• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.392-397
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• 2012

In the $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1})O_3$ (LCCC), which has been using as interconnector materials in SOFC, Al ions were substituted for Co because ionic radius of Al is similar to that of Co. Because of the almost identical ionic radius of Al and Co, the substitution was not thought to be affect the tolerance factor of LCCC, and the densification behavior, high temperature electrical conductivity and thermal expansion coefficient were examined as a function of Al concentration. In the cases of the x= 0 and x= 0.02 in $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1-x}Al_x)O_3$ (x= 0~0.1), the samples showed the relative densities above ${\geq}95%$ when those were sintered at ${\geq}1,350^{\circ}C$. In the case of the $x{\geq}0.06$ the sintered density deteriorated greatly at lower sintering temperatures. High temperature electrical conductivity of the samples decreased as the content of Al increased. Since the valence state of Al ion is unchangeable, while Cr or Co ions contribute to the electrical conduction by changing those valence states, Al substitution resulted in the decreased electrical conductivity. Al doping of LCCC was an effective way of decreasing the thermal expansion coefficient (TEC).

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.117.2-117.2
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• 2011

Since Gratzel and co-workers developed a new type of solar cell based on the nanocrystalline TiO2 electrode, dye-sensitized solar cells (DSSCs) have attracted considerable attention on account of their high solar energy-to-conversion efficiencies (11%), their easy manufacturing process with low cost production compared to conventional p-n junction solar cells. The mechanism of DSSC is based on the injection of electrons from the photoexcited dye into the conduction band of nanocrystalline TiO2. The oxidized dye is reduced by the hole injection process from either the hole counter or electrolyte. Thus, the electronic structures, such as HOMO, LUMO, and HOMO-LUMO gap, of dye molecule in DSSC are deeply related to the electron transfer by photoexcitation and redox potential. To date, high performance and good stability of DSSC based on Ru-dyes as a photosensitizer had been widely addressed in the literatures. DSSC with Ru-bipyridyl complexes (N3 and N719), and the black ruthenium dye have achieved power conversion efficiencies up to 11.2% and 10.4%, respectively. However, the Ru-dyes are facing the problem of manufacturing costs and environmental issues. In order to obtain even cheaper photosensitizers for DSSC, metal-free organic photosensitizers are strongly desired. Metal-free organic dyes offer superior molar extinction coefficients, low cost, and a diversity of molecular structures, compared to conventional Ru-dyes. Recently, novel photosensitizers such as coumarin, merocyanine, cyanine, indoline, hemicyanine, triphenylamine, dialkylaniline, bis(dimethylfluorenyl)-aminophenyl, phenothiazine, tetrahydroquinoline, and carbazole based dyes have achieved solar-to-electrical power conversion efficiencies up to 5-9%. On the other hand, organic dye molecules have large ${\pi}$-conjugated planner structures which would bring out strong molecular stacking in their solid-state and poor solubility in their media. It was well known that the molecular stacking of organic dyes could reduce the electron transfer pathway in opto-electronic devices, significantly. In this paper, we have studied on synthesis and characterization of dendritic organic dyes with different number of electron acceptor/anchoring moieties in the end of dendrimer. The photovoltaic performances and the incident photon-to-current (IPCE) of these dyes were measured to evaluate the effects of the dendritic strucuture on the open-circuit voltage and the short-circuit current.

• Journal of the Korean Chemical Society
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• v.35 no.6
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• pp.625-629
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• 1991

The electrical conductivity of the Niobium Oxide-Lead Oxide systems containing 2.5, 5.0, 7.5, and 10.0 mol% of Lead Oxide has been measured in a temperature range 700${\sim}$$1100^{\circ}C$ under oxygen partial pressure of 2.0 ${\times}$ $10^{-1}$${\sim}$1.0 ${\times}$ $10^{-5}$ atm. The electrical conductivities of the system decreased with increasing PbO mol% and varied from $10^{-5}$ to $10^{-1}$ $ohm^{-1}$ $cm^{-1}$. The activation energy for conductivity was about 1.70 eV. The oxygen pressure dependence of electrical conductivity revealed that the system was a mixed conductor between ionic and electronic conductivities at high oxygen pressures and a n-type electronic conductivity with oxygen pressure dependence of -1/4 order at low oxygen pressures. The defect structure and electrical conduction mechanism of the system have been discussed with the data obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.597-601
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• 2013

