• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.192-192
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• 2010

DAPAS (Development of Advanced Power system by Applied Superconductivity technologies) program that the, superconductivity national program has been started one of the 21C frontier programs from 2001 in Korea. The 3rd phase of DAPAS program was started at April 2007, and the ultimate goal of HTS cable project is to develop 154kV, 1GVA class HTS cable. The structure of 154kV, 1GVA HTS cable is single core with cold dielectric insulation. The cable core consists of the former, conduction layer, electrical insulation layer, shielding layer. The cable cryostat consists of two corrugated seamless aluminum tubes as its high sealing reliability, the tubes separated through a spacer arrangement. Outdoor termination was developed by LS cable and cryogenic system by CVE for 154kV, 1GVA class HTS cable. The 154kV, 1GVA HTS cable will be installed and be tested in KEPCO Gochang Testing Center from June 2010.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.145-145
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• 2010

It is observed from SEM images that many voids were created after annealed by helium gas. The PL spectra of the ZnO samples revealed the strong violet emission peaks at 3.05 eV with the relative weak near band edge UV emissions. It was concluded from experiment results that native $Zn_i$ and $V_o$ donor defect levels can be generated below the conduction band edge due to the incorporation of helium atoms decomposed from helium gas into the ZnO matrix. He atoms in ZnO matrix will affect the interface trap existing in depletion regions located at the grain boundaries, which leads to the creation of $Zn_i$ and $V_o$ donor defect levels.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.303-310
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• 2010

We fabricated $La_{0.6}Sr_{0.4}MnO_3$ thin films using radio frequency (RF) magnetron sputtering. They were grown on sapphire substrates with various deposition conditions. After the growth of the $La_{0.6}Sr_{0.4}MnO_3$ thin films, they were annealed at various temperatures to be crystallized. We successfully fabricated single phase $La_{0.6}Sr_{0.4}MnO_3$ thin films with high electrical conductivity. The room temperature resistivity was $1.5{\times}10^{-2}{\Omega}{\cdot}cm$. It can be considered that $La_{0.6}Sr_{0.4}MnO_3$ thin films are one of the feasible candidates for electrodes for integrated device applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.132-132
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• 2008

Boron doped ZnO:Ga(GZOB) thin films were prepared on glass substrates by DC magnetron sputtering. Influence of the annealing treatment on the electrical and optical properties of GZOB thin films were investigated. The west resistivity of $9.6\times10^{-4}\Omega$-cm was obtained at an annealing temperature of $400^{\circ}C$. The average transmittance of the films is over 80% in the visible range. It was also shown that by introducing boron impurity into GZO system improve the uniformity, the resistivity, and thermal stability of ZnO-based conducting thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.139-140
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• 2008

In this study, the photocurrent (PC) spectroscopy of undoped p-type CIS layers has been investigated at temperatures ranging from 10 to 293 K. Three peaks, A, B, and C, corresponded to the intrinsic transition from the valence band states off $\Gamma_7$(A), $\Gamma_6$(B), and $\Gamma_7$(C) to the conduction band state $\Gamma_6$, respectively. The crystal field splitting and the spin orbit splitting were found at 0.0059 and 0.2301 eV, respectively, and the temperature dependence of the optical band gap could be expressed by using the empirical equation $E_g$(T) = $E_g$(0) - $(8.57\times10^{-4)T^2$/(T + 129). But the behavior of the PC was different from that generally observed in other semiconductors: the PC intensities decreased with decreasing temperature. From the relation of log $J_{ph}$ vs 1/T, where $J_{ph}$ is the PC density, the dominant level was observed at the higher temperatures. We suggest that in undoped p-type CIS layers, the trapping center limits the PC signal due to native defects and impurities with decreasing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.121-121
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• 2008

We propose a novel nanomaterial-based pn diode which constructed with an n-type ZnO nanowire (NW) and a p-type HgTe nanoparticle (NP) thin film. The photo current characteristics of a ZnO NW, a HgTe NP thin film and pn diode constructed with a ZnO NW and a HgTe NP thin film were investigated under illumination of the 325 nm and 633 nm wavelength light. The conductivities of a ZnO NW exposed to the 325 nm and 633 nm wavelength light increased, while the photocurrents taken from the HgTe NP thin film was very close to the dark currents. Moreover, The pn diode exhibited the rectifying characteristics of the dark current and of the photocurrent excited by the 633 nm wavelength light. In contrast, the ohmic characteristics for the photocurrent were observed due to the junction barrier lowering in the conduction band of the ZnO nanowire under the illumination of the 325 nm wavelength light.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.262-263
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• 2008

The Metal-Insulator-Silicon (MIS) capacitors with $SiO_2$ and high-k dielectric were investigated. The high-k dielectrics were obtained by atomic layer deposit (ALD) system. The electrical characteristics were investigated by measuring the current-voltage (I-V) characteristics. The conduction mechanisms were analyzed by using the Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot. As a result, the MIS capacitors with high-k dielectrics have lower leakage current densities than conventional tunnel-barrier with $SiO_2$ dielectrics.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.4
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• pp.601-610
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• 2016

The light-emitting diode (LED) has been used in a variety of industrial fields and for general 0lighting purposes on account of its high efficiency, low power consumption and long lifespan. The LED is driven by direct current; therefore, an AC/DC converter is typically required for its use. An electrolytic capacitor is generally used for stabilizing DC voltage during use of the AC/DC converter. However, this capacitor has a short lifespan, which makes it a limiting factor in LED lighting. Furthermore, LED lighting requires a dimmable control to enable energy savings and fulfil a growing consumer demand. In this paper, the dimmable single-stage power factor correction (PFC) continuous conduction mode (CCM) flyback converter that employs no electrolytic capacitor is presented. The LC resonant filter is alternatively applied to reduce the 120[Hz] ripple on the output. And the optimum value of the LC resonant filter parameters considering both efficient and performance is analysed. Simulation and experimental results verify the satisfactory operation of the converter.

• Journal of the Korean Ceramic Society
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• v.25 no.3
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• pp.243-250
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• 1988

The cross effect between an ion flux and an electronic current in a nonstoichiometric binary oxide, $A_{1-\delta}O_\mu$, has been analyzed in the light of irreversible thermodynamics. It has been shown that a net flux of the mobile cation vacancy is induced through the system in an electrical potential gradient applied across a pair of the reversible electrodes, which makes the Fick frame shift relative to the laboratory frame. As a consequence, the relative shift is a measure of the effective charge responsible for the cross effect. Two experiments are proposed to measure the shift.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.42-49
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• 2007

This paper introduces a study on reliability-driven device placement using simulated annealing algorithm which can be applicable to MCM or electronic systems embedded in a spacecraft running at thermal conduction environment. Reliability of the unit's has been predicted with the devices' junction temperatures calculated from FDM solver and optimized by simulated annealing algorithm. Simulated annealing in this paper adopts swapping devices method as a perturbation. This paper describes and compares the optimization simulation results with respect to two objective functions: minimization of failure rate and minimization of average junction temperature. Annealing temperature variation simulation case and equilibrium coefficient variation simulation case are also presented at the two respective objective functions. This paper proposes a new approach for reliability optimization of MCM and electronic systems considering those simulation results.