• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.471-476
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• 2003

Au/oxide/n-InP Schottky diodes were fabricated from heteroepitaxial InP layers grown on GaAs substrates by the metalorganic vapor phase epitaxy (MOVPE) method from a new combination of source materials: ethyldimethylindium (EDMIn) and tertiarybutylphosphine (TBP). Anodic oxidation technique by using a solution of 10 g of ammonium pentaborate in 100 cc of ethylene glycole as the electrolyte was used to deposit a thin oxide layer. The barrier heights determined from three different techniques, current-voltage (I-V) measurements at room temperature and in the temperature range of 273 K - 373 K, and room temperature capacitance-voltage (C-V) measurements are in good agreement, 0.7 - 0.9 eV which is considerably high as compared to the 0.45 - 0.55 eV in Au/n-InP Schottky diode without a Passivation layer. The ideality factors of 1.1 - 1.3 of the Schottky diodes were also determined from the I-Y characteristics. Deep level transient spectroscopy (DLTS) studies revealed only one shallow electron state at 92.6 meV below the bottom of the conduction band and no deep state in the heteroepitaxial InP layers grown from EDMIn and TBP.

• Transactions on Electrical and Electronic Materials
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• v.6 no.6
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• pp.294-300
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• 2005

According to the trend for electric power equipment of high capacity and reduction of its size, the needs for the new high performance electric equipments become more and more important. On of the possible solution is high temperature superconducting (HTS) power application. Following the successful development of practical HTS wires, there have been renewed activities in developing superconducting power equipment. HTS equipments have to be operated in a coolant such as liquid nitrogen ($LN_2$) or cooled by conduction-cooling method such as using Gifford-McMahon (G-M) cryocooler to maintain the temperature below critical level. In this paper, the dielectric strength of some insulating materials, such as unfilled epoxy, filled epoxy, and polyimide in $LN_2$ was analyzed. Epoxy is a good insulating material but fragile at cryogenic temperature. The filled epoxy composite not only compensates for this fragile property but enhances its dielectric strength.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.10-15
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• 2002

Surface states of polydimethylsiloxane (PDMS) treated by plasma were investigated by the analysis by x-ray photoelectron spectroscopy (XPS) and surface voltage decay. Plasma treatment causes the silica-like(SiO$\_$x/, x=3∼4) oxidative layer, which is confirmed with XPS, and lowers surface resistivity from 1.78$\times$1014 Ω/square to 1.09$\times$10$\^$13/ Ω/square with increasing the plasma treatment time. By measuring the decay time constant of surface voltage, the calculated surface resistivity was compared with the value directly measured by a voltage-current method, so good agreement between two methods was obtained. It was observed that the plasma treatment led to decrease of the thermal activation energy of the surface conduction from 31.0 kJ/mol of untreated specimen to 21.8 kJ/mol. It is found that our results allow the examination of effects of plasma on electrical properties of PDMS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.306-311
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• 2000

The purpose of this study is to research and develop solid polymer electrolyte(SPE) for Li polymer battery. The temperature dependence of conductivity impedance spectroscopy and electrochemical properties of PDF/PAN electrolytes as a function of a mixed ratio were reported for PVDF/PAN based polymer electrolyte films which were prepared by thermal gellification method of preweighed PVDF/PAN plasticizer and Li salt. The conductivity of PVDF/PAN electrolytes was 10$\^$-3/S/cm. 20PVDF5PEN LiCiO$\_$4//PC$\_$10//EC$\_$10/ electrolyte has the better conductivity compared to others. 20PVDF5PANLICIO$\_$4//PC$\_$10//EC$\_$10/ electroylte remains stable up to 5V vs. Li/Li$\^$+/. Steady state current method and ac impedance were used for the determination of transference numbers in PVDF/PAN electrolyte film. The transference number of 20PVDF5PANLiCO$\^$4//PC$\_$10//EC$\_$10/ electrolyte is 0.48.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.326-331
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• 2000

