• 한국전기전자재료학회논문지
• /
• 제20권8호
• /
• pp.711-715
• /
• 2007

Properties of organic light-emitting diodes (OLEDs) with aluminum-doped zinc oxide (ZnO:Al) anodes showed different behaviors from OLEDs with indium tin oxide (ITO) anodes according to driving conditions. OLEDs with ITO anodes gave higher current density and luminance in lower voltage region and better EL and power efficiency under lower current density conditions, However, OLEDs with ZnO:Al anodes gave higher current density and luminance in higher voltage region over about 8V and better EL and power efficiency under higher current density over $200mA/cm^2$. These seemed to be due to the differences in conduction properties of semiconducting ZnO:Al and metallic ITO. OLEDs with ZnO:Al anodes showed nearly saturated efficiency under high current driving conditions compared with those of OLEDs with ITO anodes. This meant better charge balance in OLEDs with ZnO:Al anodes. These properties of OLEDs with ZnO:Al anodes are useful in making bright display devices with efficiency.

• 한국전기전자재료학회논문지
• /
• 제22권9호
• /
• pp.728-731
• /
• 2009

We report numerical simulations to investigate of the dependendce of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of $10\;{\mu}m$, but varying the channel width W from 5 nm to $5\;{\mu}m$, and thickness t from 10 nm to 30 nm. We have show that $Q_{ON}/Q_{OFF}$ drastically decreases (from $^{\sim}2.9{\times}10^4$ to $^{\sim}9.8{\times}10^3$) as the channel thickness increases (from 10 nm to 30 nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed then in the bottom of control channel.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.194-194
• /
• 2008

Boron doped ZnO:Al(AZOB) thin films were prepared on glass substrates by dc magnetron sputtering. Influence of the annealing treatment on the electrical and optical properties of AZOB thin films were investigated. The lowest resistivity of $1.6\times10^{-3}\Omega$-cm was obtained at an annealing temperature of $400^{\circ}C$. The average transmittance of the films is over 80% in the visible range. It was also shown that by introducing boron impurity into AZO system improve the uniformity, the resistivity, and thermal stability of ZnO-based conducting thin films.

• Journal of Electrical Engineering and Technology
• /
• 제8권2호
• /
• pp.295-303
• /
• 2013

This paper reports an investigation of pulse width modulation (PWM) techniques for two-phase brushless DC (BLDC) motors fed by a two-phase eight-switch inverter in a fan application. The three-phase BLDC motor is widely applied in industry; however, a lower-cost two-phase BLDC motor and drive circuit has been greatly in demand in recent years. In this paper, we introduce a mathematical model of the two-phase BLDC motor with sinusoidal back electromotive forces (EMFs) based on traditional three-phase BLDC motors. To simplify the drive algorithm and speed up its application, we analyze the principle of block commutation for a two-phase BLDC motor drive in the 180-electrical-degree conduction mode, and we further propose five PWM schemes to improve the commutation performance of the two-phase BLDC drive. The effectiveness of the proposed PWM methods is verified through experiments.

• Journal of Power Electronics
• /
• 제14권5호
• /
• pp.815-826
• /
• 2014

An improved bridgeless interleaved boost power factor correction (PFC) rectifier to improve power efficiency and component utilization is proposed in this study. With combined conventional bridgeless PFC circuit and interleaved technology, the proposed rectifier consists of two interleaved and magnetic inter-coupling boost bridgeless converter cells. Each cell operates alternatively in the critical conduction mode, which can achieve the soft-switching characteristics of the switches and increase power capacity. Auxiliary blocking diodes are employed to eliminate undesired circulating loops and reduce current-sensing noise, which are among the serious drawbacks of a dual-boost PFC rectifier. Magnetic component utilization is improved by symmetrically coupling two inductors on a unique core, which can achieve independence from each other based on the auxiliary diodes. Through the interleaved approach, each switch can operate in the whole line cycle. A simple control scheme is employed in the circuit by using a conventional interleaved controller. The operation principle and theoretical analysis of the converter are presented. A 600 W experimental prototype is built to verify the theoretical analysis and feasibility of the proposed rectifier. System efficiency reaches 97.3% with low total harmonic distortion at full load.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
• /
• pp.293-296
• /
• 1998

