• Title/Summary/Keyword: Electronic control type

Search Result 715, Processing Time 0.029 seconds

Expansion Valves Characteristics for Development of Control System on Air Conditioning and Refrigeration Systems (공조.냉동장치의 제어시스템 개발을 위한 팽창밸브 특성)

  • Kim, J.D.;Jang, J.E.;Yoon, J.I.
    • Journal of Power System Engineering
    • /
    • v.2 no.3
    • /
    • pp.34-40
    • /
    • 1998
  • Performance characteristics of a refrigeration systems with various expansion valves and superheat changes were investigated experimentally. Experimental data have been taken utilizing three different devices; a thermostatic expansion valve, a linear type electronic expansion valve and a solenoid type electronic expansion valve. The data taken from tile three types of expansion valves were discussed with the temperature distribution of each zone in the evaporator and the superheat changes of the evaporator outlet In each zone temperature distribution fluctuated larger with the thermostatic expansion valve than with the electronic expansion valves. The optimum superheat ranged from $5^{\circ}C\;to\;15^{\circ}C$, and the superheat with the thermostatic expansion valve showed hunting phenomenon, which affected the evaporating and condensing temperature.

  • PDF

The Study of Using Separate Heatpipes for Thermal Control in Electronic Equipments (분리형 히트파이프를 이용한 전자장비내 발열체의 온도제어에 관한 연구)

  • 배석태
    • Journal of Advanced Marine Engineering and Technology
    • /
    • v.27 no.2
    • /
    • pp.305-311
    • /
    • 2003
  • This Paper Presents an information about the heat transfer characteristics of a separate type thermosyphon in electronic equipments. The heat removal problem of electronic equipments is regarded as an important factor and a separate type heatpipes can be utilized as a cooling device of electronic equipments (such as CPU of a Personal computer or notebook). In this study. heat source ($50\times50\times2 mm $aluminum Pseudo CPU) was used for the experiment. The device can transfer heat from the evaporator to the condenser through natural circulation (without any external driving forces) and the results indicate that the device is capable of dissipating over 60W of thermal energy and keeping the heating plate surface temperature under $50^{\circ}C$.

Characterization of Lateral Type Field Emitters with Carbon-Based Surface Layer

  • Lee, Myoung-Bok;Lee, Jae-Hoon;Kwon, Ki-Rock;Lee, Hyung-Ju;Hahm, Sung-Ho;Lee, Jong-Hyun;Lee, Jung-Hee;Choi, Kyu-Man
    • Journal of Information Display
    • /
    • v.2 no.3
    • /
    • pp.60-65
    • /
    • 2001
  • Lateral type poly-silicon field emitters were fabricated by utilizing the LOCOS (Local Oxidation of Silicon) process. For the implementation 'of an ideal field emission device with quasi-zero tunneling barrier, a new and fundamental approach has used conducted by introducing an intelligent carbon-based thin layer on the cathode tip surface via a field-assisted self-aligning of carbon (FASAC) process. Fundamental lowering of the turn-on field for the electron emission was feasible through the control of both the tip shape and surface barrier height.

  • PDF

An Allocation of Safety Integrity Level to Inductive Loop type Train Control System (유도루프식 열차제어시스템 안전무결성등급 할당)

  • Ryou, Sung-Kyun;Park, Jae-Young;Yun, Hak-Sun
    • The Journal of the Korea institute of electronic communication sciences
    • /
    • v.8 no.12
    • /
    • pp.1905-1910
    • /
    • 2013
  • This paper demonstrates the result of Safety Integrity Level (SIL) allocation for IL-type Train Control System(IL-TCS), by applying the semi-quantitative approach. IL-type TCS is defined in this paper as the set of Hardware and Software ATS equipment, Track-side ATP equipment, On-board ATP equipment, Track-side ATO equipment, On-board ATO equipment. SIL allocation is performed for these constituent subsystems of TCS. Based on three principles of the semi-quantitative method, the SIL allocation process is performed for the subsystems composing TCS.

Optimal design of the PID Controller using a predictive control method

  • Kim, Sang-Joo;Lee, Jang-Myung
    • International Journal of Fuzzy Logic and Intelligent Systems
    • /
    • v.5 no.1
    • /
    • pp.69-75
    • /
    • 2005
  • This paper is concerned with the design of a predictive PID controller, which has similar features to the model-based predictive controller. A PID type control structure is defined which includes prediction of the outputs and the recalculation of new set points using the future set point data. The optimal values of the PID gains are pre-calculated using the values of gains calculated from an unconstrained generalized predictive control algorithm. Simulation studies demonstrate the performance of the proposed controller and the results are compared with generalized predictive controller and the results are compared with generalized predictive control solutions.