The accelerated thermal aging of a CSPE were carried out for 0, 80.82, 161.63 days at $100^{\circ}C$, which are equal to 0, 40 and 80 years of aging at $50^{\circ}C$, respectively. The volume electrical resistivities of the seawater and freshwater flooding were measured through 3-terminal circuit diagram. The volume electrical resistivities of the 0y, 40y and 80y were $2.454{\times}10^{13}{\sim}1.377{\times}10^{14}{\Omega}{\cdot}cm$, $1.121{\times}10^{13}{\sim}7.529{\times}10^{13}{\Omega}{\cdot}cm$ and $1.284{\times}10^{13}{\sim}8.974{\times}10^{13}{\Omega}{\cdot}cm$ at room temperature, respectively. The dielectric constant of the 0y, 40y and 80y were 2.922~3.431, 2.613~3.285 and 2.921~3.332 at room temperature, respectively. It is certain that the ionic ($Na^+$, $Cl^-$, $Mg^{2+}$, ${SO_4}^{2-}$, $Ca^{2+}$, $K^+$) conduction current was formed by the salinity of the seawater. The volume electrical resistivity of the cleaned CSPE via freshwater trends slightly upward with the number of dried days at room temperature. As a result, the $CH_2$ component of thermally accelerated aged CSPE decreased after seawater and freshwater flooding for 5 days respectively, whereas the atoms such as Cl, O, Pb, Al, Si, Sb, S related with the conducting ion ($Na^+$, $Cl^-$, $Mg^{2+}$, ${SO_4}^{2-}$, $Ca^{2+}$, $K^+$) component increased relatively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.14-15
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• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

• Journal of the Korean Solar Energy Society
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• v.39 no.4
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• pp.1-9
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• 2019

Modules using 6 inch cells have problems with loss due to empty space between cells. To solve this problem made by shingled structure which can generate more power by utilizing empty space by increasing the voltage level than modules made in 6inch cell. Thus, in this paper, the c-Si cutting cells were produced using nanosecond green laser, and then the ECA was sprayed and cured to perform cutting cell bonding. Three types of ECA materials (B1, B2, B3) with Ag as the main component were used, and experimental conditions varied from 5 to 120 seconds of curing time, 130 to $210^{\circ}C$ of curing temperature, and 1 to 3 of curing numbers. As a results of experiments varying curing time, B1 showed efficiency 19.88% in condition of 60 seconds, B2 showed efficiency 20.15% in 90 seconds, and B3 showed efficiency 20.27% in 60 seconds. In addition, experiments with varying curing temperature, It was confirmed highest efficiency that 20.04% in condition of $170^{\circ}C$ with B1, 20.15% in condition of $150^{\circ}C$ with B2, 20.27% in condition of $150^{\circ}C$ with B3. These are because the Ag particles are densely formed on the surface to make the conduction path. After optimizing the conditions of temperature and curing time, the secondary-tertiary curing experiments were carried out. as the structural analysis, conditions of secondary-tertiary curing showed cracks that due to damp heat aging. As a result, it was found that the ECA B3 had the highest efficiency of 20.27% in condition of 60 seconds of curing time, $150^{\circ}C$ of curing temperature, and single number of curing, and that it was suitable for the manufacture of Solar cell of shingled structure rather than ECA B1 and B2 materials.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.5
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• pp.499-506
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• 2019