We have fabricated the field emitter arrays coated with diamond-like carbon (DLC) films that improved the field emission characteristics. The nitrogen doped DLC films are prepared by the filtered cathodic vacuum are (FCVA) tehnique. The activation energy of the nitrogen doped DLC films are derived from electrical conductivity measurements. The silicon field emission arrays (FEAs) were prepared by the VLSI technique. The turn-on field was rapidly decreasing and the emission current was remarkably increasing the DLC-coated FEAs than the non-coated silicon FEAs. In the nitrogen doped FEAs, the turn-on field decreased and the emission current increased with increasing the nitrogen found out the field emission current and the work function of the DLC-coated FEAs was remarkably decreased than that of the non-coated silicon FEAs. As nitrogen doping concentrations are increased the work function of FEAs is decreased and the field emission properties are improved in nitrogen doped DLC-coated FEAs. This phenomenon in due the fact that the Fermi energy level moves to the conduction band by increasing nitrogen doping concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1041-1046
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• 2003

In order to improve the surface uniformity and the conduction properties of the fabricated YBCO thick films, a system that applies alternating field vertically to the EPD field has been developed for the first time and applied to the electrophoretic deposition process. The applied alternating electric field, so called Shaky Alternating Assisted Field, caused a force to be exerted on each YBCO particle and resulted in a shaking of the particle in the direction of applied electric field, accomplishing a uniform particle orientation. The usual commercial electrical power was used for the vertically applied alternating voltage and the induced electric field was 25-120 V/cm at 60Hz. The thick film fabricated by the method developed in this paper showed better surface uniformity without crack and porosity and improved film characteristics such as critical temperature (Tc,zero = 90 K) and critical current density (2354 A/$\textrm{cm}^2$), Therefore, it is expected that the shaky-aligned electrophoretic deposition method can be used to fabricate superconductor films through a simpler process and at less expense.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.224-227
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• 2002

In this paper, we have investigated the physical properties and electrical conduction properties of polyethylene terephthalate film due to temperature variation, and the measurement of volume resistivity used to highmegohm meter is measured from 1 to 10 minutes when the specimen applied the voltage accroding to the step voltage appling method. From FT-IR spectrum as an analysis of physical properties, the strong absorption in wavenumbers $1019[cm^{-1}]$, $1266[cm^{-1}]$ and $1752[cm^{-1}]$ observed by the C=O and benzene ring. From the analysis of DSC, the crystalline melting points of the specimen observed in the temperature $80[^{\circ}C]$ and $263[^{\circ}C]$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.236-239
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• 2002

Surface states of silicone polymer treated by plasma were investigated by the analysis by x-ray photoelectron spectroscopy (XPS) and surface voltage decay. Plasma treatment causes the silica-like oxidative layer, which is confirmed with XPS, and lowers surface resistivity with increasing the plasma treatment time. Using the decay time constant of surface voltage, the calculated surface resistivity was compared with the value directly measured by a voltage-current method. A good agreement between two methods was obtained. In addition, we estimated the thermal activation energy for surface conduction, Based on our results, we could understand the relationship between surface chemical states and surface electrical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.534-537
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• 2002

We have studied conduction mechanism that is interpreted in terms of space charge limited current (SCLC) region and tunneling region. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris (8- hydroxyquinolinoline) aluminum(III) $(Alq_3)$ as an electron injection and transport and emitting later, copper phthalocyanine (CuPc) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and poly(vinylcarbazole) (PVK) as a buffer layer respectively. Al was used as cathode. We manufactured reference structure that has in ITO/TPD/$Alq_3$/Al. Buffer layer effects were compared to reference structure. And we have analyzed out luminance efficiency-voltage characteristics in ITO/Buffer layer/TPD/$Alq_3$/Al with buffer-layer materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.969-974
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• 2003

HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.