A New Current Controlled Inverter with ZVT Switching

  • Lee S. R.;Jeon C. H.;Ko S. H.
    • Proceedings of the KIPE Conference
    • /
    • 2001.10a
    • /
    • pp.309-313
    • /
    • 2001
  • A single-phase bi-directional inverter with a diode bridge-type resonant circuit to implement ZVT(Zero Voltage Transition) switching is proposed. It is shown that the polarized ramptime current control algorithm, a method that belongs to the family of ZACE(Zero Average Current Error) methods, is a suitable technique to integrate with a typical single-phase ZVT inverter. The proposed current control algorithm is analyzed to design the circuit with auxiliary switch which can operate with ZVT for the main power switch. The simulation results would be shown to verify the proposed current algorithm to turn the main power switch on with ZVT and to operate the inverter bi-directionally

  • PDF

Development and Evaluation of Rack Type Piezoelectric Harvester for Smart Street Lamps Control (가로등 제어용 다층패드형 압전 하베스터의 개발 및 평가)

  • Kim, Chang-Il;Jeong, Young-Hun;Park, Woon Ik;Cho, Jeong-Ho;Jang, Yong-Ho;Choi, Beom-Jin;Park, Shin-Seo;Paik, Jong-Hoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.29 no.11
    • /
    • pp.696-701
    • /
    • 2016
  • In this study, to increase output of road piezoelectric energy harvester, it was made into rack type in which many piezoelectric materials can be installed and load transfer device of the leverage type to transfer vehicle load was made. By paving it in the road, the output characteristics depending on vehicle load and speed were evaluated. Changing vehicle load, harvester output characteristics depending on speed changes were evaluated at the interval of 10 km/h from 10 km/h to 100 km/h. Also, by making a wireless switch and sending wireless signal with output of rack type harvester, whether to receive it was evaluated by distance. It was checked that all switches work up to front-to-back 100 m from harvester.

The Effect of in situ Ultraviolet Irradiation on the Chemical Vapor Deposited ZnO Thin Films (증착 중 자외광 노광에 의한 산화 아연 박막의 특성 변화)

  • Kim, Bo-Seok;Baik, Seung Jae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.29 no.4
    • /
    • pp.241-246
    • /
    • 2016
  • ZnO thin films have wide application areas due to its versatile properties as transparent conductors, wide-bandgap n-type semiconductors, gas sensor materials, and etc. We have performed a systematic investigation on ultraviolet-assisted CVD (chemical vapor deposition) method. Ultraviolet irradiation during the deposition of ZnO causes chemical reduction on the growing surface; which results in the reduction of the deposition rate, increase in the surface roughness, and decrease of the electrical resistivity. These effects produce larger characteristic variation with various deposition conditions in terms of surface morphology and optical/electrical properties compared to normal CVD deposited ZnO thin films. This versatile controllability of ultraviolet-assisted CVD can provide a larger processing options in the fabrication of nano-structured materials and flexible device applications.

Driving Method of Ultraviolet Sensor for Fire alarms using Pulse Width Modulation (PWM을 이용한 화재 감지를 위한 자외선 센서의 구동 방법)

  • Lim, Byung-Hyun;Ko, Nak-Yong;Hwang, Jong-Sun;Kim, Yeong-Min
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.05c
    • /
    • pp.31-35
    • /
    • 2004
  • We propose driving method of Ultraviolet sensor for fire alarms using pulse width modulation that used to fire detector with sensor of private-use detectable light energy as ultraviolet in energy of electromagnetic-wave type radiate from flame, when combustible burn with contain carbon,. Ultraviolet sensor is UV Tron using gas multiplication effect to current discharge and photoelectric effect of metal. To have high sensibility and to gain proper output voltage, it has high responsive performance. This research designed driving circuit with UV sensors and proposed method of false alarm reduced to resemble fire. the result propers the prevention and extinction of fire technique degree, certificated operation of detector.

  • PDF

Synthesis and application of Pt and hybrid Pt-$SiO_2$ nanoparticles and control of particles layer thickness (Pt 나노입자와 Hybrid Pt-$SiO_2$ 나노입자의 합성과 활용 및 입자박막 제어)

  • Choi, Byung-Sang
    • The Journal of the Korea institute of electronic communication sciences
    • /
    • v.4 no.4
    • /
    • pp.301-305
    • /
    • 2009
  • Pt nanoparticles with a narrow size distribution (dia. ~4 nm) were synthesized via an alcohol reduction method and used for the fabrication of hybrid Pt-$SiO_2$ nanoparticles. Also, the self-assembled monolayer of Pt nanoparticles (NPs) was studied as a charge trapping layer for non-volatile memory (NVM) applications. A metal-oxide-semiconductor (MOS) type memory device with Pt NPs exhibits a relatively large memory window. These results indicate that the self-assembled Pt NPs can be utilized for NVM devices. In addition, it was tried to show the control of thin-film thickness of hybrid Pt-$SiO_2$ nanoparticles indicating the possibility of much applications for the MOS type memory devices.

  • PDF