This paper is concerned with the operating stability of 7kW inverter using SIC hybrid module and verifies the validity of the simulation results by comparing the result of the loss equation and the simulation result, Simulation results using Si module and SiC hybrid module are compared to compare switch loss and diode loss. Through the loss equation calculation, the conduction loss of SiC Hybrid module is 168W, switching loss is 9.3W, diode loss is 10.5nW, When compared with the simulation results, similar values were shown. As a result of comparing the simulation results of the Si module and the SiC Hybrid module, The total device loss of the Si module was 246.2W, and the total device loss of the SiC Hybrid module was 189.9W. The loss difference was 56.3W, which was about 0.8W. thereby verifying the reverse recovery characteristics of the SiC SBD. In addition, temperature saturation test was conducted to confirm the stability of SiC Hybrid module and Si module under high temperature saturation, In the case of the Si module, the output power was stopped at 4kW, and the SiC Hybrid module was confirmed to operate at 7kW. Based on this, an efficiency graph and a temperature graph are presented, and the Si module is graphed up to 4kW and the SiC Hybrid module is graphed up to 7kW.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.275-279
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• 2023

La_0.7Sr_0.3-xMg_xMnO₃ (LSMMO) (x=0.05~0.20) specimens are fabricated by a solid phase sintering method, and the sintering temperature and time are 1,300℃ and 2 hours, respectively. The dependence of the crystalline structure according to the amount of Mg²⁺ contents is not observed, and all specimens show a polycrystalline rhombohedral crystal structure, the X-ray diffraction (110) peaks move to the high angle side with increasing the amount of Mg²⁺ contents. LSMMO specimens exhibit a granule-shaped microstructure with an average grain size of 1 ㎛ or less. Resistivity gradually decrease as the amount of Mg²⁺ contents increased. And in the La_0.7Sr_0.1Mg_0.2MnO₃ specimen, resistivity and B_25/65-value are 36.7 Ω-cm and 394 K at room temperature, respectively. LSMMO specimens show a variable-range hopping (VRH) electrical conduction mechanism, and the negative temperature of coefficient of resistance (NTCR) is approximately 0.37~0.38%/℃.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.43-48
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• 2024

The discovery of a two-dimensional electron gas (2DEG) at the interface of LaAlO₃ (LAO) and SrTiO₃ (STO) substrates has sparked significant interest, providing a foundation for cutting-edge research in electronic devices based on complex oxide heterostructures. However, conventional methods for producing LAO thin films, typically employing techniques like pulsed laser deposition (PLD) within physical vapor deposition (PVD), are associated with high costs and challenges in precisely controlling the La and Al composition within LAO. In this study, we adopted a cost-effective alternative approach-solution-based processing-to fabricate LAO thin films and investigated their electrical properties. By adjusting the concentration of the precursor solution, we varied the thickness of LAO films from 2 to 65 nm and determined the sheet resistance and carrier density for each thickness. After vacuum annealing, the sheet resistance of the conductive channel ranged from 0.015 to 0.020 Ω·s^-1, indicating that electron conduction occurs not only at the LAO/STO interface but also into the STO bulk region, consistent with previous studies. These findings demonstrate the successful formation and control of 2DEG through solution-based processing, offering the potential to reduce process costs and broaden the scope of applications in electronic device manufacturing.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.461-467
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• 2011

The valence band maximum and the conduction band miminum of GaAs, GaSb, InAs, and InSb (constituent binaries of the quaternaty alloy $Ga_xIn_{1-x}Sb_yAs_{1-y}$) are calculated by using TB analytical approach method. The band alignment types of their heterojunctions are determined directly from their relative position of band edges (VBM and CBM). For example, the GaAs/InAs, GaAs/InSb, and GaSb/InSb are in a type-I, the GaAs/GaSb in a type-II, and the GaSb/InAs and InSb/InAs in a type-III, respectively. The composition dependent VBM and CBM for the $Ga_xIn_{1-x}Sb_yAs_{1-y}$ alloy are obtained by using the univeral tight binding method. For the alloyed heterojunctions, the band alignments can be controlled by changing the composition which induce a band type transition. For the alloy $Ga_xIn_{1-x}Sb_yAs_{1-y}$ lattice mathced to GaSb, the type-II band alignment in the region of $x{\leq}0.15$ is changed to the type-III in the region of $x{\geq}0.81$. On the other hand, the alloy $Ga_xIn_{1-x}Sb_yAs_{1-y}$ lattice mathced to InAs has the type-II band alignment in the region of $x{\leq}0.15$ and the type-III band alignment in the region of $x{\geq}0.81$, respectively.