Surface electrical conduction in insulator is most important factor to assess the insulation performances of outdoor insulating materials. In this paper, contamination performance of the widely used materials for outdoor insulator - porcelain, EPDM, Silicone rubber - were discussed by measuring properties of average leakage current and scintillation discharge pulses under artificial contamination conditions. The artificial contaminations used were deionized distilled water fog, 0.5wt% NaCl salt fog of light pollution and 2wt% NaCl salt fog of medium pollution. The average leakage current was appeared linearly with applied voltage at dry and clean surface condition. The magnitude of leakage current was almost same at different kinds of samples. In case of deionized distilled water fog, the characteristics of leakage current and applied voltage was most different to that in case of dry and clean condition. In case of salt fog pollution condition, The leakage current was increased above critical voltage. The scintillation discharges were also activated at the level. the leakage current and scintillation discharges were increased with increasing pollution degree. The resistance to pollution properties of silicone rubber appeared excellent among them.

• 한국전기전자재료학회논문지
• /
• 제11권9호
• /
• pp.718-726
• /
• 1998

J-E 특성 AC 임피더스 분석 그리고 주파수- 전도 특성들을 실험하여 임펄스 전류 서지가 ZnO 바리스터의 열화(degradation)에 미치는 영향을 고찰하였다. ZnO 바리스터 시편에 임펄스 전류(300A/$cm^24, 8/50$\mu s$)를 인가시킨 결과, 입계(grain boundary) 특성을 나타내는 비선형계수 $\alpha$와 E\ulcorner\ulcorner의 값은 크게 감소하였으나, 입자 특성을 나타내는 E_{100A}, E_{300A}$ 값에서는 큰 변화가 없었다. 이러한 열화 현상은 입계의 위치한 부성 전하 밀도, $N_s$의 감소에 한 쇼트키 장벽의 변화에 기인한 것으로 나타났다. 임펄스 서지에 의해 열화된 ZnO 바리스터는 AC 임피더스 분석에서 현저한 non-Debye 특성을 보이며, 이는 병렬 RC 네트워크로 모델링한 Cole-Cole 완화 관계식으로 입계의 열화 특성을 잘 설명할 수 있었다. 주파수-전도도 관계를 검토한 결과 Zno 바리스터는 호핑 전도(hopping conduction),\$sigma(\omega)\varpropto\omega^{\eta}$ 특성을 나타내면, 임펄스 서지가 인가된 이후 n 값이 감소하였다. 이는 임펄스 서지에 의해 입RP 결합 상태(defect states)가 호핑 전도가 발생하기 쉽고 다중(multiple)호핑에 의한 전도 메커니즘을 갖는 것으로 고찰되었다.

• 한국전기전자재료학회논문지
• /
• 제15권9호
• /
• pp.750-757
• /
• 2002

A new lateral trench LTEIGBT with p+ diverter was proposed to suppress latch-up of LTIGBT The p+ diverter was placed between the anode and cathode electrode. The latch-up of LTEICBT with a p+ diverter was effectively suppressed to sustain an anode voltage of 8.7V and a current density of 1453A/$\textrm{cm}^2$ while in the conventional LTIGBT, latch-up occured at an anode current density of 540A/$\textrm{cm}^2$. In addition, the forward blocking voltage of the proposed LTEIGBT with a p+ diverter was about 140V. The forward blocking voltage of the conventional LTIGBT of the same size was no more than 105V, We fabricated the proposed LTEIGBT with a p+ diverter after the device and process simulation was finished. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT with a p+ diverter and the conventional LIGBT are 90㎃ and 70㎃, respectively, at the same breakdown voltage of 150V.

• 한국전기전자재료학회논문지
• /
• 제15권9호
• /
• pp.758-763
• /
• 2002

A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19w. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGBT and LTIGBT. The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and TIGBT are 60V and 100V, respectively. Because the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.565-569
• /
• 1999

In these days, the silicone insulators have been increasingly studied and applied for outdoor insulators because it has superior characteristics than porcelain and glass insulators, which have been used for outdoor insulators. First of all, The excellent performance of the silicone rubber in polluted and wet conditions is attributed to the ability of the material to maintain the hydrophobicity of the surface in the presence of severe contamination and wet conditions. This is because of the presence of low molecular weight mobile fluid in the silicone rubber which diffuses to the surface and to above the contamination layer. But, the leakage current and some surface discharge occurs on surface of the composite polymeric insulation materials when the insulator is used for a long time with severe contaminative condition and it can lead the contamination flashover. So the leakage current and the discharge current are important to estimate the condition of the silicone rubber surface. In this paper, the average leakage current, the relation of surface discharge current and phase angle were study to investigate electrical conduction of silicone rubber surface with the salt fog condition.