechanical coupling coefficient($k_{eff}^{2}$) and the insertion loss. It is observed that the devices using the Cu-doped ZnO films have a higher $k_{eff}^{2}$ and a lower insertion loss, compared with those using the undoped films.